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Part # Distributor Manufacturer Product Category Description
228433-8 Allied Electronics, Inc. AMP/TYCO ELECTRONICS Not Provided Accessory; Hand Polishing Film; 60-80; 8.5 in. x 11 in.; Aluminum Oxide

Conduct Research Top

  • Aluminum Oxide
    are also produced with chemical precursors and precipitation, calcination and/or sintering processes. Calcined or platelet aluminas are used in fine grit or polishing applications. Sol-gel aluminum oxide is produced in using chemical ceramic technology, but this abrasive has very high performance
  • Aluminum lock rod used for tractor trailers
    The customer needed these lock rods to. be bright and shiny, in order to match chrome on tractor. trailers. The customer was mechanically polishing the. aluminum rods to remove weld discoloration and provide. a bright surface. This process was dirty and time consuming, causing employees
  • Machined part needing fully clean surfaces in complex recesses
    The end customer designed the 'Extruding. Head' as a casting. The casting became extremely difficult. to polish in the slotted areas. They tried mechanical. polishing, buffing, aluminum oxide blasting and honing. All these methods proved expensive and time consuming. Though the casting
  • Chipmakers move to Second-Generation Copper
    for polishing in the CMP step. Copper has become the material of choice for fabricating connections on ultralarge scale integrated circuits. The advantages of this technology are well chronicled. Copper has greater conductivity than aluminum interconnects it replaces, thus it engenders less I R loss
  • MICRO: Building Copperopolis II by Israel Ybarra Jr. (Jan 2000)
    the reliability and potential cost-effectiveness of implementing S CE technology and confirm the feasibility of using existing (noncopper) process equipment in conjunction with copper applications. The transition from aluminum to copper contacts and from oxide to low-k dielectric interconnect materials has
  • MICRO: Brave New Materials
    argon and nitrogen to remove particle defects from the wafer surface during aluminum metallization and interconnect processing. The cryokinetic cleaning technology is a completely dry, gas-phase, nonreactive process that does not damage sensitive films and has a minimal environmental impact. In contrast
  • MICRO: Surface Conditioning - Hakanson (March 2000)
    manufacturing, CMP is employed to reduce topography and planarize patterned layers, alumina (Al ) films, and films with various concentrations of nickel and iron. In semiconductor manufacturing, CMP is used to reduce topography and to polish tungsten, aluminum, copper, and silicon oxide layers. Apart from
  • MICRO:Building Copperopolis, by Hugh Li, p.35 (March '99)
    the semiconductor manufacturing and equipment industries. Copper is significantly less resistant than alumi-num, the most widely used interconnect material, and this attribute reduces the resistance-capacitance delay that becomes significant at 0.18- um and smaller linewidths. However, if copper

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