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Amplifier Substrate
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RF and microwave laminates are used as substrates for radio frequency (RF) and microwave communication systems and electronics. They are designed to meet the demanding performance standards for higher-frequency applications.
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Supplier: TriQuint Semiconductor, Inc.Description: The TriQuint TGA2572 is a Ku-band power amplifier fabricated on TriQuint’s production-released, 0.25µm GaN on SiC process. Operating from 14 to 16 GHz, the TGA2572 typically provides 43dBm of saturated output power, 30% power-added efficiency and 24dB of small signal gain. Ideally
- Device Type: Power Operational Amplifiers
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Supplier: Teledyne Cougar, Inc.Description: The 519 Series is a wideband, high-power RF amplifier for lower cost applications. Using output choke coupling and transistors on a thin-film substrate, this amplifier provides reliable and stable operation over wide temperature range. The 519 Series amplifiers are available in three packages
- Amplifier Type: Power Amplifier
- Applications: Military / Defense
- Package Type: Surface Mount Technology (SMT), Through Hole Technology (THT)
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Supplier: M.S. Kennedy Corp.Description: an analog signal for the motor speed/direction, or audio signal for switchmode audio amplification. The MSK 4223 is constructed on a space efficient ceramic substrate that can be directly connected to a heatsink.
- Device Type: PWM Amplifiers
- Package Type: SIP
- Operating Range: Industrial
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Supplier: M.S. Kennedy Corp.Description: an analog signal for the motor speed/direction, or audio signal for switchmode audio amplification. The MSK 4223 is constructed on a space efficient ceramic substrate that can be directly connected to a heatsink.
- Driver Type: High-side Gate Driver
- Number of Output Channels: 4
- Output Configuration: Noninverting
- IC Package Type: SIP
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Supplier: Panasonic Electric WorksDescription: The SU-7/SH series of photoelectric sensors is a slim, compact separate amplifier detection solution for a wide range of applications. The 10mm thick slim amplifier offers simple, easy to use automatic threshold setting. Nine advanced functions are also available such as limit sensitivity setting
- Technology: Through Beam, Diffuse, Convergent
- Fiber Optic: Plastic
- Beam: Visible, Infrared
- Mode: Light/Dark Programmable
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Supplier: Skyworks Solutions, Inc.Description: The PS088-315 is a voltage controlled phase shifter designed for use in power amplifier distortion compensation circuits in AMPS band base station applications. Its characteristics are specified in a 25 MHz bandwidth centered at 881.5 MHz. The PS088-315 employs a monolithic quadrature hybrid
- Phase Shift Range: Other
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Supplier: Measurement Specialties, Inc.Description: utilizes silicon oil to transfer pressure from the 316L stainless steel diaphragm to the sensing element. A ceramic substrate is attached to the package that contains laser-trimmed resistors for temperature compensation and offset correction. An additional laser trimmed resistor is included which
- Device Category: Sensor
- Pressure Reading: Absolute, Gauge
- Sensor Technology: Semiconductor Piezoresistive
- Media: Liquid, Gas
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Description: Status: ACTIVE As a member of the SWIFT family of dc/dc regulators, the TPS5420 is a high-output-current PWM converter that integrates a low-resistance high-side N-channel MOSFET. Included on the substrate with the listed features is a high-performance voltage error amplifier that provides tight
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Supplier: Skyworks Solutions, Inc.Description: Skyworks SKY77601 is a hybrid multimode, multiband Power Amplifier Module (PAM). The device is intended to support 2.5G and 3G handsets and operates efficiently in GSM, EGPRS, EDGE WCDMA modes. For 2.5G, the SKY77601 supports the GSM850, EGSM900, DCS1800, and PCS1900 bands. The device also
- Amplifier Type: Power Amplifier
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Supplier: Anaren, Inc.Description: The X3DC21E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC21E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance as well as low insertion
Featured Products for Amplifier Substrate Top
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The uniform dispersion of ceramic throughout the laminate yields extremely low x and y coefficients of thermal expansion. The low modulus and low x - y CTE values make RF-35A2 an attractive material for the surface mounting of chip carriers. Other benefits of RF-35A2 include temperature stable Dk and Df, excellent peel strength, low moisture absortpion, low loss properties and ease of drilling. This material is used in power amplifiers, filters/couplers, passive components, wireless antennas,... (read more)Browse Printed Circuit Substrate Materials (PCB / PWB) Datasheets for Taconic -
. Isotropic Properties. Typical Applications. High Power Amplifier. NRM/MRI Coils. Couplers... (read more)Browse RF and Microwave Laminates Datasheets for Polyflon Company - a Crane Co. Company
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TLY laminates are manufactured from very lightweight woven fiberglass, making them much more dimensionally stable than non-reinforced PTFE composites. The woven matrix yields a more mechanically stable laminate that is suitable for high volume manufacturing and the low dissipation factor enables successful deployment for automotive radar applications designed at 77 GHz as well as other antennas in millimeter wave frequencies. Comparative OEM testing at 77 GHz of lightly reinforced TLY-5 vs. it... (read more)Browse Printed Circuit Substrate Materials (PCB / PWB) Datasheets for Taconic
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average output power. The transmitter operates at a nominal wavelength of 1310 nm. Access to RF input, electrical control signals I/Os and amplifier supply is through a flexible printed circuit board. The RF input is self biased and AC coupled, and thus does not require an external DC block. A suitable bracket is used to mount the transmitter onto a PCB or metal substrate. The high output power and conversion gain allow for a high splitting ratio in branched Passive Optical Networks. CLICK HERE... (read more)Browse Fiber Optic Transmitters Datasheets for Avago Technologies
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in a Master Oscillator Power Amplifier, MOPA, configuration with additional amplifiers to achieve the right power at the right wavelength for your application. (read more)Browse Lasers Datasheets for LightMachinery Inc.
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sensors (G9201 to G9204 series, G9494 series). An InGaAs photodiode array, the G8909-01 features 40-channel parallel readout and low cross-talk. It has an active area of 0.08 mm in diameter. The image sensors consist of an InGaAs photodiode array with each pixel connected to a charge amplifier array comprised of CMOS transistors, a CDS circuit, an offset compensation circuit, a shift register, and a timing generator. These image sensors offer one video line (256 channels) or two video lines (512... (read more)Browse Diode Lasers Datasheets for Hamamatsu Corporation USA
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The uniform dispersion of ceramic throughout the laminate yields extremely low x and y coefficients of thermal expansion. The low modulus and low x - y CTE values make RF-35A2 an attractive material for the surface mounting of chip carriers. Other benefits of RF-35A2 include temperature stable Dk and Df, excellent peel strength, low moisture absortpion, low loss properties and ease of drilling. This material is used in power amplifiers, filters/couplers, passive components, wireless antennas,... (read more)Browse Printed Circuit Substrate Materials (PCB / PWB) Datasheets for Taconic
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. Isotropic Properties. Typical Applications. High Power Amplifier. NRM/MRI Coils. Couplers... (read more)Browse RF and Microwave Laminates Datasheets for Polyflon Company - a Crane Co. Company
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Pneumatic signals of several inches water gauge applied to the input will control an output pressure of up to 35 PSI in both digital and analog systems. They can be used at fluidic signal levels for providing isolation and in timing circuits. Five models are available, providing a variety of actuating pressures for the valve. Maximum supply pressure is 25 to 35 PSI depending on the size of the supply orifice. (read more)Browse Datasheets for Air Logic
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The small form factor of 3.9 cubic inches brings state-of-the-art miniature power amplifier technology to the war fighter, meeting present challenges in size and weight reduction. The NW-SSPA-15W-0.225-2.4 is ideal for broadband RF telemetry and military communication systems that require high reliability and high efficiency in a compact housing. Contact NuWaves Ltd. (read more)Browse RF Amplifiers Datasheets for NuWaves Ltd.
Conduct Research Top
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DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process (.pdf)
results for DC to 85GHz traveling wave amplifier (TWA) and 29-30.5GHz 4.9W power amplifier (PA) are also described as process capability verification. TWA shows 8dB of small-signal gain and 12dBm of output power up to 85GHz frequency. PA shows 20dB of small-signal gain and 36.9dBm of output power at 3dB
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TA022: Benefits and Challenges in Decreasing GaAs through Substrate via Size and Die Thickness
via sizes for 30-75 µm thick wafers were developed over the past several years using reactive ion etch (RIE) tools.1-10 This enabled through substrate ground vias to be located closer to the heat generating, active regions of power amplifier (PA) devices. Pamela Sullivan. Benefits and Challenges
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Cooling Power Op Amps
to a similar amplifier cooled with a passive heat sink. Utilizing a small DC fan to force air into the heat sink the PAD117 provides a. 0.5OC/Watt thermal resistance for the amplifier's substrate with a volume of. only 4.6 in3 and a weight of 4 oz. Aavid/Thermolloy has a passive heat sink. extrusion
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MICRO: Product Technology News (October 2000)
in an automated system. They can accommodate 8-in. wafers and 6-in.-diam masks. A single objective can be used with bright-field, dark-field, and differential interference contrast observation techniques. A digital fiber-optic amplifier comes in a remote control version that includes special
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Cascading Application Information
the substrate to header thermal resistance for all amplifiers using physical. math models. Thermal resistance (jc) is expressed as Trise divided by Total Power. Trise equals the DC power on the die multiplied by the amplifier's total thermal
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Oscillator Circuits For RTD Temperature Sensors
This application note shows how to design a temperature sensor oscillator circuit using Microchip's low-cost MCP6001 operational amplifier (op amp) and the MCP6541 comparator. Oscillator circuits can be used to provide an accurate temperature measurement with a Resistive Temperature Detector (RTD
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Ultra Low-Noise High-Speed CMOS Linescan Sensor for Scientific and Industrial Applications
This paper describes a 2048x1 linear image sensor implemented in a 0.35mm 4M1P CMOS process that uses a low fixed pattern noise capacitive transimpedance amplifier (LFPN CTIA) pixel architecture. The pixel also includes circuitry for reducing 1/f noise, correlated double sampling, electronic
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Power Design Considerations For LED Applications
DACOUT, load the serial input register of the DAC with the code in Figure 1. In order to have 4mA through the current loop for 0V DACOUT, we use an offset voltage reference of 2.5V. In Figure 2, A1 is connected as a voltage follower amplifier which drives a very high impedance MOSFET Q2 and its
Engineering Web Search: Amplifier Substrate Top
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Application Note 127 LM143 Monolithic High Voltage Operational...
Other amplifier featuring ?40V maximum supply voltage operation, NPNs in the circuit are representative of those found in stan- output swing to ?37V,
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RF-35A2 Ultra Low Loss Power Amplifier Substrate from Taconic
Home > Company Directory > Taconic > RF-35A2 Ultra Low Loss Power Amplifier Substrate Taconic - RF-35A2 Ultra Low Loss Power Amplifier Substrate
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Transistor - Wikipedia, the free encyclopedia
3.2 Transistor as an amplifier 4 Comparison with vacuum tubes
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Field-effect transistor - Wikipedia, the free encyclopedia
The DEPFET is a FET formed in a fully depleted substrate and acts as a sensor, amplifier and memory node at the same time.
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Vishay - New Vishay Siliconix Monolithic Dual JFETs Eliminate...
New Vishay Siliconix Monolithic Dual JFETs Eliminate Latch-Up In Amplifier Designs
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APPLICATION NOTE
of Transfer Charge n- n- n- Gate V2 Transfer n p Well (GND) 7.4 m n Substrate True Two Phase Burried Channel VCCD Lightshield over VCCD not shown
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Fujitsu Laboratories Develops C- to X- Ultra-Wideband...
power amplifier based on gallium nitride (GaN)(1) high electron mobility transistors (HEMT)(2), which as a hybrid amplifier - an amplifier in which
