Products/Services for APD InGaAs Detector System
Photosensor Modules - (68 companies)
Photodiodes - (223 companies)
Fiber Optic Receivers - (127 companies)
RF Phase Detectors and Comparators - (36 companies)
Phototransistors - (89 companies)
Photoelectric Sensors - (426 companies)...or presence based on transmittance or blockage (respectively) of the beam. They have the largest sensing range but can be complex to install. Retro-reflective sensors incorporate the emitter and detector in one body with parallel beams; a reflector opposite... Search by Specification | Learn More
Product News for APD InGaAs Detector System
Excelitas Technologies Corp.
LLAM Series Si/InGaAs Low-Light Analog APD Modules The LLAM series modules are specifically designed for the detection of high-speed, low-light analog signals. The Si APDs used in these devices are the same as used in Excelitas ’ C30902EH and C30954EH products, while the InGaAs APDs are used in the C30645EH and C30662EH products. These detectors provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The preamplifier section of the module uses a very low noise GaAs FET front... (read more)Browse Photodiodes Datasheets for Excelitas Technologies Corp.
Raman spectrometers that utilize InGaAs detectors 1064nm NIR Raman Spectrometers. StellarNet has released a series of portable Raman spectrometers that utilize InGaAs detectors to capture NIR spectra induced by 1064nm lasers. Sample fluorescence is avoided while the SpectraWiz software enables quick identification of liquids, powders, or solids. Fluorescence interference is problematic with 830nm, 785nm and lower frequency lasers especially with organic materials. Silicon CCD detectors get saturated and bloom preventing Raman spectra from... (read more)Browse Raman Spectrometers Datasheets for StellarNet, Inc.
First Sensor AG
Matrix APD detector arrays for LIDAR A new series of monolithic 2D-matrix arrays complements a series of linear APD arrays. The matrix array product line includes 5 x 5 (25 APD-pixel) and 8 x 8 (64 APD-pixel) geometries while the linear arrays are available with up to 16 elements. Optimized for 650-800nm (First Sensor series -8), 900nm (First Sensor series -9) or 1064nm (First Sensor series -10) specific versions for most common laser sources are available. The available packages developed at First Sensor AG for the arrays include... (read more)Browse Photodiodes Datasheets for First Sensor AG
High Speed InGaAs Photodetector FCI-H155/622M-InGaAs-70 series, from OSI Optoelectronics, are high-speed 70 µm InGaAs photodetector integrated with wide dynamic range transimpedance amplifier. Combining the detector with the TIA in a hermetically sealed 4 pin TO-46 package provides ideal conditions for high-speed signal detection and amplification. Low capacitance, low dark current and high responsivity of the detector, along with low noise characteristics of the integrated TIA, give rise to excellent sensitivity... (read more)Browse Photodiodes Datasheets for OSI Optoelectronics
InP/InGaAs Epitaxial Wafers for PD and PD Arrays One of the many technologies that Marktech has recently introduced are customized 1.7 µm InP/InGaAs Epitaxial Wafers for use in PIN Photodiodes, APD and PD arrays. Based on the application needs, these high speed, high sensitivity wafers can be offered in a number of array and aperature sizes. Custom PD Array Capability Ranges: Cell Active Area: 40 µm x 40 µm. Pitch: 50 µm. 1D array: 2 x 64 (390 µm x 3531 µm); 2 x 128 (390 µm x 6960 µm... (read more)Browse Photodiodes Datasheets for Marktech Optoelectronics
High Speed InGaAs PIN Diode 1.7µm InGaAs PIN photo diodes are near infrared detectors that feature low noise, high sensitivity and high-speed response. Marktech introduces the newest series of these PIN diodes packaged in a TO-46 metal can with active areas from .03mm to 1.5mm with 3.0mm to be released soon. Applications include Optical Communication Devices such as receivers, sensors and high speed fiber modules. Standard spectral range of the PiN diode series is 0.9um to 1.7um. These parts offer considerable speed... (read more)Browse Photodiodes Datasheets for Marktech Optoelectronics
First Sensor AG
New Amplifier Hybrids with APD for 600-800 nm First Sensor develops and manufactures Hybrids as high speed optical data receivers for a long time and has gained many years of experience and know-how. Our hybrids incorporate an internal transimpendance amplifier with a PIN or an avalanche photodiode. The amplifier is always adapted to the specific strength of the detector. Today First Sensor presents two new Hybrids including an APD for 600-800 nm and a transimpedance amplifier (TIA) in an extremely small TO package: Both new hybrids... (read more)Browse Photodiodes Datasheets for First Sensor AG
First Sensor AG
Avalanche photodiodes (APD) First Sensor develops and manufactures avalanche photodiodes in series covering a range of technologies. Materials and processing can be adapted to individual customer and product requirements, thus enabling the optimization of parameters such as sensitivity at different wavelengths, speed and capacity. Quick Links: Information about APD photodiodes. Avalanche photodiodes are diodes with an internal gain mechanism. As in the case of standard diodes, photons generate electron-hole pairs, which... (read more)Browse Photodiodes Datasheets for First Sensor AG
Excelitas Technologies Corp.
High-speed, low-light analog APD Receiver Modules temperature range. Excelitas Technologies' LLAM series modules are specifically designed for the detection of high-speed, low-light analog signals. The LLAM series use the Silicon C30954EH APD and InGaAs C30645EH and C30662EH APDs, with optimal spectral responses between 830 and 1550 nanometers and very fast rise and fall times at all wavelengths. The LLAM series offers ultra low noise equivalent power (NEP) of < 10-14 W/Hz-1/2, 0.5 mm APD, @15 MHz bandwidth. Excelitas Technologies' new LLAM series... (read more)Browse Photodiodes Datasheets for Excelitas Technologies Corp.
InP / InGaAs Epitaxial Wafers 1.7µm, 2.2µm, 2.6µm Marktech Optoelectronics offers the highest purity InP/InGaAs Epiwafers in the industry today. Sophisticated manufacturing processes have been put in place to customize and produce high quality Inp/InGaAs Epitaxial wafers on 2, 3 and 4 inch platforms with wavelengths up to 2.6 µm, ideally suited for high speed long wavelength imaging, high speed HBT and HEMTs, APDs and analog-digital converter circuits. Applications using InP-based components can greatly exceed transmission... (read more)Browse Photodiodes Datasheets for Marktech Optoelectronics
Parts by Number for APD InGaAs Detector System
|Part #||Distributor||Manufacturer||Product Category||Description|
|C30927EH||Excelitas Technologies Corp.||Photodiodes||An Avalanche Photodiode (APD) provides higher sensitivity than a standard photodiode. It is ideal for extreme low-level light (LLL) detection and photon counting. Offered in Silicon or InGaAs materials, these devices provide detectivity from 400 nm - 1100 nm. Multiple configurations are available...|
Engineering Web Search: APD InGaAs Detector System
photonicsonline.com | The Stanford Photonics Research Center
Xenics? Xlin 1.7 3000 is an InGaAs SWIR line-scan detector that offers 3000 pixel resolution, currently the best resolution in the detector market.
See Stanford Photonics Research Center Information
July 1, 2005 / Vol. 30, No. 13 / OPTICS LETTERS 1725 Highly...
We present a single-photon detection system, operating at communication wave- lengths, based on guided-wave frequency upconversion in a nonlinear
See Stanford University Information
Thee-dimensional eyesafe laser RADAR sytem based on InGaAs/InP...
Thee-dimensional eyesafe laser RADAR sytem based on InGaAs/InP 4×4 APD array
A 1550-nm time-of-flight laser ranging system based on 1GHz...
A 1550-nm time-of-flight laser ranging system based on 1GHz sine-wave gated InGaAs/InP APD
Quantum Information Networks
after-pulsing effects, InGaAs APDs are usually operated in a gated mode, typically limiting the clock rate of the system to several MHz. As a result,
Advanced Photon Counting Techniques II - Optics East 2007 |...
Time-gated single-photon avalanche diode for time-resolved diffuse reflectance at small source-detector separation
Infrared Technology and Applications XXXV - SPIE Defense,...
The roadmap for low price- high performance IR detector based on LWIR to NIR light up-conversion approach
Need for and advantages of profiling CO2
Technology developments in laser, detector, and receiver system for an atmospheric CO2 lidar profiling system Syed Ismail1, Grady Koch1, Nurul
Appendix Appendix iLRS infoRmAtion ILRS Contributing...
USA Jet Propulsion Laboratory (JPL) USA Joint Center for Earth System Technology (JCET), University of Maryland, USA Baltimore County (UMBC) National