|
|
|
|
Welcome to GlobalSpec!
Find parts, products, suppliers, datasheets, and more for:
BJT Power Amplifier
Find Suppliers by Category
RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude.
Search by Specification |
Learn More
Products & Services
See also: Featured Products | Technical Articles | Engineering Web Results-
Supplier: Allied Electronics, Inc.Description: Silicon Complementary Transistors, High Voltage, Medium Power Switch, NPN Transistor Type Usable DC current gain to 2.0 ADC Designed for high-speed switching and linear amplifier applications for high-voltage Operational amplifiers, switching regulators, converters, inverters, deflection
- Polarity: NPN
- Package Type: Other
-
Supplier: Newark / element14Description: RF AMPLIFIER, NPN, 15V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency Typ ft:1.5GHz; Power Dissipation Pd:350mW; DC Collector Current:50mA; DC Current Gain hFE:200
- Polarity: NPN
- Package Type: TO-92
-
Supplier: ROHM Semiconductor, USA LLCDescription: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth. Features Compact power complex bipolar transistor for DC-DC
- Transistor Type / Technology: General Purpose BJT
- Polarity: PNP
- Package Type: Other
- Transistor Grade / Operating Range: Commercial
-
Supplier: ValueTronics International, Inc.Description: , SR810 or SR830, the gain is always set to 100. Power and control signals are brought from the lock-in by a 9-pin cable (included). The SR552 may also be operated independently by applying appropriate power supply voltages (±20 VDC, +5 VDC). 1.4 nV/√Hz input noise BJT input, 100
-
Supplier: Avago TechnologiesDescription: Medium power bipolar transistor. The AT-420XX is available is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. NF=1.9dB, Gain=14dB at 8V, 10mA; P1dB= 21dBm at 8V, 35mA (all at 2 GHz)
- Polarity: NPN
- Transistor Grade / Operating Range: Other
- Packing Method: Tray
-
Supplier: Central Semiconductor Corp.Description: Designed for high current amplifier applications
- Transistor Type / Technology: Power BJT Transistors
- Polarity: PNP
- Package Type: TO-251 / TO-252
- Transistor Grade / Operating Range: Commercial, Industrial
-
Supplier: Allied Electronics, Inc.Description: Silicon Complementary Transistors, High Voltage, Medium Power Switch, NPN Transistor Type Usable DC current gain to 2.0 ADC Designed for high-speed switching and linear amplifier applications for high-voltage Operational amplifiers, switching regulators, converters, inverters, deflection
- Polarity: NPN
- Package Type: Other
-
Supplier: Allied Electronics, Inc.Description: Silicon Complementary Transistors, High Voltage, Medium Power Switch, NPN Transistor Type Usable DC current gain to 2.0 ADC Designed for high-speed switching and linear amplifier applications for high-voltage Operational amplifiers, switching regulators, converters, inverters, deflection
- Polarity: NPN
- Package Type: Other
-
Supplier: Newark / element14Description: RF AMPLIFIER, NPN, 15V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency Typ ft:1.5GHz; Power Dissipation Pd:350mW; DC Collector Current:50mA; DC Current Gain hFE:200
- Polarity: NPN
- Package Type: TO-92
-
Supplier: Newark / element14Description: RF AMPLIFIER, NPN, 15V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency Typ ft:1.5GHz; Power Dissipation Pd:350mW; DC Collector Current:50mA; DC Current Gain hFE:200
- Polarity: NPN
- Package Type: TO-92
Featured Products for BJT Power Amplifier Top
-
. i.e. Vce, Vbe, and Vcb. However, Vce (collector-emitter voltage) with open base, designated as Vceo, is usually of most concern and defines the maximum circuit voltage of a bipolar transistor. Also as with all semiconductors devices, there are undesirable leakage currents in a transistor, notably Icbo ,collector junction leakage; and Iebo, emitter junction leakage. Selection of a Bipolar Transistor. Primary considerations when selecting a transistor are: Voltage ratings. Transistor power rating... (read more)Browse Power Bipolar Transistors Datasheets for American Microsemiconductor, Inc. -
Power Amplifiers For Legacy Communication designs as well as Virtually Every New & Emerging Communications System. AR Modular RF is recognized worldwide as a leading supplier of RF amplifier systems and RF amplifier modules. We're known for innovative technology, unsurpassed quality & dependability, and for an international support and service network that is second to none. With output powers from 5 - 5,000 watts and spanning frequencies from 0.01 - 6,000 MHz, the systems and modules... (read more)Browse RF Amplifiers Datasheets for AR Modular RF -
skills to provide cost effective, tailored solutions to meet your amplification and power management requirements. We can adapt our solutions to be compatible with your design. In General: View Performance Controls' table of typical specifications for PCI Power Amplifiers. These are not meant to be all inclusive, but only to illustrate PCI capabilities. If you have an application requiring a responsive, high performance, high power PWM amplifier with requirements in or near the ranges indicated... (read more)Browse Power Amplifiers Datasheets for PERFORMANCE CONTROLS, INC.® -
. Semiconductor Manufacturing and Packaging. Industrial Automation. In General: Typical specifications for PCI Power Amplifiers are outlined in the table on our site. These are not meant to be all inclusive, but only to illustrate PCI capabilities. If you have an application requiring a responsive, high performance, high power PWM amplifier with requirements in or near the ranges indicated, contact us. MRI Gradient Amplifiers. Gradient Amplifiers provide power to generate the variable (gradient) magnetic... (read more)Browse Servo Drives Datasheets for PERFORMANCE CONTROLS, INC.® -
Gradient Amplifiers provide power to generate the variable (gradient) magnetic field component for the MRI process. The fidelity, repeatability, stability and bandwidth of the gradient amplifier, along with power available are key parameters affecting the quality of the MRI image. Here are some key points about PCI gradient amplifiers and related services. Certified to meet UL-60601 and EN-60601 -1 -2 safety standards. Operating voltages are among the highest available for gradient amplifier... (read more)Browse Power Amplifiers Datasheets for PERFORMANCE CONTROLS, INC.® -
The small form factor of 3.9 cubic inches brings state-of-the-art miniature power amplifier technology to the war fighter, meeting present challenges in size and weight reduction. The NW-SSPA-15W-0.225-2.4 is ideal for broadband RF telemetry and military communication systems that require high reliability and high efficiency in a compact housing. Contact NuWaves Ltd. (read more)Browse RF Amplifiers Datasheets for NuWaves Ltd. -
The ever-increasing demands for more bandwidth, coupled with requirements for both high linearity and high efficiency create ever-increasing challenges in the design of power amplifiers. Despite recent progress in the development of new simulation tools, RF Power amplifier design remains too much of an art for nearly everyone but the true specialist. Over 60 years of successful design experience by its top designed make NuWaves true experts in power amplifier design. NuWaves is an RF Power... (read more)Browse RF Amplifiers Datasheets for NuWaves Ltd. -
The RF433PA, operating over the 350 to 450 MHz frequency range, is a bi-directional amplifier that has a receive and transmit path. The transmit mode delivers a typical RF output power of 8 Watts with a drive level of 10 mW. An onboard harmonic filter ensures that harmonics are kept to a minimum; while a limiter in the receive path prevents the receiver from being over-loaded from high-level RF signals. The bi-directional amplifier module comes in a miniature form factor and is ideal... (read more)Browse RF Amplifiers Datasheets for NuWaves Ltd. -
PERFORMANCE CONTROLS, INC. ® GA-150 is a 150 VDC, 75 Arms, 150 Apk pulse width modulated power amplifier, intended for use in precision control systems. The amplifier operates from a single source of power and provides a precisely controlled, high fidelity output current. The amplifier is packaged to fit in a standard 19" rack width with a 5.25" height (3U) and 25.75" depth penetration into the rack. This Power Amplifier has been designed to operate in a controlled environment... (read more)Browse Power Amplifiers Datasheets for PERFORMANCE CONTROLS, INC.® -
Skyworks Solutions, Inc. has introduced three 4 x 5 mm dual band WCDMA power amplifier modules (PAMs) with an integrated coupler. These PAMs are ideal for all WCDMA handset and datacard applications and enable a variety of compatible baseband/RF architectures. Only two decoupling caps are needed outside of the PA, making it a very clean and easy design/layout. Additional benefits include the same pin out for all three devices, allowing single phone board support of multiple frequency... (read more)Browse RF Amplifiers Datasheets for Skyworks Solutions, Inc.
Conduct Research Top
-
Power Semiconductors and ICs
and bipolar transistors. They have a MOS-like input with a BJT-like output. Voltage-controlled drive consumes little power because of the insulated gate. A large reverse blocking capability is possible because there is no body diode as in MOSFETs. IGBT output capability is on par with power...
Engineering Web Search: BJT Power Amplifier Top
|
Bipolar junction transistor - Wikipedia, the free encyclopedia BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. |
|
|
Transistor - Wikipedia, the free encyclopedia A transistor is a semiconductor device used to amplify and switch electronic signals and power. |
|
|
Analog Devices: Analog Dialogue: Considerations In... Considerations In Designing Single Supply, Low-Power Systems Part I: Designs Using Ac Line Power See Analog Devices, Inc. Information |
|
|
National Semiconductor MINI SOIC Package Products Low Voltage Audio Power Amplifier MINI SOIC (MUA08A) 350mW Audio Power Amplifier with Shutdown Mode See National Semiconductor Information |
|
|
[No Title] High Speed Low Power Low Distortion Voltage Feedback Amplifier 175 MHz Tiny Low Power Voltage Feedback Amplifier See National Semiconductor Information |
|
|
Power amplifier output stage BJT operationp. 27 BJT current gainp. 28 BJT characteristicsp. 29 Load linep. 31 |
|
|
Electronic Components & Supplies | Mouser See Mouser Electronics, Inc. Profile & Catalog |
|
|
Wireless and RF - Application Notes by Category App Note 579 Abstract Bluetooth Power Amplifier: System Performance Review See Maxim Integrated Products, Inc. Information |
|
|
QuickChip Design Example 2Low Power Silicon BJT LNA for 1.9GHz... QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz See Maxim Integrated Products, Inc. Information |
|
|
International Rectifier - Audio Reference Design Kits offers a complete class D audio power amplifier design, which contains protection functions and house keeping power supplies for ease of use. See International Rectifier Information |
More >>
