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Buckminster Fullerene Transistor
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Indium Corporation 
TPL, Inc. 
TPL, Inc. 
TPL, Inc.
Polyflon Company - a Crane Co. Company
Indium Corporation |
Products/Services for Buckminster Fullerene Transistor
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Nanomaterials - (266 companies)...such as flexible electronics, high density memory, nanoscale transistors, single electron devices (SEDs), or other electronic components. Over 10,000 nanoscale components can fit in the same area as a single microscale device. State-of-the-art commercial... Search by Specification | Learn More -
Transistors - (536 companies)In these circuits, the number of transistors can range from a few to a few billion. The transistor is considered to be one of the most important inventions of the 20th century because of its abundant use in most modern circuits and electronic systems... Search by Specification | Learn More -
Bipolar RF Transistors - (49 companies)RF transistors vary in terms of polarity, packaging, and packing methods. NPN is a physical bipolar junction transistor (BJT) arrangement in which the emitter and the collector are made of N-type material and the base is made of P-type material... Search by Specification | Learn More -
RF Transistors - (93 companies)...specifications (MIL-SPEC). IC Package Types. Basic integrated circuit (IC) package types for RF transistors are transistor outline (TO), small outline (SO), and small outline transistor (SOT). For each package type, many variants are available... Search by Specification | Learn More -
Darlington Transistors - (55 companies)...transistors. Darlington transistors are circuits that combine two bipolar transistors in a single device. They provide high current gain and require less space than configurations that use two discrete transistors. In Darlington pairs, transistor... Search by Specification | Learn More -
Insulated Gate Bipolar Transistors (IGBT) - (98 companies)Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching... Search by Specification | Learn More
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RF MOSFET Transistors - (35 companies)MOSFET RF transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. RF MOSFET Transistors Information... Search by Specification | Learn More
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Power Bipolar Transistors - (84 companies)...bipolar transistors meet screening levels for military specifications (MIL-SPEC). Basic IC package types for power bipolar transistors are transistor outline (TO), small outline (SO), and small outline transistor (SOT). For each package type, many... Search by Specification | Learn More
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Small-Signal Bipolar Transistors (BJT) - (82 companies)Temperature range for small-signal bipolar transistors is measured in degrees Fahrenheit or degrees Celsius. Basic IC package types for small-signal bipolar transistors are transistor outline (TO), small outline (SO), and small outline transistor (SOT... Search by Specification | Learn More
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Unijunction Transistors (UJT) - (19 companies)...at frequencies up to 1 MHz. A unijunction transistor can be used to trigger a silicon-controlled rectifier (SCR) after a predetermined period of time. Unijunction transistors (UJTs) can be the active device in relaxation oscillators. A relaxation... Search by Specification | Learn More
Product News for Buckminster Fullerene Transistor
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American Microsemiconductor, Inc.
Unijunction TransistorsWHEN IS A TRANSISTOR NOT A TRANSISTOR ?. Answer: When its a unijunction transistor. Strictly speaking, the unijunction transistor is not a transistor but a thyristor.It has no linear current gain and it can't be used as an amplifier! Its typical application is to trigger an Silicon Controlled Rectifier (SCR), although its output is often used to trigger other devices.Applications include: An SCR trigger, Oscillator, Timing, Sawtooth Generator, Long Time delays, etc. An example is the 2N4949... (read more)Browse Unijunction Transistors (UJT) Datasheets for American Microsemiconductor, Inc. -
Linear Integrated Systems, Inc.
NPN and PNP Monolithic Dual TransistorsLS310(NPN)and LS350(PNP) Series Monolithic Dual Transistors. Features: Low Offset/Tight Matching Monolithic Dual (0.5 to 3mV versions). High Gain (100 to 400 Beta versions). Tightly Matched Monolithic Dual (1-15mV versions). High Breakdown Voltage (25 to 60 Volt versions). Low Capacitance (cob=2pf). Designed for Low Offset, High Gain, Low drift amplification. Available in Surface Mount SOIC 8 lead and SOT23 6 lead packages. Also available in Tested Die, PDIP 8, TO-71 6, and TO-78 6 lead... (read more)Browse Small-Signal Bipolar Transistors (BJT) Datasheets for Linear Integrated Systems, Inc. -
American Microsemiconductor, Inc.
Bipolar Junction Transistor (BJT)Description of bipolar transistor. The transistor is primarily used as a current amplifier. When a small current signal is applied to the base terminal of a bipolar transistor, it is amplified in the collector circuit. This current amplification is referred to as hfe or beta and equals Ic/Ib. As with all semiconductors, breakdown voltage of a transistor is also a design limitation. There are breakdown voltages that must be taken into account for each combination of terminals of a transistor... (read more)Browse Power Bipolar Transistors Datasheets for American Microsemiconductor, Inc. -
TT Semiconductor, Inc.
HIgh Temperature Transistor ArraysTT Semiconductor is the leading manufacturer of electronic components designed to survive under extreme temperature ranges and harsh environmental conditions. The current standard product offering is focused on high performance analog and memory devices offered at 200C. The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. Fabricated... (read more)Browse Transistors Datasheets for TT Semiconductor, Inc. -
Mitsubishi Electric Power Products, Inc.
Insulated Gate Bipolar Transistors (IGBTs)Power Supply systems by Mitsubishi Electric. IGBT - Transistors with Excellent Performance Characteristics. Mitsubishi Electric is the leading manufacturer of Insulated Gate Bipolar Transistors (IGBTs), and now utilizes IGBTs in the converters and inverters of its 9700 Series UPS systems. These advanced, high-performance transistors provide a variety of intelligent features. High Ampacity Transistors (600A). High Speed Switching. Low Control Power. Design Features: IGBT(Converter/Inverter). 1:1... (read more)Browse Uninterruptible Power Supplies (UPS) Datasheets for Mitsubishi Electric Power Products, Inc. -
American Microsemiconductor, Inc.
PHOTO TRANSISTORS L14G1, L14G2, 14G3Photransistors L14G1,L14G2 and, L14G3. Has Fairchild, General Electric, QT, and Telefunken left you in the lurch for Phototransistors? Still waiting for shipment? Wait no more! Same day shipping from American Microsemiconductor. Finally , a dependable supplier of the Silicon Phototransistors. American Microsemiconductor Inc. is now supplying the L14G1, L14G2, and L14G3 narrow angle silicon phototransistor L14 family, in the TO-18 hermetic sealed package; featuring : 45 Volt breakdown, Current up... (read more)Browse Transistors Datasheets for American Microsemiconductor, Inc. -
Integra Technologies, Inc.
VDMOS Common Source RF Power TransistorsIntegra's line of VDMOS common source RF power transistor products boast unparalleled performance in the industry. They are designed for rugged operation in various broadband communication and broadcast applications. All gold refractory metal contact on silicon chips and the associated gold wire bonds offer superior reliability. Both hermetic, as well as epoxy sealed packages are available. Products come in discrete form, unmatched and/or partially matched as well as fully matched 50 ohm... (read more)Browse RF Transistors Datasheets for Integra Technologies, Inc. -
Integra Technologies, Inc.
ILD2735M120 High Power Pulsed TransistorIntegra Technologies demonstrates the advantages of LDMOS technology in pulsed radar applications. The high power pulsed transistor part number ILD2735M120 is designed for S-Band radar applications operating over the 2.7 - 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 120 watts of peak output power with 8-9dB gain typically. The ILD2735M120 will be released and available for sampling in Q4 of 2010. Maximum reliability is achieved through... (read more)Browse Transistors Datasheets for Integra Technologies, Inc. -
Integra Technologies, Inc.
ILD2731M200 High Power Pulsed TransistorIntegra Technologies demonstrates the advantages of LDMOS technology in pulsed radar applications. The high power pulsed transistor part number ILD2731M200 is designed for S-Band systems operating from 2.7 to 3.1 GHz. Operating at a pulse width of 300us with a duty factor of 10%, this device supplies a minimum of 200 watts of peak pulse power across the instantaneous operating bandwidth of 2.7-3.1 GHz. The ILD2731M200 will be released and available for sampling in Q4 of 2010. The high power... (read more)Browse Transistors Datasheets for Integra Technologies, Inc. -
Integra Technologies, Inc.
VHF-Band Pulsed Power TransistorThe high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 MHz. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth... (read more)Browse Transistors Datasheets for Integra Technologies, Inc.
Engineering Web Search: Buckminster Fullerene Transistor
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Carbon nanotube - Wikipedia, the free encyclopedia Carbon nanotubes Buckminsterfullerene Fullerene chemistry Applications In popular culture Timeline Carbon allotropes |
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History of quantum computing - Wikipedia, the free... Department of Oxford University, cage a qubit in a buckyball (a Buckminster fullerene particle), and demonstrated quantum "bang-bang" error |
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Scientists slice graphite into atom-thick sheets ? The... |
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Alkaline fluoride dope molecular films and applications for... Patent application title: Alkaline fluoride dope molecular films and applications for p-n junction and field-effect transistor |
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IEDM: Ein Blick ?ber den planaren CMOS-Tellerrand |
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Ambipolar charge carrier transport in organic semiconductor... mixtures of p-conductive copper-phthalocyanine and n-conductive buckminster fullerene as active layer. |
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acs_jz_jz-2010-00360t 1..6 By far the most common one is the Buckminster fullerene, C60, discovered Received Date: March 18, 2010 accidently at Rice University in the late |
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Glossary | Nano Fullerene ? A category of roughly spherical carbon nanoscale structures named after Buckminster Fuller?s geodesic spheres. |
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NANOTECNOLOGIA 63 Nanotecnologia dimensioni tipiche : da 100... 78 Bottom-up 2.1: Fullerene ? scoperto nel 1986, ? una struttura di atomi di carbonio in forma sferica (teorema di Eulero: servono 12 pentagoni e n |
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