Carrier Concentration Metrology

Conduct Research

• MICRO: Critical Material-Wafers
  by vapor-phase decomposition, inductively coupled plasma mass spectrometry (VPD ICP-MS); minority carrier lifetime, measured by microwave photoconductive decay (u-PCD); microroughness, measured by scanning force microscopy (SFM); and particles added, measured as light-point defects (LPDs) using a Surfscan...
• MICRO:February 1998:Product Technology News
  The open design of the 300-mm Process Enhancement Carrier maximizes chemical flow and reduces wafer masking to enhance wet bench process results. Because it has approximately one-half the volume and one-fourth the surface area of traditional carriers, the PEC reduces the potential for chemical...
• MICRO: Using a nondestructive in-line system to monitor ultrashallow junctions
  . Because there is a significant, built-in electric field at the junction edge, the distribution forms a sharp gradient aligned to that area. The index of refraction of a semiconductor is a function of conductivity and, therefore, of the excess carrier concentration. Consequently, the index of refraction...
• MICRO: Critical Materials Analysis
  carrier-gas streams. It is based on the idea that at thermodynamic equilibrium, the concentration of water vapor in a carrier gas that is exposed to an ice surface depends only on total system pressure (P) and saturation temperature (T). At the same time, that concentration is independent of gas flow rate...
• MICRO: Product Tech News
  , Booths 120, 121) An extension of the Infinity line of diamond CMP pad conditioners, the Infinity v6.1 disk offers the highest-strength synthetic diamond. The conditioner's diamond concentration has been optimized to achieve a bond strength improvement of more than 80% and a disk life improvement...
• MICRO:Product Technology News (Oct '99)
  and ensure the stability of concentration readings. The instrument also features an internal gas blender for parts-per-billion-level calibrations, an integrated carrier gas purifier for ease of installation and rapid start-up, and onboard pressure regulators. Information: 650/364-6895. (Semicon...
• MICRO: Brave New Materials
  wafer reclaim increases copper concentration and the possibility of copper deposition on the silicon surface. Solid copper removed from the surface of the wafer forms copper ions in the chemical bath, which can easily diffuse into the bulk of the silicon from either the. MICRO: Brave New Materials...
• MICRO: Wet Surfacing Tech
  critical to the performance of these gate dielectrics. Therefore, the formation of a stable and consistent Si/high-k interfacial layer is essential for ensuring device properties such as carrier mobility. This layer is also necessary to achieve a consistent and linear high-k dielectric deposition...
• MICRO: TechEmergent
  damped mode and interact with thermal features in the silicon. The laser also produces excessive electron-hole free carrier "plasma waves." The generation of both thermal and plasma waves by periodic heating causes optical parameters to vary periodically. These optical parameters are detected...
• Defect prevention and elimination: Where the rubber hits the road(map)
  as well as the ability of wafer isolation technology to facilitate fab automation, the International 300-mm Initiative (I300I) and nearly all Japanese IC manufacturers have chosen a closed carrier or pod, standard tool interface, and minienvironment architecture for 300-mm wafer processing. While...

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