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Description: Grate: Heavy Duty 1/4" plate Reinforced Slotted Outlet Location: Center Outside Diameter: 8.5in Start Depth: 4in Throat Size: 4.5in
- Drain Type: Trench Drain
- Strainer Shape: Square / Rectangular
- Body Material: Stainless Steel
Supplier: RS Components, Ltd.
Description: Channel Type:N,N; Maximum Continuous Drain Current:5A; Maximum Drain Source Voltage:60V; Supplier Package:SOP; Maximum Drain Source Resistance:0.05Ohms; Maximum Power Dissipation:1.5W; Configuration:Dual; Dual Drain; Category:Power MOSFET; Mounting:Surface Mount
- Transistor Type / Technology: Power MOSFET
- Polarity: N-Channel
- Package Type: Other
Supplier: 1-Source Electronic Components
Description: N CH MOSFET, 600V, 2.5A, TO-220FP Transistor Polarity:N Channel Continuous Drain Current Id:2.5A Drain Source Voltage Vds:600V On Resistance Rds(on):2.2ohm Rds(on) Test Voltage Vgs:10V Threshold Voltage Vgs Typ:4V RoHS Compliant: No
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Featured Products for Channel Drain Top
Dead Level Trench Drain System
Trench drains just got a whole lot easier. Make channel floating, pinching and misalignment a thing of the past. The uniquely engineered Dead Level ™ system's frame anchored design ties rebar to the structural frame, not the channels, eliminating problems during the concrete pour. Its solid flanged channel, end cap and frame connections create proper joints and alignment. Tired of struggling to cut trench drain pieces to fit your installation? The Dead Level ™ system comes... (read more)
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Parts by Number for Channel Drain Top
|Part #||Distributor||Manufacturer||Product Category||Description|
|0415392||RS Components, Ltd.||Toshiba||MOSFET||Channel Type:N; Maximum Continuous Drain Current:45A; Maximum Drain Source Voltage:30V; Supplier Package:SOP Advanced; Maximum Drain Source Resistance:0.0031Ohms; Maximum Power Dissipation:45W; Configuration:Single; Quad Drain, Triple Source; Mounting:Surface Mount; Category:Power MOSFET|
|4858291||RS Components, Ltd.||STMicroelectronics||MOSFET||Channel Type:N; Maximum Continuous Drain Current:11A; Maximum Drain Source Voltage:30V; Supplier Package:SOIC; Maximum Drain Source Resistance:0.0105Ohms; Configuration:Single; Quad Drain, Triple Source; Maximum Gate Source Voltage:18V; Typical Turn-Off Delay Time:23ns; Typical Turn-On Delay Time|
|7259300||RS Components, Ltd.||International Rectifier||MOSFET||Channel Type:N; Maximum Continuous Drain Current:11A; Maximum Drain Source Voltage:60V; Supplier Package:QFN; Maximum Drain Source Resistance:0.0144Ohms; Maximum Power Dissipation:3600mW; Configuration:Single; Quad Drain, Triple Source; Maximum Gate Source Voltage:20V; Typical Gate Charge @ Vgs...|
|7104761||RS Components, Ltd.||Vishay||MOSFET||Channel Type:P; Maximum Continuous Drain Current:4.3A; Maximum Drain Source Voltage:30V; Supplier Package:Chip FET; Maximum Drain Source Resistance:0.045Ohms; Maximum Power Dissipation:1300mW; Configuration:Single; Hex Drain; Maximum Gate Source Voltage:20V; Typical Turn-Off Delay Time:32ns|
|0509768||RS Components, Ltd.||NXP||MOSFET||Channel Type:N; Maximum Continuous Drain Current:23.7A; Maximum Drain Source Voltage:30V; Supplier Package:SOIC; Maximum Drain Source Resistance:0.0065Ohms; Configuration:Single; Quad Drain, Triple Source; Maximum Gate Source Voltage:20V; Typical Turn-Off Delay Time:80ns; Typical Turn-On Delay Time|
|5430484||RS Components, Ltd.||Vishay||MOSFET||Channel Type:N; Maximum Continuous Drain Current:1.3A; Maximum Drain Source Voltage:100V; Supplier Package:HexDIP; Maximum Drain Source Resistance:0.27Ohms; Configuration:Single; Dual Drain; Maximum Gate Source Voltage:10V; Typical Turn-Off Delay Time:21ns; Typical Turn-On Delay Time:9.8ns; Product|
Conduct Research Top
Dewatering the Channel Tunnel
AuCom soft starters have been used since the 1990s to drain water from the Channel Tunnel linking Great Britain to Europe. The Eurotunnel system consists of two rail tunnels, each 50 kilometres long, and a smaller service tunnel. Water is drained from the tunnels by large submersible pumps
Operation of 3- and 4- Terminal JFET
A junction gate field-effect transistor (JFET) is the simplest. type of field effect transistor. This device can be used as an. electronically-controlled switch or as a voltage-controlled. resistor. In a JFET, current flows through a semiconducting. channel between the "drain" terminal
A Modified MODPEX Model for MOSFET and Parameter Optimization Using Excel-based Genetic Algorithm
USA. Phoenix AZ USA. Zhiyang.email@example.com. Abstract—MODPEX is widely used in industry and universities. DRAIN. to produce Pspice model for power semiconductor devices,. including MOSFETs. However, the model generated by. MODPEX for MOSFETs does not include channel charge at. strong inversion
and perform more efficiently the rectification of the output voltage than rectifying diodes due to the low I×R drop through the channel. The N channel power MOSFET offers the lowest ON resistance and is relatively inexpensive. In order to reduce the MOSFET ON resistance, semiconductor manufacturers parallel
Latch-Up Protection for MOSFET Drivers
For MOSFET Drivers. Author: Microchip Technology Inc. Source P+. VS+. INTRODUCTION. R1 Bulk. Most CMOS ICs, given proper conditions, can “latch”. Q. Resistance. 1 P-Channel. (like an SCR), creating a short circuit from the positive. Parasitic. Drain P+. supply voltage to ground. This application note
Progress on Distributed Resistance Model for pHEMT
on. total resistance consists of the resistance of the corresponding. the drain side. The gate-drain access region is 1.2um in length. part of channel, contact resistances, resistances of gate and. Figure 1 illustrates all three kinds on gate positions and. source/drain terminals, and the resistance
High Electron Mobility Transistors (HEMT)
High electron mobility transistors (HEMTs) are used in microwave circuit applications. These transistors behave much like conventional field effect transistors (FETs): a conducting channel between drain and source electrodes can be affected by applying a voltage to the gate electrode. This causes
M539: Drivers for GaAs FET MMIC Switches and Digital Attenuators
source-to-drain resistance when there is no bias. When a negative voltage is applied to the gage, the electric field narrows the channel, increasing the source-to-drain resistance. The voltage that closes off the channel and creates the highest resistance of the FET is known as the "pinch off" voltage
Engineering Web Search: Channel Drain Top
ON Semiconductor NCP301: Voltage Detector Series with Open...
NCP301: Voltage Detector Series with Open Drain N-Channel Output
ON Semiconductor NCP303: Voltage Detector Series with...
NCP303: Voltage Detector Series with Programmable Delay and Open Drain N-Channel Output
MOSFET - Wikipedia, the free encyclopedia
threshold for making a conductive channel; there is little or no conduction between the terminals source and drain; the switch is off.
JFET - Wikipedia, the free encyclopedia
Electric charge flows through a semiconducting channel between "source" and "drain" terminals.
Vishay - manufacturer of discrete semiconductors and passive...
Drain-to-source voltage (VDS) P-channel Products » MOSFETs » PowerPAK 1212-8 to PowerPAK SO-8 packages » P-channel
Vishay - manufacturer of discrete semiconductors and passive...
Drain-to-source voltage (VDS) P-channel Products » MOSFETs » P-channel MOSFETs - P-channel
PSMN102-200Y N-channel TrenchMOS SiliconMAX standard level FET
Parameter Conditions Min Typ Max Unit VDS drain-source Tj 25 ?C; Tj 150 ?C - - 200 V voltage ID drain current Tmb = 25 ?C; VGS = 10 V; - - 21.5 A see
BF862 N-channel junction FET
2000 Jan 05 2 Error : Bad color NXP Semiconductors Product specification N-channel junction FET BF862 LIMITING VALUES In accordance with the Absolute