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Part # Distributor Manufacturer Product Category Description
RE46C167 Microchip Technology, Inc. Microchip Technology, Inc. Not Provided The RE46C167 device is a low-power, CMOS photoelectric type, smoke detector IC. With minimal external components, this circuit will provide all the required features for a photoelectric type smoke detector. Each design incorporates a gain selectable photo amplifier for use with an infrared emitter...
RE46C165 Microchip Technology, Inc. Microchip Technology, Inc. Not Provided The RE46C165 device is a low-power, CMOS photoelectric type, smoke detector IC. With minimal external components, this circuit will provide all the required features for a photoelectric type smoke detector. Each design incorporates a gain selectable photo amplifier for use with an infrared emitter...
RE46C168 Microchip Technology, Inc. Microchip Technology, Inc. Not Provided The RE46C168 device is a low-power, CMOS photoelectric type, smoke detector IC. With minimal external components, this circuit will provide all the required features for a photoelectric type smoke detector. Each design incorporates a gain selectable photo amplifier for use with an infrared emitter...

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  • EETimes.com | Electronics Industry News for EEs & Engineering Managers
    of trying to solicit the murder of a federal judge, but found him guilty of two lesser charges. Mohsen's legal team plans to appeal the guilty verdicts. Power amplifier claims lowest current consumption Avago Technologies has rolled out an enhancement-mode pseudomorphic high-electron-mobility
  • EETimes.com | Electronics Industry News for EEs & Engineering Managers
    Semtech offers 8-microamp charge pump IC with Capless technology Motorola orders Applied's CMP/cleaning tools for copper processes SpeedFam-IPEC to ship new CMP tool to U.S. beta site Kawasaki taps Cadence synthesis tools for ASIC support NEW ORDERS & DESIGN WINS National plans cell phone chips
  • Electron Multiplication CCDs Offer a Flexible Solution
    . However, the devices may not prove superior to intensified CCDs when it comes to applications that need extremely short exposure times. Electron multiplication CCDs use a conventional readout-node amplifier design but apply gain to the signal prior to readout. The benefit is an increase
  • EETimes.com | Electronics Industry News for EEs & Engineering Managers
    Semiconductor Alert! for April 24-28 Avant! claims court dismisses criminal charges in case brought by Cadence Virata reaps 400% increase in chip revenues in Q4 Wafer material suppliers cut losses as prospect for shortages grows Winbond, Toshiba to collaborate on 0.13-micron DRAM development ITC
  • Large-signal Modeling of SiGe HBT for PA Applications
    Accurate modeling of large-signal behavior of power amplifiers (PAs) is key in minimizing the number of design spins and design cycle time. This paper presents the 1- and 2-tone large-signal behavior of SiGe HBT with respect to power, frequency, bias, and transistor geometry. While the transistor's

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