Chemical Mechanical Planarization Slurry

Conduct Research

• Planarization Slurry (CMP)
  into nanoscale ranges, finer planarization slurry / chemical mechanical polishing (CMP) solutions may be required....
• Monitoring slurry stability to reduce process variability
  John P. Bare and Travis A. Lemke, As chemical mechanical planarization (CMP) becomes more widely used for polishing during microcircuit manufacture, increasingly sophisticated process control procedures are being developed and implemented. One of the key areas is measurement of slurry quality...
• Evaluating chemical mechanical cleaning technology for post-CMP applications
  John M. de Larios, Jackie Zhang, Eugene Zhao, Tom Gockel, and Michael Ravkin, Chemical mechanical planarization (CMP) has rapidly become a key technology in the production of logic and memory devices. Compared to etch, implant, and other more traditional semiconductor manufacturing processes, CMP...
• Evolution and Revolution of Cerium Oxide Slurries in CMP (.pdf)
  . For the chemical mechanical planarization (CMP) process, silica-based. slurries have traditionally been used at technology nodes of 90nm and higher, for. both Shallow Trench Isolation (STI) and Inner Layer Dielectric (ILD). applications. However, at 65nm and below, cerium oxide-based slurries are being...
• Recent Advances in Ceria-Based Slurries for STI and ILD CMP Applications (.pdf)
  . The slurries for ILD CMP give very fast step height removal rates (SHRR) and exhibit 'auto-stopping' behaviour. When polishing wafers with a variety of pattern densities and feature sizes, the cerium oxide slurries show lower dependency on pattern density, as compared to silica slurries. Chemical Mechanical...
• An Investigation of Ceria-Based Slurries Exhibiting Reverse-Prestonian Behavior (.pdf)
  , a novel feature of these slurries is described. This feature is the reverse-Prestonian behaviour which shows that, as downforce pressure increases during polishing, the oxide removal rate on blanket wafers decreases. Chemical Mechanical Planarization in Copper/Low-k Dielectric Integration Schemes...
• MICRO: Ultrapure Fluid/Slurry Delivery- McMillan (January 2001)
  other such facilities, Fab 25 has numerous chemical- mechanical planarization (CMP) tools, each of which uses a system of peristaltic pumps for process fluid delivery. At various times during each CMP process, these pumps may be delivering tungsten or oxide slurries, DI water, or ammonium hydroxide...
• Using surfactants in iron-based CMP slurries to minimize residual particles
  During recent years, the use of chemical-mechanical planarization (CMP) to remove excess coating material from wafer surfaces has increased dramatically, as has the literature on CMP research. Basically, the CMP process involves polishing wafers using a slurry that combines a chemical component...
• Development and Mechanisms of Action of a Ceria-Based Slurry for Shallow Trench Isolation CMP (.pdf)
  to FA pad-like dishing performance. One of the greatest challenges for the integration of STI. structures in circuits is to develop a well-controlled Polishing Mechanisms: Nitride Suppression. planarization process using Chemical Mechanical Polishing Slurries based on polyacrylic acid chemistry...
• Recent Advances in the Development of Ceria-Based Slurries for Inner Layer Dielectric CMP (.pdf)
  . (>1500A/min on TEOS) was too high for it to. 6. References. exhibit true self-stopping behavior. Figure 7. 1. J.M.Steigerwald, S.P.Murarka,. shows remaining oxide vs polishing time with. R.J.Gutmann, `Chemical Mechanical. overpolish. It can be seen that after the. Planarization of Microelectronic...

Engineering Web Search: Chemical Mechanical Planarization Slurry