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Parts by Number for Class B Power Amplifier Top

Part # Distributor Manufacturer Product Category Description
TAS5631BDKDR Texas Instruments High-Performance Analog Texas Instruments Semiconductors > Audio > Speaker Amplifier and Modulator > Mid/High-Power Amplifier PWM input 300W Stereo class D amplifier with integrated feedback 44-HSSOP 0 to 70
TAS5631BPHD Texas Instruments High-Performance Analog Texas Instruments Semiconductors > Audio > Speaker Amplifier and Modulator > Mid/High-Power Amplifier PWM input 300W Stereo class D amplifier with integrated feedback 64-HTQFP 0 to 70
4840852 RS Components, Ltd. NXP Audio Amplifier Amplifier Type:Class-B; Function:Speaker; Power Supply Type:Single; Input Signal Type:Single; Output Signal Type:Differential,Single; Output Type:2-Channel Stereo,4-Channel Stereo; Typical Voltage Gain:26dB; Typical Single Supply Voltage:14.4V; Supplier Package:DBSP; Rail to Rail:No
1827834 RS Components, Ltd. NXP Audio Amplifier Amplifier Type:Class-B; Function:Speaker; Power Supply Type:Single; Input Signal Type:Differential; Output Signal Type:Differential,Single; Output Type:2-Channel Stereo,4-Channel Stereo; Typical Voltage Gain:46dB; Typical Single Supply Voltage:14.4V; Supplier Package:DBSP; Product Width:4.6mm
7147336 RS Components, Ltd. STMicroelectronics Audio Amplifier Amplifier Type:Class-B; Function:Speaker; Power Supply Type:Single; Input Signal Type:Single; Output Signal Type:Single; Output Type:1-Channel Mono; Typical Voltage Gain:75dB; Typical Single Supply Voltage:5, 9, 12, 15V; Supplier Package:Mini-PDIP; Minimum Single Supply Voltage:3V

Conduct Research Top

  • Class B Amplifiers
    . If given a sine wave, each output device will operate for half the waveform. Thus, Class B amplifiers are very efficient; however, the linearity of the amplifier suffers when the signal approaches the point at which the output devices change. Class B operation amplifiers are not generally used
  • Class B Safety Software Library for PIC MCUs and dsPIC DSCs
    This application note describes the Class B Safety Software Library routines that detect the occurrence of Faults in a single channel CPU. These routines have been developed in accordance with the IEC 60730 standard to support the Class B certification process. These routines can be directly
  • Class C Amplifiers
    Class C amplifiers are used for radio-frequency transmissions. This class is similar to amplifiers of Class B operation in that each output stage device (negative, positive) is turned on for less than one-half cycle, and pulsed on and off through the duration of the half-cycle. Class C amplifiers
  • Multi-lead Organic Air-Cavity Package for High Power High Frequency RFICs
    ceramic. GHz. assembly process; b) the package to have improved. dimensional tolerances to better facilitate automated. RF power components used in the base station application. assembly; c) the same (or better) reliability than the current. usually require tradeoffs in the demands for high power
  • Phase Conjugate Laser Optics - Preface
    cavity or in a master-. oscillator power-amplifier structure is thus a crucial problem that must be taken into. account in solid-state laser sources. An elegant approach offering a great potential to. solve this question involves nonlinear optical phase conjugation. This technique. permits
  • Efficiency Improvement of a Handset WCDMA PA Module Using Adaptive Digital Predistortion
    , however,. linear output power. Then, in section III, the PAM is retuned,. 978-1-4244-6057-1/10/$26.00 ©2010 IEEE. 804. IMS 2010. -30. Original PA Module. -35. 28.5 dBm. B) -40. -44 dB. d. (. R. P -45. +1.8. dB. z. AC -50. H. M. 5- -55. Before DPD (lower). -60. Before DPD (upper). After DPD (lower
  • Oscillator Circuits For RTD Temperature Sensors
    . Thermistor. Silicon IC. Temperature Range. -200 to 850°C. -184 to 1260°C. -55 to +150°C. -55 to +125°C. Temperature (t). Class B = ±[0.012 +. Greater of ±2.2°C. Various,. Various,. Accuracy. (0.0019t) -6x10-7t2]. or ±0.75%. ±0.5 to 5°C. ±0.5 to 3°C. Output Signal. 0.00385 //°C. Voltage (40 µ/°C). 4% R/t
  • Recent Progress in III-V Devices and Modules for Next Generation Mobile Handsets
    contacts of the. FET and E, B, C are emitter, base and collector contacts of the HBT, respectively. Figure 2: Die stacking the pHEMT switch on top of the HBT power amplifier reduces package size from 16 mm2 to 9 mm2. References: 1) J. Y. Yang, F.J. Morris, D.L. Plumton, E.N. Jeffrey, "GaAs BIJFET

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