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Supplier: Bionomic Industries
Description: voltage and spark controls to maintain maximum electric field stability, nonfouling insulator locations, and new, improved materials of construction that provide longer life and more resistance to corrosive gases complete the advanced yet economical HEI WESP System.
- Applications: Abrasives, Coolant / Oil Mist, Fine Powders, General Cleaning, Non-free Flowing, Metalworking Chips / Fluids, Reclaim / Recycle, Toxic Media, Welding Fumes, Other
- Scrubber Model: Portable, Skid / Base Plate Mounted, Trailer / Truck, Other
- Orientation: Vertical
- Separation / Filtration System: Venturi, Other
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Supplier: Newark / element14
Description: BRT TRANSISTOR, 50V, 10K/10KOHM, SOT-23; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:10kohm; Collector Base Voltage:50V; Collector Current @ hfe:5mA; Collector Emitter Saturation Voltage Vce(sat):150mV
- Transistor Type / Technology: General Purpose BJT
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Supplier: Newark / element14
Description: Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:50mW; DC Collector Current:2A; No. of Pins:3; C-E Breakdown Voltage:100V; Collector Base Voltage:100V; Collector Current @ hfe:1A
- Transistor Type / Technology: General Purpose BJT
- Polarity: PNP
- Package Type: TO-220
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Supplier: Allied Electronics, Inc.
Description: General Purpose Amplifier, 80 V Collector-Emitter Voltage, 140 V Collector to Base Voltage Silicon planar epitaxial mounted in jedec TO-18 metal case Used for small signal, low noise industrial applications.
- Transistor Type / Technology: General Purpose BJT
- Polarity: NPN
- Package Type: Other
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Supplier: Newark / element14
Description: ; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency Typ ft:5.5GHz; Power Dissipation Pd:2W; Operating Temperature Range:-65°C to +150°C; RF Transistor Case:SOT-223; Collector Base Voltage:25V
- Polarity: NPN
- Package Type: SOT223
- Transistor Type / Technology: Bipolar RF Transistors
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Supplier: Comchip Technology Corporation
Description: Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage VCBO: BC856W= -80V BC857W= -50V BC858W= -30V -Operating and storage junction temperature range: TJ, TSTG= -65
- Transistor Type / Technology: General Purpose BJT
- Polarity: PNP
- Package Type: SOT323
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Supplier: Avago Technologies
Description: that of a conventional phototransistor coupler by reducing the base-collector capacitance. It is available in an 8 Pin DIP package. It is for use in TTL/COMS, TTL/LSTTL or wide bandwidth analog applications. Current transfer ratio (CTR) is 7% minimum at IF = 16 mA.
- Optocoupler Input: DC
- Optocoupler Output: Photodiode
- Mounting Option: Flat Pack, Through Hole (Plug-in)
Find Suppliers by Category Top
Parts by Number for Collector Base Voltage Top
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| 7115219 | RS Components, Ltd. | DiodesZetex | General Purpose Transistor | Type:PNP; Maximum DC Collector Current:3.5A; Maximum Collector Emitter Voltage:20V; Supplier Package:SOT-23; Configuration:Single; Quad Collector; Maximum Power Dissipation:1700mW; Maximum Operating Frequency:110MHz; Maximum Collector Base Voltage:25V; Maximum Emitter Base Voltage:7.5V; Maximum |
| 6900111 | RS Components, Ltd. | ON Semiconductor | General Purpose Transistor | Type:NPN; Maximum DC Collector Current:0.1A; Maximum Collector Emitter Voltage:32V; Supplier Package:SOT-23; Configuration:Single; Maximum Power Dissipation:300mW; Maximum Collector Base Voltage:32V; Maximum Emitter Base Voltage:5V; Maximum Collector Emitter Saturation Voltage:0.25V; Pin Count:3 |
| 6980413 | RS Components, Ltd. | Panasonic | General Purpose Transistor | Type:NPN; Maximum DC Collector Current:0.1A; Maximum Collector Emitter Voltage:50V; Supplier Package:SMini3-F2-B; Configuration:Single; Maximum Power Dissipation:150mW; Maximum Operating Frequency:150MHz; Maximum Collector Base Voltage:60V; Maximum Emitter Base Voltage:7V; Maximum Collector Emitter |
| 6980400 | RS Components, Ltd. | Panasonic | General Purpose Transistor | Type:NPN; Maximum DC Collector Current:0.1A; Maximum Collector Emitter Voltage:50V; Supplier Package:Mini3-G3-B; Configuration:Single; Maximum Power Dissipation:200mW; Maximum Operating Frequency:150MHz; Maximum Collector Base Voltage:60V; Maximum Emitter Base Voltage:7V; Maximum Collector Emitter |
| 6980390 | RS Components, Ltd. | Panasonic | General Purpose Transistor | Type:PNP; Maximum DC Collector Current:0.1A; Maximum Collector Emitter Voltage:50V; Supplier Package:SOT-23; Configuration:Single; Maximum Power Dissipation:200mW; Maximum Operating Frequency:150MHz; Maximum Collector Base Voltage:60V; Maximum Emitter Base Voltage:7V; Maximum Collector Emitter |
| 0485638 | RS Components, Ltd. | NXP | General Purpose Transistor | Type:NPN; Maximum DC Collector Current:5.1A; Maximum Collector Emitter Voltage:100V; Supplier Package:SC-73; Configuration:Single; Dual Collector; Maximum Operating Frequency:110MHz; Maximum Collector Base Voltage:100V; Maximum Emitter Base Voltage:5V; Pin Count:4; Category:Bipolar Small Signal |
Conduct Research Top
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Setting Alarms with T&D Wireless Base Stations
Whether you work in supply, medical monitoring, or industry, your business can save time and labor using automated wireless monitoring systems provided by CAS DataLoggers. Our T&D RTR-500-AW Wireless Base Station and RTR-500-NW Network Base Station both feature alarm capabilities to immediately
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JFET Application Note: Reset Transistor
(because the bias difference. is smaller than the forward voltage of the junction). When a positive. bias is applied to the reset pad, the emitter-base junction is reverse-. biased as well, and the transistor is in cutoff mode, with essentially no. Source. current flowing between collector and emitter
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Technical Article: Bipolar Transistor Tutorial
amplifier. When a small current signal is applied to the base terminal, it is amplified in the collector circuit. This current amplification is referred to as HFE or beta and equals Ic/Ib. As with all semiconductors, breakdown voltage is a design limitation. There are breakdown voltages that must
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LabVIEW Goes Wireless With T&D!
are designed for operation in punishing environments with models measuring temperature, humidity, voltage, current and event counting. The recorders act as remote units which capture the data and send their readings to the base stations which wirelessly download all current readings at set intervals
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Designing with HV Microcontrollers
supply and pushes it. Applications" (DS00898). onto the higher supply voltage, reducing variations in. TIP #4. TRIAC DRIVES. the load current. In systems controlling AC powered loads, a TRIAC is. Note: The base current required to bias the tran-. often employed as the output drive (see Figure 4
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High Volume Test Methodology for HBT Device Ruggedness Characterization
test is presented in Figure 2. Several device parameters are extracted from these curves. First, BVceo is recorded as the maximum collector voltage. while the collector current is still substantially low and the. TEST METHODOLOGY. controlled base current has a value needed to generate a. 0.001
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Technical Reference: What is the meaning of Vf as it Relates to a Diode or Rectifier?
transistor?. A bipolar transistor is a current amplifying device. An input current results in an amplified output current Hfe=Ic/Ib, where Ic is the output or collector current and Ib is the input or base current. The FET on the other hand is a transconductance device, that is an input voltage
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Determining MOSFET Driver Needs for Motor Drive Applications
to that of the IGBT. transistor used to be the device of choice for motor. In low voltage applications, this is achievable as the. control due to it's ability to handle high currents and. RDS-ON of MOSFETs can be in the 10's of mil i-ohms. high voltages. This is no longer the case. The MOSFET. At higher
Engineering Web Search: Collector Base Voltage Top
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Common collector - Wikipedia, the free encyclopedia
Vdiff and adjusts its emitter voltage almost equal (less VBEO) to the input voltage by passing the according collector current through the emitter
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Schmitt trigger - Wikipedia, the free encyclopedia
Its collector voltage goes down and Q2 begins going cut-off, because the voltage divider now provides lower Q2 base voltage.
- PN2222A_MMBT2222A_PZT2222A 20100802.fm
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BSP50 NPN Darlington Transistor
Characteristics V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5 V ICES
- EMC2DXV5T1 - Dual Common Base-Collector Bias Resistor...
- 2n6284.rev4
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Transistors
If a voltage is applied to the base resistor a current now flows into the base (base emitter junction). If a resistor is connected between the
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BC856; BC857; BC858 PNP general purpose transistors
MAX. UNIT VCBO collector-base voltage open emitter BC856 ??? ???80 V BC857 ??? ???50 V BC858 ??? ???30 V VCEO collector-emitter voltage open base