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Conduct Research Top

  • Recent Advances in the Development of Ceria-Based Slurries for Inner Layer Dielectric CMP (.pdf)
    Standard Inner Layer Dielectric (ILD) polishing utilizes an endpoint detection or a fixed time process to determine when to stop polishing. This can create non-uniformities across the oxide surface caused by both within die topography variations and within wafer polishing rate variations (1...
  • An Investigation of Ceria-Based Slurries Exhibiting Reverse-Prestonian Behavior (.pdf)
    , a novel feature of these slurries is described. This feature is the reverse-Prestonian behaviour which shows that, as downforce pressure increases during polishing, the oxide removal rate on blanket wafers decreases. Chemical Mechanical Planarization in Copper/Low-k Dielectric Integration Schemes...
  • The Real Impact of Selectivity on CMP Performance (.pdf)
    a well-controlled planarization process using Chemical Mechanical Polishing (CMP). The CMP process is carried out following the formation of the isolation structures (trenches) by. etching and the filling of the trenches with a dielectric material (traditionally HDP CVD oxide. down to the 45nm...
  • MICRO: Materials Integration
    Abhay Ramrao Deshmukh, National Semiconductor he planarization of interlevel dielectric (ILD) is critical to the success of multilevel metallization processes. In multilevel metallization, patterned conductors and dielectric layers at one level can create severe topography problems for the layers...
  • MICRO:Building Copperopolis, by Hugh Li, p.35 (March '99)
    planarization (CMP) has become the process of choice. In a damascene process, instead of depositing metal and then etching back the dielectric, the dielectric is patterned before the metal is deposited as a film, filling the openings in the dielectric. The film is then polished using a CMP slurry...
  • MICRO: Defect/Yield Analysis & Metrology
    led manufacturers to adopt damascene processes, using chemical-mechanical planarization (CMP) to remove excess copper and associated barrier metals. The challenge is to optimize CMP process uniformity, which means minimizing copper dishing and dielectric erosion and ensuring that structures...
  • MICRO: Advanced Process
    , nitride, and oxide, after which a targeted etch is performed on the underlying silicon. The resulting trenches, depicted in the schematic diagram in Figure 1, are then filled with dielectric material to form isolation barriers between adjacent electrical structures. The STI process is considered...
  • MICRO: Materials Integration
    . It was composed of >>99% DI water. The chemistries' compatibility with the dielectric film was evaluated by determining the characteristics of blanket dielectric films. Their cleaning effectiveness was determined by tilt scanning electron microscopy (SEM) analysis. Based on the results of that analysis, best...
  • Development and Mechanisms of Action of a Ceria-Based Slurry for Shallow Trench Isolation CMP (.pdf)
    generally. (CMP). The CMP process is carried out following the show a lower oxide to nitride blanket wafer selectivity. formation of the isolation structures (trenches) by etching and. (~30:1) compared with slurries based on amino acid. the filling of the trenches with a dielectric material chemistry...
  • Ceria Based Slurries for STI and 'Self-Stopping' ILD Polishing: Novel Formulations and Mechanistic Understanding (.pdf)
    Polishing (CMP). CMP is carried out following the formation of the isolation structures (trenches) by etching and the filling of the trenches with a dielectric material (usually HDP CVD oxide). Slurry Development for Selective and Non-Selective Polishing Schemes on SiLKTM Integrated Wafers Ceria...

Engineering Web Search: Dielectric Blanket Top

Polyester - Wikipedia, the free encyclopedia
films, tarpaulin, canoes, liquid crystal displays, holograms, filters, dielectric film for capacitors, film insulation for wire and insulating tapes.
Atmosphere of Earth - Wikipedia, the free encyclopedia

Dielectric Fluids
Haltermann Products - Dielectric Fluids Dielectric Fluids Ester Oils /haltermann/products/estisolink.htm
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PFET gate layer and a NFET gate layer and a PFET gate dielectric layer a NFET gate dielectric layer out of said gate metal material and said high-k
Abs. 614, 204th Meeting, ? 2003 The Electrochemical Society,...
of Plasma Strip Processes Table 1. Typical dielectric constant shifts due to PR On OSG Low-k Dielectric Films strip (k shift = k post ? k pre)
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Abs. 616, 204th Meeting, ? 2003 The Electrochemical Society,...
A B Addition of pores and porosity is a common plan for reducing the dielectric response of insulating materials for future generations of
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Detection of nanoscale etch and ash damage to nanoporous...

Extraction of effective dielectric constants and the effect of...
Extraction of effective dielectric constants and the effect of process damage of low-k dielectrics for advanced interconnects
INTERCONNECT STRUCTURE WITH BI-LAYER METAL CAP - Patent...
depositing a blanket layer of a dielectric capping layer, wherein said depositing covers an exposed surface of said dielectric material layer and a
Reactive ion etching and characterization of p-silk ultra...
Material characterization was done using blanket films after curing and the effect of exposure to different conventional plasma etch gas mixtures was

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