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Part # Distributor Manufacturer Product Category Description
10310525 Radwell Slaughter Co Test Equipment, Test/Meter Accessory Module TESTER DIELECTRIC BREAKDOWN AND LEAKAGE

Conduct Research Top

  • Breakdown analysis of a power transformer terminal lead
    For dielectric breakdown analysis, a common procedure is applied which is based on obtaining the field data from FE electrostatic field analyses. This article uses the simulation of a shielding ring and terminal lead of a typical power engineering transformer as an example.
  • Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology
    film is shown to have significantly superior and higher dielectric breakdown voltage and lower leakage current characteristics, as compared to the single layer film, while the capacitance density is found to be similar. Additionally, the multi-layer Si3N4 film is shown to have lower compressive stress
  • The Megger Guide to Oil Breakdown Dielectric Testing
    Oils that combine a high flashpoint with high dielectric strength have long been used as an insulating medium in. transformers, switchgear and other electrical apparatus. To ensure that the dielectric strength of the oil does not. deteriorate however, proper maintenance is essential, and the basis
  • ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology
    25 to 150oC, the breakdown voltage of both films decreased, while the leakage current increased. These results show that both ALD HfO2 and Al2O3 are. compatible with, and suitable as MIM capacitor dielectric in GaAs HBT technology and can be adjusted to meet the specific application
  • Electron Trapping in Polymer Insulators
    molecular properties, space charge and insulation failure. The presence of space charge in the polymeric insulation of high-voltage cables is correlated with dielectric breakdown. The
  • Arc Tracking and Silicone Self-Fusing Tape
    Many electrical insulation applications are designed with dielectric breakdown strength (DBS), or the voltage potential required to break through an electrically insulating material, as a major factor. While this is a good test to determine how resistive a material is through its volume it does
  • Application Note - Effect of Solder Reflow on Secure(R) Adhesive
    expansion between the different substrates cause stress within the adhesive layer. The ability of Secure TM 1500FG to deal with this stress is determined as the difference in before and after values of adhesion strength, thermal impedance, and dielectric breakdown strength. It is shown that Secure TM
  • AN0005 Mechanical Cracking
    dielectric breakdown leading to capacitor failure in service. Mechanical cracks are created by excessive mechanical stress after the capacitors have been soldered onto the substrate. Excessive mechanical stress can be the result of the following: *?Exceptional Circumstances _ Interference fit
  • MICRO: Critical Materials Delivery
    . Given this trend, quality control of chemicals and the determination of their integrity by analytical means is crucial. The reagent chemicals used in semiconductor manufacturing processes, however, can be a significant source of IC device failure. Dielectric breakdowns, stress effects, and yield
  • AN0022 Open Mode Capacitors
    assembly test. Over time, moisture penetration into the crack can cause a reduction in insulation resistance and eventual dielectric breakdown leading to capacitor failure in service.

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