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Supplier: CorActive High-Tech, Inc.
Description: High Yb Doping concentration, Unrivaled power conversion efficiency
- Fiber Type: Double Clad, Ytterbium Doped
Supplier: PLANSEE SE
Description: Tungsten electrodes from PLANSEE with their extremely high melting point are used for TIG welding. The oxide doping of tungsten guarantees a perfect ignition and arc stability. TIG welding electrodes can be ordered directly in the PLANSEE online shop: plansee-express.com
- Material: Aluminum / Aluminum Alloy
- Form / Shape: Application Specific / Custom, Rod Stock
- Applications / Industry: Specialty / Other
Supplier: Umicore Materials
Description: Zano®Al is a specialty aluminium-doped nano sized zinc oxide. The aluminium doping gives Zano®Al its electro conductive properties which are typically within the anti-static level. In addition, Zano®Al provides IR blocking properties, combined with broad-band UVA/UVB absorption.
- Application: Nanoelectronics, Specialty / Other
- Type: Nano Powder / Particulate
Supplier: Softchoice Corporation
Description: , distinguished by its superior technical and customer services. With plans to continue expanding its services, Black Box is poised for excellence well into the future. PRODUCT FEATURES: High-precision doping technology for low back reflection and increased fiber signal accuracy; Precision zirconia alignment
- Cable Type: Single Mode
- Connector Type: LC
Supplier: Despatch Industries
Description: produces highly uniform emitters using aqueous-based doping. This repeatability enables higher sheet resistances, excellent yields and optimum cell efficiency.
- Application: Other
- External Configuration: Continuous (Convey, Shuttle)
- Heat Source / Transfer: Electric / Resistance
- Controller Type: Programmable
Description: Features High cost-performance type of PhotoMOS relay 1 Form B output Low on-resistance This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Doublediffused and Selective Doping) method. Reinforced insulation of 5,000 V More than 0.4 mm internal insulation
- Solid State Relay Type: Optically Isolated Relay
- Application Type: General Application Relay
- Mounting: Socket or Plug-in Style
- Input Voltage Type: AC
Supplier: Keller America, Inc.
Description: elastic silicon chip, and ensuring that neither the pressure media nor the reference media (in the gauge version) come into contact with any sensitive parts. Temperature Compensation: Each unit is fully tested and compensated. Span errors are reduced by selecting the semiconductor doping levels so
- Electrical Output: Analog Voltage, Analog Current
- Sensor Technology: Semiconductor Piezoresistive
- Pressure Reading: Absolute, Gauge
- Media: Liquid, Gas
Supplier: Umicore Materials
Description: of germanium. Our highly efficient installations allow a recovery of germanium from various waste and scrap sources. Our product development focuses on increased applicability of our supplies in our clients' processes. Germanium tetrachloride GeCl4 is used as a doping agent in the core of a silica glass
Supplier: ValueTronics International, Inc.
Description: measurement for performing doping profile of wafers. C-V characterization and sorting of varactor diodes. Capacitance testing of rf mixer and switching diodes. Testing capacitors with an applied DC bias for incoming inspection. Measurement Time: 10ms/20ms/30ms Measurement Accuracy: 0.1% (20ms
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Featured Products for Doping Top
In-line Diffusion Furnace
provides advanced profile capability and a fully comprehensive software system. In-line processing offers reduced wafer handling and greater throughput than batch processing. With less handling you will have less breakage and increased yield. The Despatch Diffusion Furnace combined with USI's Deposition tool consistently produces highly uniform emitters using aqueous-based doping. This repeatability enables higher sheet resistances, excellent yields and optimum cell efficiency. (read more)
Browse Furnaces (Industrial) Datasheets for Despatch Industries
Conduct Research Top
Achieving High Reliability Low-Cost Lead-Free SAC Solder Joints via Mn Doping
, <0.1% Mn. SACM alloy achieved a higher drop test and dynamic bending test reliability than SAC105 and SAC305, and exceeded SnPb for many test conditions. Read more: http://www.indium.com/technical-documents/whitepaper/achieving-high-reliability-lowcost-leadfree-sac-solder-joints-via-mn-doping
Advanced Topics on Erbium Doped Fibers for High Performance Amplifiers (.pdf)
be under good control. This paper reviews the current status and recent progress on erbium doped fibers, illustrates C and L-band spectral characteristics resulting from different doping compositions, presents some approaches for efficient high power amplifiers, and discusses some EDF nonlinear effects
Investigation of electron delay in the base on noise performance in InGaP heterojunction bipolar transistors
quasi-ballistic [4, 5]. Thus fT is expected to be higher for a thinner base width. HBT. However, the base resistance (RB) increases as wB. shrinks resulting in compromised power gain and noise. performance. Therefore a higher base doping is required to. maintain low sheet resistance. Microsoft Word
Radiation Defect Engineering: Selected Topics in Electronics and Systems: Vol. 37
Radiation Defect Engineering: Selected Topics in Electronics and Systems: Vol. 37. Exploring radiation doping, this book considers the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. Books24x7
Femtosecond and Nanosecond Laser Micromachining of Oxidized Multi-Walled Carbon Nanotube Doped Morthane
offer better thermal conductivity and structural strength over virgin polymer material1. Carbon doping of polymers has been a common engineering practice for many years. þÿ Femtosecond and nanosecond laser micromachining of oxidized multi-. wall carbon nanotube doped morthane. Kenneth E. Hixa
Design Concepts for Semiconductor based Ultra-Linear Varactor Circuits (Invited)
for. semiconductor based ultra-linear varactors. Implementation issues regarding the optimum doping. profiles are discussed. Design considerations for. dedicated bias networks that provide optimum thirdorder. intermodulation cancellation for the various. varactor configurations are presented. To give
HBT Epitaxial Material Matching and Qualification for High Volume Production
pace with market demands. Traditional methods of. individual layer thickness and doping matching, such as. Secondary Ion Mass Spectroscopy (SIMS), have limitations. when applied to heterojunctions and subtle interface matching. Sometimes a subtle epi interface mismatch can create. significant
Step-recovery diodes or snap-off diodes use graded doping where the doping level of the semiconductive materials is reduced as the PN junction is approached. This produces an abrupt turn-off time by allowing a very fast release of stored charge when switching from forward to reverse bias
Engineering Web Search: Doping Top
HowStuffWorks "Doping Silicon: Diodes and...
Doping Silicon You can change the behavior of silicon and turn it into a conductor by doping it. Doping Silicon 3 Diodes and Transistors
Gas-Immersed Laser Doping - What does GILD stand for? Acronyms...
(redirected from Gas-Immersed Laser Doping) Gas-Immersed Laser Doping GILD Goddard Infrared Locking Data System
Optimal Doping Profiles via Geometric Programming
Optimal Doping Profiles via Geometric Programming opt_doping_profile.pdf We first consider the problem of
Article on doping concentration, number density, laser-active...
Doping Concentration <<< | >>> | Feedback
Doping method, doping apparatus, and control system for doping...
Abstract: A doping method capable of controlling a dose amount in response to a change the ratio in ion species during a doping process, a control
Doping | Society of Plastics Engineers
Doping ?In semiconductor production, doping is the process of
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Silicon Doping | Nanofabrication Facility @ NCSU
Silicon Doping n-Type Doping p-type Doping Silicon Doping Silicon doping is available in the Tylan Furnace bank.