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Total internal reflection - Wikipedia, the free encyclopedia Total internal reflection From Wikipedia, the free encyclopedia |
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Field-effect transistor - Wikipedia, the free encyclopedia The device consists of an active channel through which majority charge carriers, electrons or holes, flow from the source to the drain. |
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Application Note AN-937 Gate Drive Characteristics and... DRAIN-SOURCE VOLTAGE LOAD DRAIN-SOURCE STRAY INDUCTANCE I DRIVE CIRCUIT RESISTANCE G "OPEN CIRCUIT" SOURCE "OPEN CIRCUIT" DRIVE PULSE GATE-SOURCE See International Rectifier Information |
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PD - 9.1673A IRFIZ24E HEXFET? Power MOSFET l Advanced Process... ??? 0.052 ??? V/?C Reference to 25?C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ??? ??? 0.071 VGS = 10V, ID = 7.8A VGS(th) Gate Threshold See International Rectifier Information |
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IRFIBE30G, SiHFIBE30G Vishay Siliconix Power MOSFET FEATURES... Maximum Junction-to-Ambient RthJA - 65 ?C/W Maximum Junction-to-Case (Drain) RthJC - 3.6 SPECIFICATIONS TJ = 25 ?C, unless otherwise noted PARAMETER See Vishay Intertechnology, Inc. Information |
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V I S H A y I n T E R T E C H n O l O G y, I n C . C A P A C I... capacitor voltage breakdown through a unique and world wide patented internal design structure that prevents surface arc- www.vishay.com Vishay See Vishay Intertechnology, Inc. Information |
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Single Photon Counting in the Visible L. Str?der, M. Porro, G.... |
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Investigation of the Novel Attributes of a Vertical MOSFET... Investigation of the Novel Attributes of a Vertical MOSFET with Internal Block Layer (bVMOS): 2-D Simulation Study |
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Flammable and combustible liquids. - 1910.106 "Provisions for internal corrosion." When tanks are not designed in accordance with the American Petroleum Institute, American Society of Mechanical See Occupational Safety & Health Administration (OSHA) Information |
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Read Isolated Digital States Without Power Drain - Maxim Read Isolated Digital States Without Power Drain See Maxim Integrated Products, Inc. Information |