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Parts by Number for Epitaxial Silicon Transistor

Part # Distributor Manufacturer Product Category Description
KSR1106-SM-T ASAP Semiconductor SAMSUNG Not Provided NPN Epitaxial Silicon Transistor, Switching Application,Bias Res
MMBT3904K ASAP Semiconductor FAIRCHILD Not Provided SOT-23, NPN EPITAXIAL SILICON TRANSISTOR
KRC404-KE-T70 ASAP Semiconductor KEC Not Provided NPN Epitaxial Silicon Transistor, Switching Application,Bias Res
KSR1008-SM-A ASAP Semiconductor SAMSUNG Not Provided NPN Epitaxial Silicon Transistor, Switching Application,Bias Res
KRA305-KE-T70 ASAP Semiconductor KEC Not Provided PNP Epitaxial Silicon Transistor, Switching Application,Bias Res
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Conduct Research

Microsoft Word - Epi Matching_final.doc HBT Epitaxial Material Matching and Qualification for High Volume Production. Mike Sun, Peter Zampardi, Cristian Cismaru, and Lance Rushing. Skyworks Solutions, Inc., Newbury Park. mike.sun@skyworksinc.com. (805)480-4456. Keywords: HBT, Epitaxy Materials, SIMS...

Silicon on sapphire (SOS) is a hetero-epitaxial process wherein a thin layer of silicon is 'grown” on a sapphire (Al2O3) wafer. SOS is part of the silicon on insulator (SOI) family of CMOS technologies. Silicon on sapphire is primarily used in military and space applications because of its inherent...

Mark D. Dupuis, Stephen St.Onge, Ryan Wuthrich, Heidi L. Greer, Steven S. Williams, Thomas W. Weeks, and William J. Miller, The development of a low-temperature UHV/CVD technique for depositing epitaxial silicon has made it possible to implement high-yield production of SiGe heterojunction bipolar...

...significant GaAs. sloped re-entrant profile trenches that are typically formed when. device degradation occurs, where the interface between the typical. epitaxial layers of GaAs are wet-etched due to the GaAs crystal. GaAs contact metals and the GaAs epitaxial layers degrades, as Ga. orientation...

Developing rugged transistors requires careful. consideration of the HBT's collector design. In this work. we present a test methodology for high-volume, in-line. measurement of device ruggedness. This method is useful. not only when developing new epitaxial structures for. HBT devices, but also...

Randy Williams and Robert Jacques, ; and Mustafa Akbulut and Wayne Chen, A collaborative study that used an advanced unpatterned wafer inspection system found that epitaxial defects and their corresponding impact on device yield varied between wafer suppliers. Silicon wafers with an epitaxially...

...the transistor channel. A number of strain combinations (tensile and compressive SiN, selective epitaxial SiGe, etc.), which vary depending on the process integration schemes of the respective companies, are already in use in many leading-edge fabs. This issue's Hot Button presents the viewpoints...

...demonstrates the quality of the piece-wise fitting. Since the epitaxial layer for this kind of hyperabrupt varactor has. approach. relatively high resistivity, the series resistance is strongly depen-. Special consideration was given to the fit at the lowest capaci-. dent on the reverse voltage applied...

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