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Parts by Number for Epitaxial Silicon Transistor Top

Part # Distributor Manufacturer Product Category Description
PN2222A(KTN2222A)-KE ASAP Semiconductor KEC Not Provided NPN Epitaxial Silicon Transistor, Switching Application, 40V/600
KST4403(M)-SM-T ASAP Semiconductor SAMSUNG Not Provided PNP Epitaxial Silicon Transistor, Switching Application, -40V/-6
KSR1002-SM-B ASAP Semiconductor SAMSUNG Not Provided NPN Epitaxial Silicon Transistor, Switching Application,Bias Res
KRA305-KE-T70 ASAP Semiconductor KEC Not Provided PNP Epitaxial Silicon Transistor, Switching Application,Bias Res
2SC4027 ASAP Semiconductor SANYO Not Provided SANYO 2SC4027 NPN Epitaxial Planar Silicon Transistor, High-volt
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Conduct Research Top

  • Silicon on Sapphire (SOS)
    Silicon on sapphire (SOS) is a hetero-epitaxial process wherein a thin layer of silicon is 'grown” on a sapphire (Al2O3) wafer. SOS is part of the silicon on insulator (SOI) family of CMOS technologies. Silicon on sapphire is primarily used in military and space applications because of its inherent
  • MICRO: Implementing SiGe technology to produce heterojunction bipolar transistors
    Mark D. Dupuis, Stephen St.Onge, Ryan Wuthrich, Heidi L. Greer, Steven S. Williams, Thomas W. Weeks, and William J. Miller, The development of a low-temperature UHV/CVD technique for depositing epitaxial silicon has made it possible to implement high-yield production of SiGe heterojunction bipolar
  • Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology
    , significant GaAs. sloped re-entrant profile trenches that are typically formed when. device degradation occurs, where the interface between the typical. epitaxial layers of GaAs are wet-etched due to the GaAs crystal. GaAs contact metals and the GaAs epitaxial layers degrades, as Ga. orientation
  • MICRO: Best of ASMC- Williams (January 2001)
    Randy Williams and Robert Jacques, ; and Mustafa Akbulut and Wayne Chen, A collaborative study that used an advanced unpatterned wafer inspection system found that epitaxial defects and their corresponding impact on device yield varied between wafer suppliers. Silicon wafers with an epitaxially
  • MICRO: The Hot Button
    the transistor channel. A number of strain combinations (tensile and compressive SiN, selective epitaxial SiGe, etc.), which vary depending on the process integration schemes of the respective companies, are already in use in many leading-edge fabs. This issue's Hot Button presents the viewpoints
  • A Balanced Wideband VCO for Set-Top TV Tuner Applications
    demonstrates the quality of the piece-wise fitting. Since the epitaxial layer for this kind of hyperabrupt varactor has. approach. relatively high resistivity, the series resistance is strongly depen-. Special consideration was given to the fit at the lowest capaci-. dent on the reverse voltage applied

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