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Conduct Research Top

  • Silicon on Sapphire (SOS)
    Silicon on sapphire (SOS) is a hetero-epitaxial process wherein a thin layer of silicon is 'grown” on a sapphire (Al2O3) wafer. SOS is part of the silicon on insulator (SOI) family of CMOS technologies. Silicon on sapphire is primarily used in military and space applications because of its inherent
  • MICRO: Implementing SiGe technology to produce heterojunction bipolar transistors
    Mark D. Dupuis, Stephen St.Onge, Ryan Wuthrich, Heidi L. Greer, Steven S. Williams, Thomas W. Weeks, and William J. Miller, The development of a low-temperature UHV/CVD technique for depositing epitaxial silicon has made it possible to implement high-yield production of SiGe heterojunction bipolar
  • MICRO: Best of ASMC- Williams (January 2001)
    Randy Williams and Robert Jacques, ; and Mustafa Akbulut and Wayne Chen, A collaborative study that used an advanced unpatterned wafer inspection system found that epitaxial defects and their corresponding impact on device yield varied between wafer suppliers. Silicon wafers with an epitaxially
  • MICRO: The Hot Button
    the transistor channel. A number of strain combinations (tensile and compressive SiN, selective epitaxial SiGe, etc.), which vary depending on the process integration schemes of the respective companies, are already in use in many leading-edge fabs. This issue's Hot Button presents the viewpoints

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