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Supplier: Allied Electronics, Inc.
Description: General Purpose Amplifier, 80 V Collector-Emitter Voltage, 140 V Collector to Base Voltage Silicon planar epitaxial mounted in jedec TO-18 metal case Used for small signal, low noise industrial applications.
- Transistor Type / Technology: General Purpose BJT
- Polarity: NPN
- Package Type: Other
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Supplier: Allied Electronics, Inc.
Description: Silicon Complementary Transistor, PNP Transistor Type, 120 V Collector to Emitter Voltage +200 °C maximum operating temperature Complementary silicon epitaxial planer transistors designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.
- Transistor Type / Technology: General Purpose BJT
- Polarity: PNP
- Package Type: Other
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Supplier: Allied Electronics, Inc.
Description: Silicon Transistor, PNP Transistor Type, -200 V Collector to Emitter Voltage -65 to +200 °C operating temperature range High voltage silicon epitaxial planar transistors designed for use in consumer and industrial line-operated applications. Particularly suited as drivers in high-voltage
- Polarity: PNP
- Package Type: Other
- Transistor Type / Technology: General Purpose BJT
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Supplier: Allied Electronics, Inc.
Description: TO-39 Package Type, Small Signal PNP Transistors Silicon planar epitaxial PNP transistors in Jedec TO-39 metal case. They are designed for high speed saturated switching and general purpose applications.
- Polarity: PNP
- Package Type: Other
- Transistor Type / Technology: General Purpose BJT
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Supplier: Allied Electronics, Inc.
Description: Silicon Planar Epitaxial NPN Transistor, 0.6 A Collector Current Silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current
- Transistor Type / Technology: General Purpose BJT
- Polarity: NPN
- Package Type: Other
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Featured Products for Epitaxial Silicon Transistor Top
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American Microsemiconductor, Inc.
LOW NOISE GENERAL PURPOSE
LOW NOISE GENERAL PURPOSE Transistors from American Microsemiconductor. The BC107 and BC108 are silicon planar epitaxial NPN transistors in TO-18 hermetic metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television receivers. Quick Links: Product Specifications and ordering information for the. BC108- LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS. BC108B- NPN Transistor For General Purpose Audio Amplifiers. BC107- LOW NOISE GENERAL... (read more)
Browse Transistors Datasheets for American Microsemiconductor, Inc.
Parts by Number for Epitaxial Silicon Transistor Top
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| MMBT3906-LT1 | ASAP Semiconductor | TRANSISTOR SIEMENS | Not Provided | Transistors Bipolar (BJT) 40V 200mA PNP Epitaxial Silicon Data |
| MPSA25 | ASAP Semiconductor | TRANSISTOR PHILIPS | Not Provided | 40 V, 500 mA, NPN epitaxial silicon darlington transistor TO-92, |
| 2SA564 | ASAP Semiconductor | TRANSISTOR PANASONIC | Not Provided | 2SA564, Silicon PNP epitaxial planar type, TO-92pkg, Panasoni |
| 2SA564A | ASAP Semiconductor | TRANSISTOR PANASONIC | Not Provided | 2SA564, Silicon PNP epitaxial planar type, TO-92, Panasonic |
| KSE340STU | ASAP Semiconductor | FAIRCHILD | Not Provided | NPN Epitaxial Silicon Transistor |
| BFX29 | ASAP Semiconductor | PHILIPS | Not Provided | PNP SILICON EPITAXIAL TRANSISTOR |
Conduct Research Top
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HBT Epitaxial Material Matching and Qualification for High Volume Production
. Microsoft Word - Epi Matching_final.doc HBT Epitaxial Material Matching and Qualification for High Volume Production. Mike Sun, Peter Zampardi, Cristian Cismaru, and Lance Rushing. Skyworks Solutions, Inc., Newbury Park. mike.sun@skyworksinc.com. (805)480-4456. Keywords: HBT, Epitaxy Materials, SIMS
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AN211A: Field Effect Transistors in Theory and Practice, Courtesy of Motorla
. The metal. only. The substrate is of p-type material onto which an n-type. area is the top plate; the substrate material and channel are. channel is grown epitaxially. A p-type gate is then diffused. the bottom plate. into the n-type epitaxial channel. Contact metallization. For the structure of Figure
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Silicon on Sapphire (SOS)
Silicon on sapphire (SOS) is a hetero-epitaxial process wherein a thin layer of silicon is 'grown” on a sapphire (Al2O3) wafer. SOS is part of the silicon on insulator (SOI) family of CMOS technologies. Silicon on sapphire is primarily used in military and space applications because of its inherent
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MICRO: Implementing SiGe technology to produce heterojunction bipolar transistors
Mark D. Dupuis, Stephen St.Onge, Ryan Wuthrich, Heidi L. Greer, Steven S. Williams, Thomas W. Weeks, and William J. Miller, The development of a low-temperature UHV/CVD technique for depositing epitaxial silicon has made it possible to implement high-yield production of SiGe heterojunction bipolar
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Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology
higher than 300°C, significant GaAs. sloped re-entrant profile trenches that are typically formed when. device degradation occurs, where the interface between the typical. epitaxial layers of GaAs are wet-etched due to the GaAs crystal. GaAs contact metals and the GaAs epitaxial layers degrades, as Ga
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High Volume Test Methodology for HBT Device Ruggedness Characterization
Developing rugged transistors requires careful. consideration of the HBT's collector design. In this work. we present a test methodology for high-volume, in-line. measurement of device ruggedness. This method is useful. not only when developing new epitaxial structures for. HBT devices, but also
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MICRO: Best of ASMC- Williams (January 2001)
Randy Williams and Robert Jacques, ; and Mustafa Akbulut and Wayne Chen, A collaborative study that used an advanced unpatterned wafer inspection system found that epitaxial defects and their corresponding impact on device yield varied between wafer suppliers. Silicon wafers with an epitaxially
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TA028: GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost
. MSAG yields, even for very complex chips, are. outstanding. Highly integrated MMIC's (see for example, Figure 7) are routinely. manufactured. The starting wafers for MSAG processing are standard semi insulating 4" diameter wafers. The cost of epitaxial wafers is avoided. The MSAG process features
Engineering Web Search: Epitaxial Silicon Transistor Top
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Transistor - Wikipedia, the free encyclopedia
Transistor From Wikipedia, the free encyclopedia For other uses, see Transistor (disambiguation).
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MOSFET - Wikipedia, the free encyclopedia
The metalâ??oxideâ??semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a transistor used for amplifying or switching electronic
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NPN Silicon Epitaxial Planar Transistor datasheets and...
First line: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE hFE is transistor NPN Silicon Epitaxial Planar Transistor Power Transistor (80V, 0.5A)
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SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE datasheets and...
First line: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE NPN Silicon Epitaxial Planar Transistor Silicon NPN Epitaxial Planar Type 2SD2098 RoHS
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Sam Electronic Circuits - Datasheets
PNP switching transistor 2N3439 NPN SILICON PLANAR EPITAXIAL HIGH VOLTAGE TRANSISTOR [54kb
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NPN Silicon Epitaxial Planar Transistor datasheet and...
First line: Dual PNP Transistor Transistor* npn silicon transistor DATASHEET NPN Silicon Epitaxial Planar Transistor transistor General purpose
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Silicon Controlled Rectifier Manual datasheet and application...
Silicon Controlled Rectifier Manual Datasheet, Circuit, PDF, Cross Reference, & Application Note Results
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Semiconductor: 2SA991 (2SA 991) - PNP SILICON EPITAXIAL...
English in ?: Semiconductor: 2SA991 (2SA 991) - PNP SILICON EPITAXIAL TRANSISTOR...
