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  • Modeling of SOI FET for RF Switch Applications
    This paper presents the modeling of an SOI. FET for RF switch applications. Given that the HF smallsignal. predictability, i.e. the insertion loss and the isolation, is. a common state of the art, the study focuses on the modeling. of the non-linearity of the FET. The non-linearity of an SOI. FET
  • RF/Microwave Solid State Switches
    . will discuss more PIN diode switch configurations,. the theory of operation for. FETs, some representative RF/microwave. FET switch topologies, the relative advantages. of PIN and FET switches and some. criteria by which one of these technologies. may be selected over the other for switch
  • Solid State RF/Microwave Switch Technology: Part 2
    ,. respectively. This switch can handle RF. Figure 8: FET Equivalent Circuits – “On” and “Off” States. power levels up to 6.25 W. done by using a 5 kΩ to 10 kΩ resistor in. A Practical Design Hint. series with the gate of the FET. This is a very. PIN diode circuit performance at RF fre- simple bias network
  • ESD Considerations for SOI Switch Design
    This paper proposes a solution that employs transistor self-conduction and circuit design techniques to improve ESD performance for SOI RF switch applications. The primary limitations and challenges in the ESD design for SOI technology are discussed. The solution enables the switch to pass 8kV IEC
  • A Comprehensive PHEMT Core Model For Switch Applications
    . for switch applications is described. The model combines an. FET. accurate description of CV below pinch-off and a 2D CV. - Accurate modeling of IV around sub-pinch-off region. function above pinch-off for better charge and capacitance. - Accurate modeling of gate leakages and drain-source. modeling
  • Ultra-Miniature High Linearity SPDT Switch for WLAN Applications
    ) switching and power control, which. significantly affect the overall terminal performance. As a key element of the WLAN, the design engineer has no. choice but to hunt for single pole double throw (SPDT) switches with compact size, low cost, and high performance. In the typical RF front end of a WLAN
  • Recent Progress in III-V Devices and Modules for Next Generation Mobile Handsets
    architectures require high performance and/or high. throw count RF switches with stringent requirements for insertion loss, harmonics and inter-modulation performance. at operating frequency bands. High performance RF switches demand optimized FET device topologies to achieve. best-in-class performance
  • Using the TC1142 for Biasing a GaAs Power Amplifier
     below. INTRODUCTION. RF bandwidths for cellular systems such as AMPS, TACS, GSM,. Single Cell Li-Ion Battery and High-Side FET Switch. TDMA, and CDMA range from 800MHz to 1.0GHz. To provide RF. The main power source of this circuit is a single +3.6V Lithium Ion. transmissions over this range