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  • Modeling of SOI FET for RF Switch Applications
    This paper presents the modeling of an SOI. FET for RF switch applications. Given that the HF smallsignal. predictability, i.e. the insertion loss and the isolation, is. a common state of the art, the study focuses on the modeling. of the non-linearity of the FET. The non-linearity of an SOI. FET
  • Distributed Switch FET Model that predicts Better Insertion Loss and Harmonics
    With increasing scale and complexity in phemt switch circuits and dimension shrinking in unit phemt switch devices, distributed effects are becoming crucial on insertion loss and harmonics, especially the second harmonic. Distributed effects of metal resistances and inductances are taken
  • Using the TC1142 for Biasing a GaAs Power Amplifier
    frequency, higher breakdown voltage, lower noise figure, and higher power-added efficiency. This translates to lower power dissipation and longer talk time for cellular subscribers. Single Cell Li-Ion Battery and High-Side FET Switch.
  • RF/Microwave Solid State Switches
    Solid state switches are ubiquitous. in modern RF/microwave systems. They are utilized to control signal. flows, select signal sources and for many. other applications. These switches are. implemented either with positive-intrinsicnegative. (PIN) diodes or with field effect. transistors (FETs
  • Solid State Relays Overview and Applications
    The SSR that NEC has started marketing uses a photocoupler system with a MOS FET, explained in the following, as an output switch and a combination of an Emitter and Photo Detector to drive the switch. NEC's SSR is named a 'OCMOS FET (Opto-Coupled MOS FET)” as the input and output are isolated

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