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  • What is Frequency Domain Analysis?
    of FDA to facilitate understanding the fundamental ideas behind the technique. What is FDA? Frequency-domain analysis (FDA) is a way of processing interferograms to obtain surface profiles. When we say that we are analyzing data in the frequency domain, it means that we are thinking about
  • Fundamentals of High-Frequency CMOS Analog Integrated Circuits
    Fundamentals of High-Frequency CMOS Analog Integrated Circuits. Bridging the gap between fundamental analog electronic circuit textbooks and more advanced RF IC design texts, this book addresses issues that must be taken into account when combining analog and digital circuit building blocks.
  • How High in Frequency Are Accelerometer Measurements Meaningful
    Almost all piezoelectric accelerometers in the current market place. have a fundamental sensor resonance below 100 KHz. In 1983. Endevco Corporation designed a series of MEMS (Micro Electro-. Mechanical Systems) accelerometers [1]. These silicon-based. piezoresistive accelerometers enabled sensor
  • Ultrasonic Cleaning: Fundamental Theory and Application
    The various ultrasonic parameters, or degrees of freedom, available to the process engineer define what the ultimate limits are for the cleaning process. The traditional degrees of freedom available in an ultrasonic cleaning system have included modulation of a single center frequency (sweep
  • Class-F and Inverse Class-F Power Amplifier Loading Networks Design Based upon Transmission Zeros
    at the harmonic frequencies of interest. A two-section impedance matching network is transformed to either a class-F2,3 or inverse class-F2,3 loading network. The manipulation of transistor parasitics is described using network transformations. The resultant loading networks serve as fundamental-frequency
  • UHF Class-E Power Amplifier Based Upon Multi-harmonic Approximation
    for an ideal device resembling true-transient class-E operation at high frequency. Nevertheless, a working prototype presents an efficiency of 85% with 10-W output power at 400-MHz fundamental-frequency using a GaN FET.
  • Intermodulation Distortion in RF Connectors
    Intermodulation distortion occurs when two or more signals occupy the same transmission paths as in full duplex systems. When the signals mix, a non-linear response manifests itself as bi-products of the fundamental frequency called intermodulation distortion or IMD. These unwanted signals
  • Dynamic Testing Uncovers Rheology of Rubber
    of the fundamental frequency at each test condition.

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