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GaAs FET Amplifier
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RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude.
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Supplier: TriQuint Semiconductor, Inc.Description: for WLAN or mobile phone basestations Low Noise Amplifier for basestations and antenna amplifiers
- Transistor Type / Technology: Power MOSFET, Other
- Package Type: Other
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Supplier: Avago TechnologiesDescription: Avago Technologies’s IAM-92516 is a high linearity GaAs FET Mixer using 0.5 µm enhancement mode pHEMT tech- nology. This device houses in Pb-free and Halogen free 16 pins LPCC 3x3[2] plastic package. The IAM-92516 has built-in LO buffer amplifier which requires -3 dBm LO power
- Converter Type: Upconverter / Downconverter
- Applications: Mobile / Wireless Systems
- Technology: Other
- Form Factor: IC Chip
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Supplier: Solid SignalDescription: The TDA-35 series features state of the art, GaAs-Fet Push Pull Hybrids, for improved performance, higher output levels, and better distortion characteristics. ● GaAs-Fet Push Pull Hybrid ● 36 dB Gain ● 1000 MHz Bandwidth
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Supplier: TriQuint Semiconductor, Inc.Description: The ASMA-301 is a 50 Ohm GaAs FET amplifier featuring internal biasing and feedback networks. The ASMA-301 will find application in RF/Microwave systems up to 2.0 GHz requiring superior broadband, high linearity and excellent stability.
- Amplifier Type: Other
- Package Type: Surface Mount Technology (SMT)
- RF Connector: Other
- Nominal Impedance: 50 Ohms
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Supplier: Micronetics, Inc.Description: The SM2022-37RY4 is a GaAs FET amplifier designed for various military and commercial applications. Features: Single DC Supply of +12V Over/Reverse Voltage Protection Thermal Protection with Auto Reset RF Bypass Mode when off Options TTL on/off
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Mobile / Wireless Systems, SATCOM Amplifier
- Package Type: Connectorized
- RF Connector: SMA
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Supplier: Teledyne Cougar, Inc.Description: The 1509 Series is a thin-film GaAs FET RF amplifier for high output power and low noise applications up to 1500 MHz. Low VSWR is maintained by resistive feedback and inductive tuning while the RF is coupled through the amplifier by internal blocking capacitors. The 1509 Series amplifiers
- Amplifier Type: Power Amplifier
- Applications: Military / Defense
- Package Type: Surface Mount Technology (SMT), Through Hole Technology (THT)
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Supplier: Teledyne Cougar, Inc.Description: The 2012 Series is a thin-film GaAs FET RF amplifier using active bias and resistive feedback for stability over temperature and bias voltage variations. Input/output blocking capacitors couple RF through the amplifier while a low VSWR is maintained through inductive tuning. The 2012 Series
- Amplifier Type: Power Amplifier
- Applications: Military / Defense
- Package Type: Surface Mount Technology (SMT), Through Hole Technology (THT)
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Supplier: Avago TechnologiesDescription: Avago’s MGA-71543 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA), which is designed for adaptive CDMA and W-CDMA receiver systems. The MGA-71543 is part of the Avago Technologies com- plete CDMAdvantage RF chipset. The MGA-71543 features a minimum noise figure
- Amplifier Type: Low Noise Amplifier
- MMIC Technology Required: Yes
- Package Type: Surface Mount Technology (SMT)
- Nominal Impedance: 50 Ohms
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Supplier: Micronetics, Inc.Description: Models SM04522-36/36H are 450 to 2200 MHz solid state GaAs FET amplifiers designed for multi-purpose use. With 1.75 GHz of bandwidth, this small amplifier can be used in various applications. This module provides a minimum of +34 dBm of output power at P1dB with an OIP3 of +48 dBm. Two versions
- Product Category: Power Amplifier / SSPA
- Mounting: Rack Mount, Stand Alone
- Connectors / Interfaces: SMA
- Features: Integrated Heatsink
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Supplier: Avago TechnologiesDescription: The Avago AMMC-5024 is a broadband PHEMT GaAs MMIC traveling wave amplifier, TWA, designed for medium output power and high gain over the full 30kHz to 40GHz frequency range. The design employs a 9-stage, cascade-connected FET structure to ensure flat gain and power, as well as uniform group
- Amplifier Type: Other
- Applications: Mobile / Wireless Systems
- MMIC Technology Required: Yes
- Package Type: Other
Featured Products for GaAs FET Amplifier Top
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Avago Technologies' MGA-13316 is a two stage, easy-to-use GaAs MMIC Low Noise Amplifier (LNA). The MGA-13316 LNA has low noise with good input return loss and high linearity achieved through the use of Avago Technologies' proprietary 0.25um GaAs Enhancement-mode pHEMT process. View Data Sheet (PDF). CLICK HERE TO REQUEST A FREE SAMPLE. CLICK HERE FOR QUOTATION (read more)Browse RF Amplifiers Datasheets for Avago Technologies -
TQBiHEMT integrates E/D pHEMT and HBT onto a single chip, thus reducing part count, saving board space and improving overall system costs. This process, well suited for applications with high data rates and frequencies, offers high levels of integration and functionality to accommodate today's increasingly demanding applications. Click here for more information: http://www.tqs.com/prodserv/foundry/docs/TQBiHEMT.pdf (read more)Browse Semiconductor Foundry Services Datasheets for TriQuint Semiconductor, Inc.
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MOS FET Relays from Omron Electronic Components LLC. Perfectly suited for Automated Test Equipment, Medical Equipment, Instrumentation, Security Equipment, Automated Meter Reading, Automotive Diagnostic Equipment, and Communications. Available in 1 and 2-Pole configurations in PCB, SMT, DIP, SOP, and SSOP packaging. Other options include current limiting, high dielectric voltage withstand, normally open and normally closed contact forms, high voltage and current load handling, and high-speed... (read more)Browse Solid State Relays Datasheets for Omron Electronic Components LLC
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The switch is manufactured in a compact, 1 x 1 mm, 6-pin exposed pad plastic Micro Leadframe Package Dual (MLPD) package. Positive voltage control (0 and 1.8 V to 0 and 5.0 V). Broadband frequency range: 2.0-6.0 GHz. Very low insertion loss, 0.35 dB typical @ 2.45 GHz. High isolation, 24 dB typical @ 2.45 GHz. Excellent linearity performance, IP0.5dB = +30 dBm. Ultra-miniature, QFN (6-pin, 1 x 1 mm) package (MSL1, 260 °C per JEDEC J- STD-020) (read more)Browse RF Switches Datasheets for Skyworks Solutions, Inc.
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The SKY13350-385LF is a GaAs pHEMT FET single-pole, doublethrow (SPDT) switch. The switch may be used in transmit/receive applications by connecting the RF common port (INPUT, pin 6) to either the OUTPUT1 or OUTPUT2 port (pin 2 or 4, respectively) using a low loss path (i.e., a positive voltage applied to either VCTL1 or VCTL2 pins). The switch is "reflective short" on the isolated port. The switch is manufactured in a compact, 1 x 1 mm, 6-pin exposed pad plastic Micro Leadframe Package Dual... (read more)Browse RF Switches Datasheets for Skyworks Solutions, Inc.
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Building high performance millimeter wave applications has never been more cost-effective. TQP13-N incorporates optical lithography to greatly reduce the cost of production relative to similar processes based on E-beam gate lithography. Click here for more information: http://www.tqs.com/prodserv/foundry/docs/TQP13-N.pdf (read more)Browse Semiconductor Foundry Services Datasheets for TriQuint Semiconductor, Inc.
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SST210/SD210DE, SST211/SD211DE, SST213/SD213/DE, SST214/SD214DE, SST215/SD215DE - High Speed (2ns), N-Channel Enhancement Mode, Surface Mount, Single, Lateral DMOS FET Switch. Features: Ultra Fast Switching (ton=2ns typ). Low Capacitance (crss= 0.5pf max). Switches Analog Signals up to +/- 10 volts. Designed for High Frequency RF operation. ESD Protection Diodes Versions SST211, SST213, SST215, SD211DE, SD213DE, SD215DE. Non-ESD Protection Diodes Versions SST210, SST214, SD210DE, SD214DE... (read more)Browse IC Analog Switches Datasheets for Linear Integrated Systems, Inc.
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The LM3448 is an adaptive constant off-time AC/DC buck(step-down) constant current LED regulator designed to becompatible with TRIAC dimmers. The LM3448 provides aconstant current for illuminating high power LEDs and includesa phase angle dim decoder. Order a Sample (read more)Browse LED Drivers Datasheets for Texas Instruments High-Performance Analog
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The J-FET (Junction Field Effect Transistor) is a voltage controlled device: that is, a small change in input voltage causes a large change in output current. FET operation involves an electric field which controls the flow of a charge (current) through the device. In contrast with J-FET, a bipolar transistor employs a small input current to control a large output current.The source, drain, and gate terminal of the FET are analogous to the emitter, collector, and base of a bipolar transistor... (read more)Browse Junction Field-Effect Transistors (JFET) Datasheets for American Microsemiconductor, Inc.
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SD5400CY & SD5401CY - High Speed (2ns), N-Channel Enhancement Mode, Surface Mount, Monolithic Quad, Lateral DMOS FET Switch. Features: Ultra Fast Switching (ton=2ns typ). Low Capacitance (crss= 0.5pf max). Switches Analog Signals up to +/- 10 volts. Designed for High Frequency RF operation. ESD protection Diodes. Monolithic Quad. Available in SOIC 14 & 16 lead packages. Also available in Tested Die, PDIP and Sidebraze 16 lead packages. Available with special testing to customer specification... (read more)Browse IC Analog Switches Datasheets for Linear Integrated Systems, Inc.
Conduct Research Top
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M524: Suggested Circuit Controller for a Dual-Control FET VVA in AGC Temp Comp
This application note describes a useful broadband technique of temperature compensation for GaAs FET amplifiers. A control circuit is given for use with M/A-COM's dual bias 20 dB attenuator MMIC. Although the transfer function for attenuator control is non-linear, reasonably good results have been
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Using the TC1142 for Biasing a GaAs Power Amplifier
frequency, higher breakdown voltage, lower noise figure, and higher power-added efficiency. This translates to lower power dissipation and longer talk time for cellular subscribers. Single Cell Li-Ion Battery and High-Side FET Switch. Using the TC1142 for Biasing a GaAs Power Amplifier
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Amplifier Specifications Definitions
and Current Consumption. Addition Specifications. · Gain Variation vs.Temperature. · Overall Gain Window. · Intercept Point. · Dynamic Range. · Harmonic Suppression. · Reverse Isolation. · Phase andAmplitude Matching andTracking. · Phase Linearity. · Recovery from Saturation. GaAs FET AMPLIFIERS
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TA028: GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost
FET noise figure is under 1.5 dB at 18 GHz. Functions that can readily be integrated to form multi-function MMICs are variable gain. amplifiers, microwave switches through Ka band, and mixers through millimeter-wave (e.g.,. IF upconverters, RF downconverters, subharmonically-pumped single-sideband
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Trends in Microwave/Millimeter-Wave Front-End Technology
, linear millimeter-wave power amplifiers for point-to-point radio links, millimeter wave switches using GaAs PIN diodes, and combining GaAs HBT, PHEMT, and VPIN technology in a 77-GHz Tx/Rx front-end for automotive radar. Finally, future GaN HEMT technology is showcased by discrete transistors
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TA047: High Voltage, Low Cost FETs for HPA MMIC Applications
power density at 65 percent poweradded efficiency (PAE) while operating at 14 GHz and 10 V drain voltage. Using this process, the company supplies some of the highest power GaAs MMICs available. The practical power limit for a MSAG high power amplifier (HPA) is set by the ability to implement
Engineering Web Search: GaAs FET Amplifier Top
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Field-effect transistor - Wikipedia, the free encyclopedia
"FET" redirects here. For other uses, see FET (disambiguation).
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Transistor - Wikipedia, the free encyclopedia
3.2 Transistor as an amplifier 4 Comparison with vacuum tubes
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DSpace@MIT : A 8.45 GHz GaAs FET amplifier
A 8.45 GHz GaAs FET amplifier Show full item record A 8.45 GHz GaAs FET amplifier Author: Briancon, Alain Charles Louis.
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Semiconductor Applet Services
Zincblende and Diamond structures ( GaAs, Si, etc.) : unitcell with a list of material property.
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Phase distortion mechanism of a GaAs FET power amplifier for...
Phase distortion mechanism of a GaAs FET power amplifier for digital cellular application
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An 8-12 GHz 1 Watt GaAs FET Amplifier for TWT Replacement
An 8-12 GHz 1 Watt GaAs FET Amplifier for TWT Replacement
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New Japan Radio Co.,Ltd.( New JRC )
GaAs MMICs Amplifier IC ,Switch IC Display drivers J-FET Input High Voltage Comparators Motor ICs
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TriQuint Semiconductor, Inc. - GaAs MMICs
GaAs MESFETs GaAs HFETs + Filters & Duplexers Power Amplifier Modules Variable Gain Amplifiers
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AMCOMUSA - broadband MMICs, amplifier modules, power FETS
35dBm 0.1 - 8GHz GaAs MMIC Power Amplifier (25V) High voltage GaAs power FET (14V or 28V), P1dB up to 39dBm for applications up to 6GHz
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RF Amplifiers | RF/IF ICs | Analog Devices
For all of your amplifier design needs, ADI has the solution.
