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GaAs FET Preamplifier
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Product Announcements
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TriQuint Semiconductor, Inc. 
TriQuint Semiconductor, Inc. 
TriQuint Semiconductor, Inc. 
TriQuint Semiconductor, Inc.
TriQuint Semiconductor, Inc.
TriQuint Semiconductor, Inc. |
Products/Services for GaAs FET Preamplifier
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RF Amplifiers - (518 companies)Depending on load of the output circuit, one or more RF pre-amplifiers may boost the signal and send the stronger output to a RF power amplifier (PA). Other types of RF amplifiers include low noise, pulse, bi-directional, multi-carrier, buffer... Search by Specification | Learn More -
Metal-Oxide Semiconductor FET (MOSFET) - (147 companies)Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Search by Specification | Learn More -
Audio Amplifiers and Preamplifiers - (334 companies)Audio amplifiers and audio preamplifiers are used to increase the amplitude of sound signals. Preamplifiers or preamps are designed to amplify low-level signal from a high-impedance device such as a microphone or instrument pick-up. After... Search by Specification | Learn More -
Transistors - (536 companies)...the channel. The composition of a FET is depicted in the image below. Image Credit: PhysLink.com. In operation, electricity flows through the first semiconductive layer (called the channel). The voltage connected to the second semiconductive layer (the gate... Search by Specification | Learn More -
RF Transistors - (93 companies)RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More -
VME, VPX, and VXI Switches - (15 companies)...that consist of independent, isolated relays or field-effect transistor (FET) switches. They are designed to connect one input to one output. By contrast, multiplexers can connect one input to several outputs, or several inputs to one output. Matrix switches... Search by Specification | Learn More
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CompactPCI Switches and PXI Switches - (21 companies)...in industrial applications. There are three main types of functional topologies for CompactPCI switches and PXI switches, general-purpose switches, multiplexers, and matrices. General-purpose switches consist of independent and isolated relays or FET... Search by Specification | Learn More
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Power MOSFET - (144 companies)MOSFET include TO types, SO types, SOT types, and DPAK, MPAK, MFPAK, CMPAK, CMFPAK, LDPAK, RFPAK, SPAK, and UPAK. The packaging method can be tape reel, rail, bulk pack, tube, and tray. Material choices include silicon, germanium, GaAs, and SiGe. Choices... Search by Specification | Learn More
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Semiconductor Foundry Services - (177 companies)...wafers for many different logic families. Examples include transistor-transistor logic (TTL), Fairchild Advanced Schottky TTL (FAST), emitter coupling logic (ECL), gallium arsenide (GaAs), indium phosphide (InP), silicon on sapphire (SOS) silicon... Search by Specification | Learn More
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Shift Registers - (45 companies)...semiconductor field effect transistors (MOSFETs) to implement logic gates and other digital circuits. Other logic families for shift registers include cross-bar switch technology (CBT), gallium arsenide (GaAs), integrated injection logic (I2L... Search by Specification | Learn More
Product News for GaAs FET Preamplifier
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TriQuint Semiconductor, Inc.
TQBiHEMT GaAs Foundry ProcessTQBiHEMT integrates E/D pHEMT and HBT onto a single chip, thus reducing part count, saving board space and improving overall system costs. This process, well suited for applications with high data rates and frequencies, offers high levels of integration and functionality to accommodate today's increasingly demanding applications. Click here for more information: http://www.tqs.com/prodserv/foundry/docs/TQBiHEMT.pdf (read more) -
Omron Electronic Components LLC
MOS FET RelaysMOS FET Relays from Omron Electronic Components LLC. Perfectly suited for Automated Test Equipment, Medical Equipment, Instrumentation, Security Equipment, Automated Meter Reading, Automotive Diagnostic Equipment, and Communications. Available in 1 and 2-Pole configurations in PCB, SMT, DIP, SOP, and SSOP packaging. Other options include current limiting, high dielectric voltage withstand, normally open and normally closed contact forms, high voltage and current load handling, and high-speed... (read more) -
Skyworks Solutions, Inc.
SKY13366-378LF 2.0–6.0 GHz GaAs SPDT SwitchThe switch is manufactured in a compact, 1 x 1 mm, 6-pin exposed pad plastic Micro Leadframe Package Dual (MLPD) package. Positive voltage control (0 and 1.8 V to 0 and 5.0 V). Broadband frequency range: 2.0-6.0 GHz. Very low insertion loss, 0.35 dB typical @ 2.45 GHz. High isolation, 24 dB typical @ 2.45 GHz. Excellent linearity performance, IP0.5dB = +30 dBm. Ultra-miniature, QFN (6-pin, 1 x 1 mm) package (MSL1, 260 °C per JEDEC J- STD-020) (read more) -
Skyworks Solutions, Inc.
SKY13350-385LF 0.8–6.0 GHz GaAs SPDT SwitchThe SKY13350-385LF is a GaAs pHEMT FET single-pole, doublethrow (SPDT) switch. The switch may be used in transmit/receive applications by connecting the RF common port (INPUT, pin 6) to either the OUTPUT1 or OUTPUT2 port (pin 2 or 4, respectively) using a low loss path (i.e., a positive voltage applied to either VCTL1 or VCTL2 pins). The switch is "reflective short" on the isolated port. The switch is manufactured in a compact, 1 x 1 mm, 6-pin exposed pad plastic Micro Leadframe Package Dual... (read more) -
TriQuint Semiconductor, Inc.
TQP13-N GaAs Foundry ProcessBuilding high performance millimeter wave applications has never been more cost-effective. TQP13-N incorporates optical lithography to greatly reduce the cost of production relative to similar processes based on E-beam gate lithography. Click here for more information: http://www.tqs.com/prodserv/foundry/docs/TQP13-N.pdf (read more)
Engineering Web Search: GaAs FET Preamplifier
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Angle Linear Home Page PHEMTs have replaced GaAs FET devices. PHEMT (pronounced "P" hemt) = Psuedomorphic High Electron Mobility Transistor. |
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PREAMPLIFIER TRANSIMPEDANCE | Datasheets.org.uk - Datasheets... First line: 10Gb PREAMPLIFIER TRANSIMPEDANCE optic fet PREAMPLIFIER TRANSIMPEDANCE GAAS FET AMPLIFIER for optical receiver GAAS FET AMPLIFIER for |
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Microwave GaAs FET catalogue | Datasheets.org.uk - Datasheets... transistor microwave uhf microwave fet A008 Microwave GaAs FET catalogue Abstract: .. Primer 4 ? GaAs FET Characteristic s .. Packaged Microwave |
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23 cm GaAs FET preamplifier 23cm GaAs-FET preamplifier On 23cm the best way to obtain a good RX |
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Ham radio projects by Csaba, YO5OFH 2 Meter GaAs FET Preamp by KD9JQ U310 FET preamplifier 23 cm GaAs FET Preamplifier Generic High Gain 3 Stage IF amplifier |
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A monolithic GaAs FET RF signal generation chip 1980 IEEE International Item Title: A monolithic GaAs FET RF signal generation chip Publisher Name: Institute of Electrical and Electronics Engineers |
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7 GHz bandwidth optical front-end circuit using GaAs FET... front-end circuit using GaAs FET monolithic IC technology Publisher Name: IET Country: UK Issue: 19 Item Abstract: A GaAs FET monolithic integrated |
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ESA Science & Technology: Compounds Under Study The signals are extracted from the lower contact by the pre-amplifier input FET, which is maintained at the detector operating temperature. |
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1 Bandwidth Extension in CMOS with Optimized On-Chip Inductors... Traditionally, this preamplifier has been fabricated in expensive GaAs and silicon bipolar technologies. See Stanford University Information |
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Magazine FUJITSU 2000-5 Issue : ??? Then, this paper describes a high-power GaAs FET output device for base stations which has a low distortion and a saturation output of 150 W. This |
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