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Semiconductors (metalloids) or semiconductor materials are used to fabricate microelectronic and optoelectronic devices such as transistors, photodetectors or solar cells.
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Parts by Number for Gaas MMIC Top

Partb # Distributor Manufacturer Product Category Description
NBB-300-T1 Digi-Key RFMD RF/IF and RFID IC AMP MMIC GAAS 12GHZ 4-MICROX
NBB-400T1 Digi-Key RFMD RF/IF and RFID IC AMP MMIC GAAS 8GHZ 4-MICROX
MGA-14516-BLKG Digi-Key Avago Technologies US Inc. RF/IF and RFID IC AMP LNA GAAS MMIC 16QFN
MGA-81563-TR1 Digi-Key Avago Technologies US Inc. RF/IF and RFID IC AMP MMIC GAAS 3V SOT-363
NLB-400-T1 Digi-Key RFMD RF/IF and RFID IC AMP MMIC GAAS 6GHZ 4-MICROX

Conduct Research Top

  • TA028: GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost
    After some 20+ years of DoD technology development, the commercial wireless market has become the driving force for the GaAs MMIC industry. As the very low-cost requirements of the wireless industry have conflicted with the high-performance process needs and longer time-horizon of the defense
  • AN3007: ESD/EOS Protection for GaAs MMIC Switches
    0402 V05A2 from Inpaq is the ESD over voltage protector. The inductor is shown in Blue and the Inpaq device is shown in Red. The distance change from Version 1 to Version 2 is ~0.5". AN3007.pub Application Note. AN3007. ESD / EOS Protection for GaAs MMIC Switches. Rev. V3. Introduction
  • M515: Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
    The achievable isolation of a GaAs MMIC switch is a function of how low an inductance one can achieve between the ground pad of the MMIC and the ground plane within a particular circuit. The lower the inductance, of course, the higher the isolation that can be achieved. For example, the curves
  • M540: GaAs MMIC Low Noise Amplifiers (SOIC-8 Platform)
    Early in 1994, M/A-COM began offering a family of plastic packaged GaAs MMIC low noise amplifiers (LNAs) featuring single positive supply voltage, low noise figure, high dynamic range, and low power consumption for the high volume commercial wireless communications market. These MMIC LNAs use M
  • M537: GaAs MMIC Based Control Components with Integral Drivers
    This application note describes the fundamental operation and features of a new series of control components. These switches comprise a family of devices that use GaAs FET MMIC technology for the RF circuitry and incorporate application specific integrated circuit (ASIC) technology to realize
  • AN3019: Procedure for Thermal Management of Very High Power GaAs MMICs in Fixtures
    This application note details instructions required for the proper thermal management of M/ACOM very High Power Amplifier die and/or packaged products in M/A-COM provided fixtures (see Figure 1). Proper thermal management is essential for accurate evaluation of the part; and if ignored, will
  • M521: Positive Voltage Control of GaAs MMIC Control Devices
    GaAs control devices have seen a tremendous growth in recent years with M/A-COM being the market leader in this area. The fact that these devices are negative voltage controlled devices has precluded the use of standard low cost CMOS drivers and has forced users to develop hybrid driver circuits
  • M542: Electrical Characterizations of Packages for use with GaAs MMIC Amplifiers
    of the currently available microwave packages in order to identify appropriate packages for our MMIC amplifier products which cover frequencies up to 12 GHz. In addition, the technique has been employed to characterize injection- molded plastic packages and to evaluate nonprobeable MMIC's. Most package

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