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GaAs Precursors
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Products/Services for GaAs Precursors
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Ceramic Powders and Precursors - (197 companies)Ceramic powders and precursors contain oxides, carbides, nitrides, carbon, and other non-metals. They are usually micron or mesh-size in distribution. Ceramic powders, sol-gel solutions and precursors are fabricated through atomization, crushing... Search by Specification | Learn More -
Thin Film Materials - (181 companies)Thin film materials are high purity materials and chemicals such as precursor gases, sputtering targets, or evaporation filaments used to form or modify thin film deposits and substrates. How to Select Thin Film Materials. What Are Thin Film... Search by Specification | Learn More -
Semiconductor Foundry Services - (177 companies)...precursors form deposits of oxides, nitrides, dielectric ceramics or other complex compounds. Screen printing uses a metal paste or ink to form thick-film circuits or interconnects. Dry etching processes such as plasma or reactive ion etching (RIE... Search by Specification | Learn More -
No Image AvailableGlass Powders and Precursors - (12 companies)Glass powders and glass precursors typically consist of oxides with a random, liquid-like or non-crystalline molecular structure. Glass powders and glass precursors are used in a wide variety of applications, so they come in a range of particle... Search by Specification | Learn More
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Thin Film Equipment - (309 companies)...physical vapor deposition (PVD), ion implantation, plasma etching or cleaning, rapid thermal processing (RTP), and vacuum annealing. In chemical vapor deposition (CVD) processes, a precursor gas or mixture of gases is fed into a chamber... Search by Specification | Learn More -
Shift Registers - (45 companies)...semiconductor field effect transistors (MOSFETs) to implement logic gates and other digital circuits. Other logic families for shift registers include cross-bar switch technology (CBT), gallium arsenide (GaAs), integrated injection logic (I2L... Search by Specification | Learn More
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Electronic and Semiconductor Gases - (35 companies)Electronic and semiconductor gases are specialized for microelectronic manufacturing or semiconductor processing applications such as thin film deposition (CVD, PVD), etching, RTP, packaging or soldering. Learn More
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Parity Checkers and Generators - (25 companies)...that combines the high speed of bipolar TTL with the low power consumption of CMOS. Other logic families for parity checkers and generators include cross-bar switch technology (CBT), gallium arsenide (GaAs), integrated injection logic (I2L) and silicon... Search by Specification | Learn More
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Semiconducting Materials - (235 companies)Si) and germanium (Ge), the most common electrical semiconductors, are used in many semiconductor components. Gallium arsenide (GaAs) and indium phosphide (InP) are examples of composite semiconductors that contain added materials or dopants... Learn More
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Flip-Flops - (56 companies)...transistors (MOSFETs) to implement logic gates and other digital circuits. Logic families for flip-flops include cross-bar switch technology (CBT), Gallium arsenide (GaAs), integrated injection logic (I2L) and silicon on sapphire (SOS). Gunning... Search by Specification | Learn More
Product News for GaAs Precursors
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TriQuint Semiconductor, Inc.
TQBiHEMT GaAs Foundry ProcessTQBiHEMT integrates E/D pHEMT and HBT onto a single chip, thus reducing part count, saving board space and improving overall system costs. This process, well suited for applications with high data rates and frequencies, offers high levels of integration and functionality to accommodate today's increasingly demanding applications. Click here for more information: http://www.tqs.com/prodserv/foundry/docs/TQBiHEMT.pdf (read more) -
TriQuint Semiconductor, Inc.
TQP13-N GaAs Foundry ProcessBuilding high performance millimeter wave applications has never been more cost-effective. TQP13-N incorporates optical lithography to greatly reduce the cost of production relative to similar processes based on E-beam gate lithography. Click here for more information: http://www.tqs.com/prodserv/foundry/docs/TQP13-N.pdf (read more) -
Avago Technologies
GaAs MMIC Low Noise Amplifier (LNA)Avago Technologies' MGA-13316 is a two stage, easy-to-use GaAs MMIC Low Noise Amplifier (LNA). The MGA-13316 LNA has low noise with good input return loss and high linearity achieved through the use of Avago Technologies' proprietary 0.25um GaAs Enhancement-mode pHEMT process. View Data Sheet (PDF). CLICK HERE TO REQUEST A FREE SAMPLE. CLICK HERE FOR QUOTATION (read more) -
Skyworks Solutions, Inc.
SKY13366-378LF 2.0–6.0 GHz GaAs SPDT SwitchThe switch is manufactured in a compact, 1 x 1 mm, 6-pin exposed pad plastic Micro Leadframe Package Dual (MLPD) package. Positive voltage control (0 and 1.8 V to 0 and 5.0 V). Broadband frequency range: 2.0-6.0 GHz. Very low insertion loss, 0.35 dB typical @ 2.45 GHz. High isolation, 24 dB typical @ 2.45 GHz. Excellent linearity performance, IP0.5dB = +30 dBm. Ultra-miniature, QFN (6-pin, 1 x 1 mm) package (MSL1, 260 °C per JEDEC J- STD-020) (read more) -
Skyworks Solutions, Inc.
SKY13350-385LF 0.8–6.0 GHz GaAs SPDT SwitchThe SKY13350-385LF is a GaAs pHEMT FET single-pole, doublethrow (SPDT) switch. The switch may be used in transmit/receive applications by connecting the RF common port (INPUT, pin 6) to either the OUTPUT1 or OUTPUT2 port (pin 2 or 4, respectively) using a low loss path (i.e., a positive voltage applied to either VCTL1 or VCTL2 pins). The switch is "reflective short" on the isolated port. The switch is manufactured in a compact, 1 x 1 mm, 6-pin exposed pad plastic Micro Leadframe Package Dual... (read more) -
Real Tech, Inc.
Disinfection By-Products - Precursor MonitoringDisinfection By-Products (DBP) Precursor Monitoring. Chlorine has long been used as a primary disinfection method for many water and wastewater treatment applications. However, there is growing concern about the harmful DBP's produced by the use of chlorine. DBP's, such as triahalomethanes (THMs), can occur when the natural organic matter (NOM) that is present in the water is combined with chlorine. More specifically, the portion of NOM in the water that is aromatic is the most reactive... (read more) -
Avago Technologies
MGA-638P8 Ultra Low Noise, High Linearity LNAAvago Technologies' MGA-638P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has Low Noise and High Linearity achieved through the use of Avago Technologies' proprietary 0.25um GaAs Enhancement-mode pHEMT process. CLICK HERE TO REQUEST A FREE SAMPLE. CLICK HERE FOR QUOTATION. CLICK HERE FOR DATASHEET. CLICK HERE FOR PRODUCT ON AVAGO.COM (read more) -
Avago Technologies
ALM-11036 Tower Mount LNA ModuleAvago Technologies' ALM-11036 is an easy-to-use GaAs MMIC Tower Mount Amplifier (TMA) LNA Module with low insertion loss bypass path. ALM-11036 has low noise and high linearity achieved through the use of Avago Technologies' proprietary 0.25um GaAs Enhancement-mode pHEMT process. CLICK HERE TO REQUEST A FREE SAMPLE. CLICK HERE FOR QUOTATION. CLICK HERE FOR DATASHEET. CLICK HERE FOR PRODUCT ON AVAGO.COM (read more) -
TriQuint Semiconductor, Inc.
New RF Solutions Product GuidesTriQuint recently released several new product guides featuring our innovative RF solutions for GaN RF power and optical products. Our latest EMEA Defense & Aerospace product guide highlights our industry-leading portfolio of GaAs, GaN, SAW & BAW devices. (read more) -
TriQuint Semiconductor, Inc.
Accredited DoD Categroy 1A Trusted FoundryTriQuint Semiconductor, a leading RF product manufacturer and foundry services provider, has been accredited by the Department of Defense (DoD) as a Category 1A 'Trusted Foundry' for its 100mm gallium arsenide (GaAs) facilities in Richardson, TX. Accreditation expands TriQuint's wide-ranging GaAs circuit fabrication capabilities by including classified programs; a Category 1A designation is the highest awarded by the DoD. Quick Links: Process Overview. Prototype Schedules. Documents. Foundry... (read more)
Conduct Research
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MICRO:Semicon Europa 2004
) General Meeting (on invitation). COMPOUND SUBSTRATES. Tuesday, April 20. 2-4 p.m.: Epitaxial Wafer Properties ECV Standards Task Force. 4-6 p.m.: Epitaxial Wafer Properties X-Ray Diffraction Standards Task Force. Wednesday, April 21. 9-11 a.m.: SiC Standards Task Force. 9-11 a.m.: 200-mm GaAs...
Engineering Web Search: GaAs Precursors
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Demonstration of GaInP/GaAs heterojunction bipolar transistors... Demonstration of GaInP/GaAs heterojunction bipolar transistors grown with reduced toxicity all-metalorganic precursors |
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GaAs solar cell with GaInP window grown by all metalorganic... Conference - 1994, 1994 IEEE First World Conference on Item Title: GaAs solar cell with GaInP window grown by all metalorganic source MOVPE Shortened |
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Graphene - Wikipedia, the free encyclopedia |
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english homepage of Markus Pristovsek In-situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in MOVPE M. Pristovsek, M. Zorn, M. Weyers J. |
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Organometallic molecular precursors for low-temperature MOCVD... Organometallic molecular precursors for low-temperature MOCVD of III-V semiconductors (Proceedings Paper) |
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Growth of BxGa1-xAs, BxAl1-xAs and BxGa1-x-yInyAs epilayers on... 10- period BGaAs(10nm)/GaAs(50nm) and BGaInAs(10nm)/GaAs(50nm) have been successfully grown on exactly-oriented (001)GaAs substrates by low-pressure |
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Surface characterization of epitaxial lateral overgrowth of... Surface characterization of epitaxial lateral overgrowth of InP on InP/GaAs substrate by MOCVD |
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Interfaces of high-k dielectrics on GaAs: Their common... Title: Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper) Authors: Matty |
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ACS CINF: Computer Searching of Chemical Abstracts: Display... Group III-V semiconductors or their precursors. GaP, GaAs, GaSb, InP, InAs and InSb after refluxing reaction mixts. |
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FAST PHOTOCONDUCTIVE MATERIALS FOR WIDEBAND A/D CONVERSION AND... |
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