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Part # Distributor Manufacturer Product Category Description
MA4CS102A287 ASAP Semiconductor GALLIUM Not Provided our stock ! New parts

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  • Gallium Arsenide (GaAs)
    Gallium arsenide (GaAs) is a semiconductor compound which combinews the strength of two elements: gallium (Ga) and arsenic (As). Gallium is a byproduct of the smelting of other metals, notably aluminum and zinc, and is rarer than gold. Arsenic is not rare, but is poisonous. Gallium arsenide is used
  • Sustainability of Indium and Gallium Supplies in the Face of Emerging Markets (.pdf)
    The elements indium and gallium are key components in the manufacture of products in high volume emerging markets. The strategic nature of these elements, coupled with some published reports concerning shortages, has raised some legitimate questions about the sustainability of their supply chains
  • Availability of Indium and Gallium
    During 2010, Indium production. continued steadily at a rate of about 500. metric tonnes (mt) per year. Production. could have been expanded, had there. been a need for higher quantities.
  • GaAs FETs as Control Devices
    Gallium arsenide MESFETs are being used in RF control. device applications as switches and attenuators.They are. very easily adapted to monolithic circuit form, dissipate. essentially no power and can easily be designed into. broadband circuits. APN2015.qxd GaAs FETs as Control Devices
  • Characterization of Reed Relays Capable of Handling Frequencies up to 10 GHz (.pdf)
    For years engineers had thought the best way to switch high frequencies and very short fast digital pulses was to use special semiconductors designed to handle the high frequencies - namely gallium arsenide mosfets. Today, however, gallium arsenide is not the only option; new semiconductor
  • Analogue IC Design: The Current-Mode Approach
    Analogue IC Design: The Current-Mode Approach. This book draws upon contributions from the world's most eminent analogue IC designers to discuss the "true" complementary bipolar process, CMOS VLSI technology, and gallium arsenide processing, with key building blocks, circuit designs
  • Using the TC1142 for Biasing a GaAs Power Amplifier
    RF bandwidths for cellular systems such as AMPS, TACS, GSM, TDMA, and CDMA range from 800MHz to 1.0GHz. To provide RF transmissions over this range of frequencies, Gallium Arsenide (GaAs) has become the technology of choice and offers several advantages over silicon technology: a much higher cutoff
  • Laser Scribing Thin Film Molybdenum for Photovoltaic Cells
    . Of the major types of thin film solar cells, one of the most widely exploited to date is based on a CIGS (Copper Indium Gallium diSelenide) active layer. These cells typically use a thin layer of molybdenum as a back contact layer deposited directly onto the glass. Laser scribing or 'cutting

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