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Gallium Arsenide Precursor
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Products/Services for Gallium Arsenide Precursor
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Ceramic Powders and Precursors - (197 companies)Ceramic powders and precursors contain oxides, carbides, nitrides, carbon, and other non-metals. They are usually micron or mesh-size in distribution. Ceramic powders, sol-gel solutions and precursors are fabricated through atomization, crushing, milling, precipitation, and other chemical processes. Search by Specification | Learn More -
Thin Film Equipment - (309 companies)...physical vapor deposition (PVD), ion implantation, plasma etching or cleaning, rapid thermal processing (RTP), and vacuum annealing. In chemical vapor deposition (CVD) processes, a precursor gas or mixture of gases is fed into a chamber... Search by Specification | Learn More -
Semiconducting Materials - (235 companies)Si) and germanium (Ge), the most common electrical semiconductors, are used in many semiconductor components. Gallium arsenide (GaAs) and indium phosphide (InP) are examples of composite semiconductors that contain added materials or dopants... Learn More -
Thin Film Materials - (181 companies)Thin film materials are high purity materials and chemicals such as precursor gases, sputtering targets, or evaporation filaments used to form or modify thin film deposits and substrates. How to Select Thin Film Materials. What Are Thin Film... Search by Specification | Learn More -
No Image AvailableGlass Powders and Precursors - (12 companies)Glass powders and glass precursors typically consist of oxides with a random, liquid-like or non-crystalline molecular structure. Glass powders and glass precursors are used in a wide variety of applications, so they come in a range of particle sizes and particle distributions. Search by Specification | Learn More
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Nanomaterials - (266 companies)...is a process in which chemicals react to produce very pure, high-performance films. CVD involves flowing a precursor gas or gasses into a chamber containing one or more heated objects to be coated. A chemical reaction occurs on or near the heated surfaces... Search by Specification | Learn More
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RF Transistors - (93 companies)RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More
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Thin Film Sources - (81 companies)Thin film sources consist of magnetrons, evaporation thermal units, ion beams and other sources that produce deposition materials (vapors or ions) in a thin film system. Learn More
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Electronic and Semiconductor Gases - (35 companies)Electronic and semiconductor gases are specialized for microelectronic manufacturing or semiconductor processing applications such as thin film deposition (CVD, PVD), etching, RTP, packaging or soldering. Learn More
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Materials Processing Services - (322 companies)Materials processing services mechanically or thermally process metals, thermal ceramics, polymers, glasses and other materials on a contract basis. Search by Specification | Learn More
Product News for Gallium Arsenide Precursor
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Real Tech, Inc.
Disinfection By-Products - Precursor MonitoringDisinfection By-Products (DBP) Precursor Monitoring. Chlorine has long been used as a primary disinfection method for many water and wastewater treatment applications. However, there is growing concern about the harmful DBP's produced by the use of chlorine. DBP's, such as triahalomethanes (THMs), can occur when the natural organic matter (NOM) that is present in the water is combined with chlorine. More specifically, the portion of NOM in the water that is aromatic is the most reactive... (read more)Browse Water Quality Testing Instruments Datasheets for Real Tech, Inc. -
Hamamatsu Corporation USA
Solid State DivisionHamamatsu designs and manufactures a wide range of solid state detectors, imaging chips and light sources. The range of materials from which our products are made include Silicon (Si), Indium Gallium Arsenide (InGaAs), Gallium Arsenide (GaAs), Mercury Cadmium Telluride (HgCdTe) and Indium Antinomide (InAs). Many of these are available both as point and imaging detectors. We integrate photodiode arrays with CMOS multiplexers to improve performance and reduce your design time. Solid state... (read more)Browse Photodiodes Datasheets for Hamamatsu Corporation USA -
Advanced Photonix, Inc.®
InGaAs PhotodetectorsIndium Gallium Arsenide (InGaAs) PIN photodiodes are detectors with a spectral response range of 0.9 µm – 1.7 µm, deliver high-speed response and low noise due to a low terminal capacitance and a large shunt resistance. In addition to these larger active devices, API also offers a wide range of high-speed (10 Gbit – 40 Gbit) InGaAs fiber coupled receivers through our Picometrix subsidiary (see III-V Optical Receivers). Picometrix is the world's leader in providing high performance... (read more) -
Infrared Cameras Inc.
Alpha Near Infrared (NIR) InGaAs CameraNIR Near Infrared InGaAs Thermal Imager. The ICI NIR (Near Infrared) infrared camera employs a 320 x 256 Indium Gallium Arsenide (InGaAs) focal plane array, allowing the thermal imaging camera to be highly sensitive to energy in the near-infrared (NIR) and shortwave infrared (SWIR) wavebands from 0.9 to 1.7 microns, well beyond the range of silicon CCD cameras. The ICI NIR is suited for detection of telecommunication laser radiation, particularly in the S, C, and L DWDM wavebands. Other users... (read more)Browse Thermal Imagers Datasheets for Infrared Cameras Inc. -
TriQuint Semiconductor, Inc.
Accredited DoD Categroy 1A Trusted FoundryTriQuint Semiconductor, a leading RF product manufacturer and foundry services provider, has been accredited by the Department of Defense (DoD) as a Category 1A 'Trusted Foundry' for its 100mm gallium arsenide (GaAs) facilities in Richardson, TX. Accreditation expands TriQuint's wide-ranging GaAs circuit fabrication capabilities by including classified programs; a Category 1A designation is the highest awarded by the DoD. Quick Links: Process Overview. Prototype Schedules. Documents. Foundry... (read more)
Conduct Research
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MICRO: Product Extra
, the real-time monitoring tool provides simultaneous reflectivity measurements of film-growth characteristics. Ripple technology offers good precision in temperature measurements over a range of 400 to 1600 C, making the EpiTUNE II suitable for GaN, gallium arsenide, indium phosphide, and other III-V...
Engineering Web Search: Gallium Arsenide Precursor
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Thin film - Wikipedia, the free encyclopedia Compounds such as gallium arsenide are usually deposited by repeatedly applying a layer of one element (i.e., gallium), then a layer of the other |
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Fiber-optic communication - Wikipedia, the free encyclopedia Communications LEDs are most commonly made from gallium arsenide phosphide (GaAsP) or gallium arsenide (GaAs). Because GaAsP LEDs operate at a longer |
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Progress in microwave GaN HEMT grown by MBE on silicon and... European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005 Conference Title: 2005 13th European Gallium Arsenide and other |
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Optimal design and operation of a multiscale GaAs/AlAs... Abstract: We consider optimal operating conditions of a gallium arsenide/aluminum arsenide (GaAs/AlAs) deposition process with objectives of uniform |
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Novel gallium arsenide precursor and low temperature method... US PATENT: Novel gallium arsenide precursor and low temperature method of preparing gallium arsenide therefrom |
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Advanced Processes and Materials at 32nm and 22nm Featured at... See Semiconductor Equipment and Materials International (SEMI) Information |
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10.1117/2.1200909.1776 Process to grow nanowires controls key... Aluminum, gallium, To grow GaAs nanowires, Ga and As are provided as gas-phase and indium are group III elements, while nitrogen, phosphorus, |
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Bright Outlook For LED Precursor | Cover Story | Chemical... TMG is also a precursor for gallium arsenide (GaAs) semiconductors that end up in lasers, photovoltaic cells, and telecommunication devices. See Chemical & Engineering News Information |
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Nanoengineering — UCLA Chemical and Biomolecular... Using this method, a cluster model for a gallium arsenide surface has been developed, which identified all the reaction sites on the surface as being |
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Dr. Hicks' Lab - Chemical Vapor Deposition compound semiconductor devices, which consist of thin films of gallium arsenide, indium phosphide and other alloys of the group III and V elements of |
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