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Description: Gallium is a by-product of aluminum extracted during the processing of bauxite into alumina. It can also occasionally be found in Zn ore. We are a refiner and supplier of gallium materials. Indium Corporation supplies gallium: in the form of shot and ingot, in the form of sputtering targets, after
- Metal / Alloy Types: Specialty / Other Alloy
- Shape / Form: Semi-finished Shape / Mill Stock, Ingot, Other
- Applications: Other
Description: Indium metal has played a key role in technology advances since it was first investigated by Dr. William S. Murray in 1924 in Utica, NY, and with the creation of the Indium Corporation in 1934, the two have been tied together, leading, and supporting the advancement of technologies that we all rely
- Metal / Alloy Types: Indium / Indium Alloys
- Shape / Form: Semi-finished Shape / Mill Stock, Ingot
- Applications: Other
Description: Gallium trichloride (GaCl3) dissolves in virtually all solvents and thus is the ideal precursor for gallium derivatives: Gallium trichloride is the starting material for making gallium-based metal-organic precursors. Tri-methyl gallium (TMG) is the material of choice for MOCVD deposition processes
- Ionic Component: Metalloids (B, Si, Ge, etc.)
- Halogenated Compounds: All Halogens, Chlorides
- State of Matter: Powder
- Purity: 99.5 to 100 %
Light Emitting Diodes (LED) - SE2470 Series AlGaAs Infrared Emitting Diode, Miniature Hermetically Sealed Metal Pill Style -- SE2470-002Supplier: Honeywell Sensing and Control
Description: The SE2470 is a high intensity aluminum gallium arsenide infrared emitting diode mounted in a hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards. These devices typically exhibit 70% greater power intensity than gallium arsenide devices
- Color: Infrared
- Peak Wavelength: 880 nm
- Forward Voltage: 1.8 volts
- Forward Current: 0.0500 amps
Supplier: ASTM International
Description: for subsequent measurement in a luminum alloys is to fatigue cycle after initial static crack extension. In this paper, a new technique for marking crack fronts in aluminum alloys is described. This new technique, based on liquid metal embrittlement of grain boundaries in aluminum by gallium, is, for the alloysShow More
Supplier: OSI Optoelectronics
Description: FCI-InGaAs-XXX-WCER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm are part of a line of monitor photodiodes mounted on metallized ceramic substrates. These compact assemblies are designed for ease of integration. The chips can be epoxy or Eutectic mounted onto the ceramic substrate.
- PN, PIN, or Avalanche: PIN Photodiode
- Spectral Response: IR
- Sensitivity: 0.9500 A/W
- Spectral Response Range: 900 to 1700 nm
Supplier: Pfaltz & Bauer, Inc.
Description: Gallium metal semiconductor grade 99.9999%Show More
Supplier: Isotech North America
Description: No Description Provided
- Calibrator Style: Portable
- Process, Environmental, Thermodynamic Properties: Temperature, RTD, Thermistor, Thermocouple
Supplier: Micropac Industries, Inc.
Description: A Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22, 4N23 and 4N24’s can be tested to customer specifications. Features: • Qualified to MIL-PRF-19500/486 • Collector in electrical
- Optocoupler Input: DC
- Optocoupler Output: Phototransistor
- Isolation Voltage: 1000 volts
- Rise Time: 2.50E-7 minutes
Supplier: KLA-Tencor Corporation
Description: The Candela® 8620 substrate and epitaxy (epi) wafer inspection system is designed for LED device manufacturers to provide automated defect inspection for LED materials such as gallium nitride, sapphire, and silicon carbide—enabling enhanced quality control of both opaque and transparent
- Form Factor: Wafer Probing System
- Mounting / Loading: Floor Mounted / Stand-alone
- Applications: Semiconductor Wafers
- Measurement Capability: Defects / ADC
Supplier: Aremco Products, Inc.
Description: Aremco offers a wide range of high purity metals and ceramics that are applicable to scientists and engineers involved in basic research and applied product development.
- Inorganic Compounds: Other
- Ionic Component: Other Metals (Al, In, Sn, Pb, etc.)
- State of Matter: Powder
Supplier: Materion Corporation
Description: Pure Metals Aluminum, Al Neodymium, Nd Antimony, Sb Nickel, Ni Beryllium, Be Niobium, Nb Bismuth, Bi Osmium, Os Boron, B Palladium, Pd Cadmium, Cd Platinum, Pt Calcium, Ca Praseodymium, Pr Carbon, C Rhenium, Re Cerium, Ce Rhodium, Rh Chromium, Cr Ruthenium, Ru Cobalt, Co Samarium, Sm
- Applications: Electronics / RF-Microwave
- Nonferrous Metals: Non-ferrous - Any Type, Aluminum / Aluminum Alloy (UNS A), Cobalt / Cobalt Alloy, Copper, Brass or Bronze Alloy (UNS C), Magnesium / Magnesium Alloy (UNS M), Nickel / Nickel Alloy (UNS N), Noble / Precious Metal (UNS P), Refractory / Reactive (UNS R), Titanium / Titanium
- Pure / Very Low Alloy: Yes
- Shape / Form: Semi-finished Shape / Mill Stock
Supplier: Innovative Lab Supply
Description: InLabSupply HC metal-vapor discharge single element hollow cathode lamps (HCL) are specifically developed for Atomic Absorption Spectroscopy. Quality controlled manufacturing ensure that InLabSupply Hollow Cathode Lamps meet or exceed the specified requirements for most commercial atomic
- Lamp Type: Spectral Lamps
- Maximum Overall Length: 6.3 inch
Supplier: StellarNet, Inc.
Description: as well as maintaining production costs. Films include active layers such as thin silicon, II-IV materials such as CdTe, and CIGS (copper indium gallium selenide). Additionally, TCO (transparent conductive oxide) stacks, polyimides and resists used to define cells and electrodes, as well
- Form Factor: Monitor / Instrument
- Mounting / Loading: In-situ / System Mounted
- Applications: Semiconductor Wafers, CVD / PVD Films, Data Storage / Memory, Flat Panel Displays, Optical Components , Polishing / CMP, Polymers / Photoresists, Other
- Measurement Capability: Thickness - Film / Layer, Thickness - Wafer / Disc (TTV)
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Gallium Trichloride, Anhydrous
Indium Corporation - Gallium trichloride (GaCl3) dissolves in virtually all solvents and thus is the ideal precursor for gallium derivatives: Gallium trichloride is the starting material for making gallium-based metal-organic precursors. Tri-methyl gallium (TMG) is the material of choice for MOCVD deposition processes of gallium that are widely used in the compound semiconductor component and LED industries. Gallium trichloride is a clear or white material with needle shaped crystal... (read more)
Browse Inorganic Chemicals and Compounds Datasheets for Indium Corporation
American Microsemiconductor, Inc.
Need specifications? Call us for immediate help.
American Microsemiconductor has been supplying signal diodes and power rectifiers to the electronic component and board level repair markets for over 40 years. Take advantage of our experience and expertise by calling us with your design requirements. We supply general purpose, fast switching, high voltage, schottky, germanium , selenium, silicon, silicon carbide rectifiers/diodes, and ask us about our gallium arsenide and gallium nitride semiconductors. Our... (read more)
Browse Rectifiers Datasheets for American Microsemiconductor, Inc.
H.C. Starck Inc. - Fabricated Products Group
Semiconductor Materials for Thermal Management
nitride, gallium arsenide, Kovar ®, alumina and beryllia. Nickel / Molybdenum / Nickel Laminates. These Ni / Mo / Ni laminates are differentiated from the Cu / Mo / Cu laminates when used in higher temperature processing, such as brazing, where superior adhesion characteristics are required. Composite Products. Advancements in electronic controls in high power equipment have resulted in specific demands on the packaging materials. Molybdenum and metal-metal matrix composites materials... (read more)
Browse Semiconducting Materials Datasheets for H.C. Starck Inc. - Fabricated Products Group
Conduct Research Top
Effects of Ohmic Metal on Electrochemical Etching of GaAs in pHEMT Manufacturing
Good ohmic metal contact is crucial for optimum device. performance for Heterojunction Bipolar Transistors (HBT). and pseudomorphic High Electron Mobility Transistors. (pHEMT). Erosion of Gallium Arsenide (GaAs) adjacent to. ohmic structure is a common problem and it is generally. observed
RF Power: GaN Moves In for the Kill
Is gallium nitride (GaN) the wide bandgap material that will turn RF power generation on its head and relegate gallium arsenide (GaAs) and LDMOS (Laterally Diffused Metal Oxide Semiconductor) to the annals of history? Well you'd certainly think so, based on articles in the trade press, symposium
MICRO: Industry News
, are just one of the many optoelectronic and microelectronic RF, microwave, laser, and communications devices made by compound semiconductor manufacturers that use metal-organic chemical vapor deposition (MOCVD) equipment from Veeco and other suppliers. Comparison with the well-established silicon side
Society for Information Display News Stories March 2001
Semiconductive "Nanobelts " Could One-Up Nanotubes as FED Emitters Atlanta, Georgia, March 9 - Researchers have created a new type of nanometer-scale structure that could be the basis for inexpensive ultra-small sensors and flat-panel-display components. Made of semiconducting metal oxides
MICRO: Wet Surface Technology
/oxidation, preepitaxial deposition, post-laser-marking applications, and post chemical-mechanical polishing (CMP) cleaning operations, ultradilute cleaning chemistries are highly efficient at removing submicron surface contamination and trace metallic impurities. Such chemistries reduce metal
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2.2 Gallium metal and Li-Ga alloy ...........................................
Compatibility of ITER candidate structural materials with static gallium
The specimen developed a very porous and thick reaction layer that was identified by XRD analysis as FeGa3, with gallium metal present .
Focused ion beam technology: a bibliography
Barr D L, Thomson D J and Brown W L 1988 A study of time and angle correlations in the ion emission from gallium metal ion sources J. Vacuum Sci. Technol.
Patty's Toxicology 6 Volume Set (with Index) 6th Edition
GALLIUM AND GALLIUM COMPOUNDS 1.0 Gallium 1.0.1 CAS Number [7440-55-3] 1.0.2 Synonym Gallium metal .
Fusion reactor materials semiannual progress report for the period ending March 31, 1993
The specimen develops a very porous and thick reac- tion layer that X-ray diffraction analysis reveals to be FeGa3, with gallium metal present in the pores.
Liquid metal cooling in thermal management of computer chips
Liquid gallium metal cooling for optical elements with high heat loads.
Solvothermal Oxidation of Gallium Metal in the Various Organic Solvents…………………………………………117 .
Self‐seeding gallium oxide nanowire growth by pulsed chemical vapor deposition
A new heteroleptic gallium (III) alkyl amidinate [monoacetamidinatodiethylgallium(III), compound 1] was found to undergo self‐seeding pulsed chemical vapor deposition (p‐CVD) to gallium metal above temperatures of 450 °C.
Gallium-based thermal interface material with high compliance and wettability
Abstract This study reports a gallium-based thermal inter- face material (GBTIM) consisting of gallium oxides dis- persed uniformly into the 99 % gallium metal .
Reduction of Digallane [(dpp‐bian)GaGa(dpp‐bian)] with Group 1 and 2 Metals
Gallium dreams: [(dpp‐bian)GaGa(dpp‐bian)] (1; dpp‐bian=1,2‐bis[(2,6‐diisopropylphenyl)imino]acenaphthene), a compound with a gallium–gallium bond, has been prepared in one step starting from gallium metal .
Preparation of high-purity gallium from semiconductor fabrication waste
After Ga(OH)3 separa- tion from the reaction system and electroreduction to gallium metal in an alkaline electrolyte, the gallium loss was 0.1−0.2 wt %.