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  • Gallium Arsenide (GaAs)
    Gallium arsenide (GaAs) is a semiconductor compound which combinews the strength of two elements: gallium (Ga) and arsenic (As). Gallium is a byproduct of the smelting of other metals, notably aluminum and zinc, and is rarer than gold. Arsenic is not rare, but is poisonous. Gallium arsenide is used
  • Effects of Ohmic Metal on Electrochemical Etching of GaAs in pHEMT Manufacturing
    Good ohmic metal contact is crucial for optimum device. performance for Heterojunction Bipolar Transistors (HBT). and pseudomorphic High Electron Mobility Transistors. (pHEMT). Erosion of Gallium Arsenide (GaAs) adjacent to. ohmic structure is a common problem and it is generally. observed
  • Beryllia
    materials. Beryllia provides a thermal coefficient of expansion (TCE) intermediate to gallium arsenide and refractory metal composites, as well as low dielectric constant (6.7) and low loss index (0.0012 at 1 MHz), permitting improved circuit performance at high frequencies. Unlike nitrides, which
  • MICRO: Industry News
    diverges, though, on everything from wafer size, to integration issues, and defect concerns. When dealing with the predominating sapphire and gallium-arsenide (GaAs) substrates and others made from materials such as gallium nitride (GaN) and indium phosphide (InP), Chase learned that the small
  • Society for Information Display News Stories March 2001
    nanobelts from oxides of zinc, tin, indium, cadmium, and gallium. This family of materials was chosen because they are transparent semiconductive oxides. Nanobelts may not have the high structural strength of cylindrical carbon nanotubes, but make up for that with a uniformity that could make them
  • MICRO: Wet Surface Technology
    and surface haze from silicon wafer substrates. The experiments were conducted at M/A-Com (Burlington, MA), which manufactures radio-frequency (RF) microwave devices using silicon and gallium arsenide processes. The chemistry in question was ultradilute RCA-SC-1 followed by RCA-SC-2

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