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  • Effects of Ohmic Metal on Electrochemical Etching of GaAs in pHEMT Manufacturing
    Good ohmic metal contact is crucial for optimum device. performance for Heterojunction Bipolar Transistors (HBT). and pseudomorphic High Electron Mobility Transistors. (pHEMT). Erosion of Gallium Arsenide (GaAs) adjacent to. ohmic structure is a common problem and it is generally. observed
  • RF Power: GaN Moves In for the Kill
    Is gallium nitride (GaN) the wide bandgap material that will turn RF power generation on its head and relegate gallium arsenide (GaAs) and LDMOS (Laterally Diffused Metal Oxide Semiconductor) to the annals of history? Well you'd certainly think so, based on articles in the trade press, symposium
  • MICRO: Industry News
    diverges, though, on everything from wafer size, to integration issues, and defect concerns. When dealing with the predominating sapphire and gallium-arsenide (GaAs) substrates and others made from materials such as gallium nitride (GaN) and indium phosphide (InP), Chase learned that the small
  • Society for Information Display News Stories March 2001
    nanobelts from oxides of zinc, tin, indium, cadmium, and gallium. This family of materials was chosen because they are transparent semiconductive oxides. Nanobelts may not have the high structural strength of cylindrical carbon nanotubes, but make up for that with a uniformity that could make them
  • MICRO: Wet Surface Technology
    and surface haze from silicon wafer substrates. The experiments were conducted at M/A-Com (Burlington, MA), which manufactures radio-frequency (RF) microwave devices using silicon and gallium arsenide processes. The chemistry in question was ultradilute RCA-SC-1 followed by RCA-SC-2

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