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  • Gallium Arsenide (GaAs)
    Gallium arsenide (GaAs) is a semiconductor compound which combinews the strength of two elements: gallium (Ga) and arsenic (As). Gallium is a byproduct of the smelting of other metals, notably aluminum and zinc, and is rarer than gold. Arsenic is not rare, but is poisonous. Gallium arsenide is used
  • Sustainability of Indium and Gallium Supplies in the Face of Emerging Markets (.pdf)
    thin-film solar. for the manufacturing, reclaiming,. targets, that supply the transparent. panels. Using roughly equal parts of. and sales of high purity metals and. conductive coatings for FPDs. Gallium. copper, indium, and gallium, the CIGS. chemicals. She covers the Asian and. is used for indium
  • What Are Refractory Metals?
    including sodium, mercury, gallium, and magnesium;. to oxide ceramics such as alumina, magnesia, zirconia and thoria. It is often used for crucibles to melt these. materials in an inert atmosphere. Although resistant to hydrogen, tungsten reacts at high temperatures with. carbon dioxide, carbon monoxide
  • Effects of Ohmic Metal on Electrochemical Etching of GaAs in pHEMT Manufacturing
    Good ohmic metal contact is crucial for optimum device. performance for Heterojunction Bipolar Transistors (HBT). and pseudomorphic High Electron Mobility Transistors. (pHEMT). Erosion of Gallium Arsenide (GaAs) adjacent to. ohmic structure is a common problem and it is generally. observed
  • Laser Scribing Thin Film Molybdenum for Photovoltaic Cells
    . Of the major types of thin film solar cells, one of the most widely exploited to date is based on a CIGS (Copper Indium Gallium diSelenide) active layer. These cells typically use a thin layer of molybdenum as a back contact layer deposited directly onto the glass. Laser scribing or 'cutting
  • Beryllia
    materials. Beryllia provides a thermal coefficient of expansion (TCE) intermediate to gallium arsenide and refractory metal composites, as well as low dielectric constant (6.7) and low loss index (0.0012 at 1 MHz), permitting improved circuit performance at high frequencies. Unlike nitrides, which
  • MICRO: Industry News
    diverges, though, on everything from wafer size, to integration issues, and defect concerns. When dealing with the predominating sapphire and gallium-arsenide (GaAs) substrates and others made from materials such as gallium nitride (GaN) and indium phosphide (InP), Chase learned that the small
  • Society for Information Display News Stories March 2001
    nanobelts from oxides of zinc, tin, indium, cadmium, and gallium. This family of materials was chosen because they are transparent semiconductive oxides. Nanobelts may not have the high structural strength of cylindrical carbon nanotubes, but make up for that with a uniformity that could make them

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