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Welcome to GlobalSpec - a trusted source for engineers and industrial professionals.
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GaN Aggregates
-related products, suppliers, datasheets and CAD.|
Product Announcements
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Hitachi Metals America, Ltd. 
TPL, Inc. 
Saint-Gobain Innovative Materials 
TPL, Inc.
Saint-Gobain Coating Solutions
Saint-Gobain NorPro |
Products/Services for GaN Aggregates
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Ceramic Powders and Precursors - (197 companies)Ceramic powders and precursors contain oxides, carbides, nitrides, carbon, and other non-metals. They are usually micron or mesh-size in distribution. Ceramic powders, sol-gel solutions and precursors are fabricated through atomization, crushing, milling, precipitation, and other chemical processes. Search by Specification | Learn More -
Minerals, Aggregates, and Sands - (267 companies)...including the manufacture of steel, iron and glass materials. Minerals, aggregates and sands include construction aggregates composed of limestone that are used as road stone and drainage stone. Aggregate materials are irregularly-shaped fragments... Learn More -
Refractory Cements and Raw Materials - (146 companies)Refractory cements and raw materials consist of castables, rams, aggregates and binders that are resistant to high temperatures. Refractory Cements and Raw Materials Information. Refractory cements and raw materials are hard, heat resistant... Search by Specification | Learn More -
Cement, Concrete, and Mortar - (550 companies)Cement, concrete and mortar are polymer or cement-based binders, compounds or aggregate mixtures for joining components and forming structures. Although the words concrete and cement are often used interchangeably, cement is actually an ingredient... Search by Specification | Learn More -
No Image AvailableCement Boards - (12 companies)Cement boards are combinations of cement, glass, aggregate, and fiber reinforcements that are formed into sheets and used as tile backing boards, and to build wall or floors. Cement boards are combinations of cement, glass, aggregate, and fiber... Search by Specification | Learn More
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Polymer Concrete and Mortar - (126 companies)Polymer Concrete and Mortar Information. Polymer concrete and mortar are binders, compounds, and aggregate mixtures that use epoxy, polyester, vinyl ester or other polymer resin bonds. They cure or set through chemical reactions, thermoset bonds... Search by Specification | Learn More
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Precast Concrete Products - (119 companies)...products are made from precast concrete, typically a mixture of Portland cement and aggregate materials. Portland cement, the world 's most commonly used cement, is a hydraulic material that consists of calcium silicates and a clinker. Aggregates... Search by Specification | Learn More
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Concrete Mixers - (83 companies)Concrete mixers are used to mix concrete during the processing of water, cement and aggregate media, or during the delivery and final pour preparation. These mixers use a motor, a revolving drum, and a chute to mix the components homogeneously... Learn More
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RF Transistors - (93 companies)RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More
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Asphalt Testing Equipment - (31 companies)Asphalt test equipment includes specialized testers, instruments and devices for evaluating the properties of asphalt or other types of pavement materials. Learn More
Product News for GaN Aggregates
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TriQuint Semiconductor, Inc.
Newest GaN devicesTriQuint has four new high-power switches that set a performance standard for solid-state switching-TriQuint's GaN devices handle up to 40W CW input power, a performance level previously available only from electromechanical solutions that are substantially larger, heavier and less efficient. For details, please visit TriQuint's website. TGS2351 DC - 6 GHz High Power GaN SPDT Switch. TGS2351-SM DC - 6 GHz High Power GaN SPDT Switch. TGS2352 DC - 12 GHz High Power GaN SPDT Switch. TGS2353 DC... (read more)Browse RF Switches Datasheets for TriQuint Semiconductor, Inc. -
Advanced Photonix, Inc.®
GaN and SiC UV DetectorsThese UV, Gallium Nitride (GaN) and Silicon Carbide (SiC), sensors are intended for use in the spectral region of 200 nm to 400 nm where maximum quantum efficiency is required at these wavelengths. These devices are more robust in their resistance to UV degradation than traditional silicon photodiodes while providing greater photocurrent at shorter wavelengths. (read more) -
Integra Technologies, Inc.
GaN-on-Silicon DevicesIntegra announces the world's first GaN-on-Silicon devices operating at 50 volts. Leveraging a world class design team and internal wafer fabrication facility with nearly two years of research and development has culminated in the announcement and launch of two new products the IGN2731M25 and IGN2731M50. Both devices are single ended and are housed in ceramic flanged packages providing excellent thermal advantages. The devices operate over the instantaneous bandwidth covering 2.7 GHz to 3.1 GHz... (read more)Browse Transistors Datasheets for Integra Technologies, Inc. -
TriQuint Semiconductor, Inc.
GaN Switch Solution is 'Best-in-Class'TriQuint's innovative new 40V RF GaN switches deliver unequaled power handling, low loss and superior isolation for defense, aerospace and commercial applications. Featured in a recent Microwave Journal article, the family includes die-level devices for 6, 12 and 18 GHz, plus the packaged TGS2351-SM. "Our latest GaN products have established new, unequaled levels of solid-state RF switch performance," remarked TriQuint VP and GM, James L. Klein. Contact Product Marketing for details. (read more)Browse RF Switches Datasheets for TriQuint Semiconductor, Inc. -
TriQuint Semiconductor, Inc.
TriQuint Opens Industry's 1st GaN Foundry ServiceGaN Foundry TriQuint's gallium nitride (GaN) Foundry is open for wafer starts in September 2008. Dr. Dr. Gailon Brehm, Product Marketing Director for TriQuint encourages companies interested in GaN designs to meet with TriQuint as a step toward production. The new service will target communications applications through the Ku frequency band. GaN-based amplifiers offer inherent advantages compared to other solid-state amplifier technologies including up to 2.5-times the power density of high... (read more) -
TriQuint Semiconductor, Inc.
Highly Efficient 18W GaN RF Power TransistorT1G6001528-Q3 - 18W, 28V, DC-6 GHz, GaN RF Power Transistor. The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint's proven 0.25 µm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Features... (read more)Browse Transistors Datasheets for TriQuint Semiconductor, Inc. -
MITEQ, Inc.
12V Mutli-Octave GaN RF Power AmplifierMITEQ Inc. adds another model to its AMFG family of GaN power amplifiers. High impedances of these devices allow for excellent port match and gain flatness over very wide bandwidths. Inherent robustness of the device technology enables these amplifiers to withstand very high base temperatures or surges in RF or DC power without compromising their reliability. A severe limitation has been the high voltage requirement that may be incompatible with many existing systems. Quick Links: Information... (read more) -
TriQuint Semiconductor, Inc.
New GaN 55W Amp Delivers Best-in-Class Linear GainTriQuint's new T1G4005528-FS is a packaged discrete GaN RF power transistor offering best-in-class linear gain: >15dB, >55 Watts of compressed output power and > 50% efficiency (3.5 GHz.) The T1G4005528-FS is ideal for narrow and wideband applications. Since it can utilize a smaller driver in many designs, the T1G4005528-FS delivers 'greener' performance for overall line-up cost savings. It operates at 28V and is available in an earless ceramic package. Power, gain and efficiency can... (read more)Browse RF Amplifiers Datasheets for TriQuint Semiconductor, Inc. -
TriQuint Semiconductor, Inc.
55W GaN Transistor, X-Band 2W PA, GPS-SDARS DiplexTriQuint Semiconductor is featuring three new innovative RF solutions designed to bring greater system performance and efficiency to a variety of markets and applications including radar systems, PtP radio and automotive. 55W GaN RF Power Transistor. T1G4005528-FS Features. Frequency range: DC - 3.5 GHz. Linear gain: >15dB at 3.5 GHz (best in class). Operating voltage: 28V. Output power (P3dB): 55W at 3.5 GHz. Lead-free and RoHS compliant. · Package: 9.7x5.8mm ceramic air cavity flat lead... (read more)Browse RF Transmitters Datasheets for TriQuint Semiconductor, Inc. -
TriQuint Semiconductor, Inc.
New RF Solutions Product GuidesTriQuint recently released several new product guides featuring our innovative RF solutions for GaN RF power and optical products. Our latest EMEA Defense & Aerospace product guide highlights our industry-leading portfolio of GaAs, GaN, SAW & BAW devices. (read more)Browse RF Amplifiers Datasheets for TriQuint Semiconductor, Inc.
Engineering Web Search: GaN Aggregates
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Graphite - Wikipedia, the free encyclopedia veins or fractures and appears as massive platy intergrowths of fibrous or acicular crystalline aggregates, and is probably hydrothermal in origin. |
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Rat hepatocyte aggregate formation on discrete aligned... Authors: Zhang-Qi Feng, Xue-Hui Chu, Ning-Ping Huang, Michelle K. Leach, Gan Wang, Yi-Chun Wang, Yi-Tao Ding, Zhong-Ze Gu Abstract: Primary |
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Crystallization of oriented isotactic polypropylene (iPP) in... |
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Dr. Jin Seo Im : SPIE.org Profile |
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Neuroscience Graduate Program Faculty - Li Gan, Ph.D. Cellular and Molecular Pathways in Neurodegeneration |
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Cable PON Passive Optical Network - RFoG - Architecture -... The BSR 64000 CMTS aggregates DOCSIS traffic flows for routing across the metropolitan network. See Motorola, Inc. Information |
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Stanford School of Engineering - Personnel Profile within and near active regions in the functional materials such as GaN and AlGaN. Collaborators are exploring a variety of novel composite substrates See Stanford Engineering Information |
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A to Z Nanotechnology | Nanotechnology News, Articles,... See AZoNetwork Information |
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Nanoscience Publications Using Ni masks in inductively coupled plasma etching of high density hole patterns in GaN See U.S. Naval Research Laboratory Information |
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C A u X g62-9 comparable to the exciton Bohr Molecular Beam Epitaxial Growth for Cubic GaN radius. |
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