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GaN Precursor
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Products/Services for GaN Precursor
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Ceramic Powders and Precursors - (197 companies)Ceramic powders and precursors contain oxides, carbides, nitrides, carbon, and other non-metals. They are usually micron or mesh-size in distribution. Ceramic powders, sol-gel solutions and precursors are fabricated through atomization, crushing, milling, precipitation, and other chemical processes. Search by Specification | Learn More -
Thin Film Materials - (181 companies)Thin film materials are high purity materials and chemicals such as precursor gases, sputtering targets, or evaporation filaments used to form or modify thin film deposits and substrates. How to Select Thin Film Materials. What Are Thin Film... Search by Specification | Learn More -
No Image AvailableGlass Powders and Precursors - (12 companies)Glass powders and glass precursors typically consist of oxides with a random, liquid-like or non-crystalline molecular structure. Glass powders and glass precursors are used in a wide variety of applications, so they come in a range of particle sizes and particle distributions. Search by Specification | Learn More
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Nanomaterials - (266 companies)...is a process in which chemicals react to produce very pure, high-performance films. CVD involves flowing a precursor gas or gasses into a chamber containing one or more heated objects to be coated. A chemical reaction occurs on or near the heated surfaces... Search by Specification | Learn More -
Thin Film Equipment - (309 companies)...physical vapor deposition (PVD), ion implantation, plasma etching or cleaning, rapid thermal processing (RTP), and vacuum annealing. In chemical vapor deposition (CVD) processes, a precursor gas or mixture of gases is fed into a chamber... Search by Specification | Learn More -
Thin Film Sources - (81 companies)Thin film sources consist of magnetrons, evaporation thermal units, ion beams and other sources that produce deposition materials (vapors or ions) in a thin film system. Learn More
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RF Transistors - (93 companies)RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. Search by Specification | Learn More
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Electronic and Semiconductor Gases - (35 companies)Electronic and semiconductor gases are specialized for microelectronic manufacturing or semiconductor processing applications such as thin film deposition (CVD, PVD), etching, RTP, packaging or soldering. Learn More
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Materials Processing Services - (322 companies)Materials processing services mechanically or thermally process metals, thermal ceramics, polymers, glasses and other materials on a contract basis. Search by Specification | Learn More
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Gas Generation Equipment - (309 companies)Gas generation equipment provides an onsite supply of gas, vapor, or humidity (water vapor). It eliminates the need for delivery in gas cylinders, which can be bulky and may have special storage requirements. Search by Specification | Learn More
Product News for GaN Precursor
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Real Tech, Inc.
Disinfection By-Products - Precursor MonitoringDisinfection By-Products (DBP) Precursor Monitoring. Chlorine has long been used as a primary disinfection method for many water and wastewater treatment applications. However, there is growing concern about the harmful DBP's produced by the use of chlorine. DBP's, such as triahalomethanes (THMs), can occur when the natural organic matter (NOM) that is present in the water is combined with chlorine. More specifically, the portion of NOM in the water that is aromatic is the most reactive... (read more)Browse Water Quality Testing Instruments Datasheets for Real Tech, Inc. -
TriQuint Semiconductor, Inc.
Newest GaN devicesTriQuint has four new high-power switches that set a performance standard for solid-state switching-TriQuint's GaN devices handle up to 40W CW input power, a performance level previously available only from electromechanical solutions that are substantially larger, heavier and less efficient. For details, please visit TriQuint's website. TGS2351 DC - 6 GHz High Power GaN SPDT Switch. TGS2351-SM DC - 6 GHz High Power GaN SPDT Switch. TGS2352 DC - 12 GHz High Power GaN SPDT Switch. TGS2353 DC... (read more)Browse RF Switches Datasheets for TriQuint Semiconductor, Inc. -
Advanced Photonix, Inc.®
GaN and SiC UV DetectorsThese UV, Gallium Nitride (GaN) and Silicon Carbide (SiC), sensors are intended for use in the spectral region of 200 nm to 400 nm where maximum quantum efficiency is required at these wavelengths. These devices are more robust in their resistance to UV degradation than traditional silicon photodiodes while providing greater photocurrent at shorter wavelengths. (read more) -
Integra Technologies, Inc.
GaN-on-Silicon DevicesIntegra announces the world's first GaN-on-Silicon devices operating at 50 volts. Leveraging a world class design team and internal wafer fabrication facility with nearly two years of research and development has culminated in the announcement and launch of two new products the IGN2731M25 and IGN2731M50. Both devices are single ended and are housed in ceramic flanged packages providing excellent thermal advantages. The devices operate over the instantaneous bandwidth covering 2.7 GHz to 3.1 GHz... (read more)Browse Transistors Datasheets for Integra Technologies, Inc. -
TriQuint Semiconductor, Inc.
GaN Switch Solution is 'Best-in-Class'TriQuint's innovative new 40V RF GaN switches deliver unequaled power handling, low loss and superior isolation for defense, aerospace and commercial applications. Featured in a recent Microwave Journal article, the family includes die-level devices for 6, 12 and 18 GHz, plus the packaged TGS2351-SM. "Our latest GaN products have established new, unequaled levels of solid-state RF switch performance," remarked TriQuint VP and GM, James L. Klein. Contact Product Marketing for details. (read more)Browse RF Switches Datasheets for TriQuint Semiconductor, Inc. -
TriQuint Semiconductor, Inc.
TriQuint Opens Industry's 1st GaN Foundry ServiceGaN Foundry TriQuint's gallium nitride (GaN) Foundry is open for wafer starts in September 2008. Dr. Dr. Gailon Brehm, Product Marketing Director for TriQuint encourages companies interested in GaN designs to meet with TriQuint as a step toward production. The new service will target communications applications through the Ku frequency band. GaN-based amplifiers offer inherent advantages compared to other solid-state amplifier technologies including up to 2.5-times the power density of high... (read more) -
TriQuint Semiconductor, Inc.
Highly Efficient 18W GaN RF Power TransistorT1G6001528-Q3 - 18W, 28V, DC-6 GHz, GaN RF Power Transistor. The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint's proven 0.25 µm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Features... (read more)Browse Transistors Datasheets for TriQuint Semiconductor, Inc. -
MITEQ, Inc.
12V Mutli-Octave GaN RF Power AmplifierMITEQ Inc. adds another model to its AMFG family of GaN power amplifiers. High impedances of these devices allow for excellent port match and gain flatness over very wide bandwidths. Inherent robustness of the device technology enables these amplifiers to withstand very high base temperatures or surges in RF or DC power without compromising their reliability. A severe limitation has been the high voltage requirement that may be incompatible with many existing systems. Quick Links: Information... (read more) -
TriQuint Semiconductor, Inc.
New GaN 55W Amp Delivers Best-in-Class Linear GainTriQuint's new T1G4005528-FS is a packaged discrete GaN RF power transistor offering best-in-class linear gain: >15dB, >55 Watts of compressed output power and > 50% efficiency (3.5 GHz.) The T1G4005528-FS is ideal for narrow and wideband applications. Since it can utilize a smaller driver in many designs, the T1G4005528-FS delivers 'greener' performance for overall line-up cost savings. It operates at 28V and is available in an earless ceramic package. Power, gain and efficiency can... (read more)Browse RF Amplifiers Datasheets for TriQuint Semiconductor, Inc. -
TriQuint Semiconductor, Inc.
55W GaN Transistor, X-Band 2W PA, GPS-SDARS DiplexTriQuint Semiconductor is featuring three new innovative RF solutions designed to bring greater system performance and efficiency to a variety of markets and applications including radar systems, PtP radio and automotive. 55W GaN RF Power Transistor. T1G4005528-FS Features. Frequency range: DC - 3.5 GHz. Linear gain: >15dB at 3.5 GHz (best in class). Operating voltage: 28V. Output power (P3dB): 55W at 3.5 GHz. Lead-free and RoHS compliant. · Package: 9.7x5.8mm ceramic air cavity flat lead... (read more)Browse RF Transmitters Datasheets for TriQuint Semiconductor, Inc.
Conduct Research
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MICRO: Product Extra
The rapid atomic layer deposition (RAD) process module from Genus boosts ALD deposition rates to ~100 A/min, more than five times that of conventional ALD . The new ALD chamber on the StrataGem platform reduces precursor exposure time at the wafer surface and uses purge steps as short as 0.2...
Engineering Web Search: GaN Precursor
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Graphite - Wikipedia, the free encyclopedia |
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Myosin - Wikipedia, the free encyclopedia |
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Selective Area Metal–Organic Vapor Phase Epitaxy of... For InGaN/GaN multiple quantum wells (MQWs), modulation of luminescence wavelength was achieved based on a balance between vapor-phase diffusion of |
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Demonstration of AlGaN/GaN High-Electron-Mobility Transistors... Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110) |
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The influence of Ga source and substrate position on the... The variations of morphological and dimensional aspects of the GaN wires were attributed to the position of Ga precursor and substrates. |
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Three-dimensional GaN nano-structure fabrication by focused... Three-dimensional GaN nano-structure fabrication by focused ion beam chemical vapor deposition |
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Materials, Process, And Device Development for GaN (and SiC) P SOLID-STATE ELECTRONICS MATERIALS, PROCESS AND DEVICE DEVELOPMENT FOR GaN (and SiC) POWER DEVICES ? University of Florida: Device Design/Simulation |
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OFFICE OF NAVAL RESEARCH DOD CRYSTAL GROWTH OF GAN CUBESATS FOR IONOSPHERIC SCIENCE |
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Disalvo, Francis J 427. ?A Universal Precursor for Metal-silica-bioorganic Hybrids?, S.C. Warren, M.R. Perkins, F.J. DiSalvo and U. Wiesner, Angewandte Chemie, |
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Crhea - publications Color control in monolithic white light emitting diodes using a (Ga,In)N/GaN multiple quantum well light converter, |
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