Standards and Technical Documents - Supplement C - Essential ratings and characteristics et semiconductor devices and general principles of measuring methods - Part 0: General and terminology -- IEC 60147-0C:1973
Description: Deals with terminology for diodes, bipolar transistors, thyristors, field-effect transistors, Hall effect devices, magneto-resistive devices.
Supplier: Microchip Technology, Inc.
Description: characteristics, while requiring no external tuning from the user. Speed control can be achieved through either power supply modulation or pulse-width-modulation (using the PWM digital input pin). Due to the compact packaging and minimum bill-of-material (power transistors incorporated, no Hall sensor
- Drive Type: DC Brushless Motor
- Application Categories: PWM Drive
- Maximum Output Voltage: 2 to 5.5 volts
- Rated Power: 0.0020 HP
Linear Position Sensors - 103SR Series Unipolar Hall-Effect Digital Position Sensor with 15/32-32 UNS-2A cylindrical aluminum threaded housing; two hex nuts; 142 mm [5.6 in] 22-gauge PVC insulated conductor cables -- 103SR13A-10Supplier: Honeywell Sensing and Control
Description: ) of the 103SR Series Hall-effect position sensors can be easily interfaced with common electronic circuitry such as microprocessors, integrated logic, discrete transistors, and SCRs with compatible voltage specifications.
- Technology: Magnetoresistive Linear Position Sensor/Switch
- Operating Temperature: -40 to 212 F
- Body: Cylindrical
Description: the bridge drive circuitry, hall sensing circuitry, commutation circuitry and all the current sensing and analog circuitry necessary for closed loop current mode (torque) control. When PWM'ing, the transistors are modulated in locked anti-phase mode for the tightest control and the most bandwidth
- Device Type: PWM Amplifiers
- Package Type: DIP
- Operating Range: Industrial
Supplier: ROHM Semiconductor USA, LLC
Description: This controller synthesizes the optimal driving signal from hall sensor signals, and outputs the synthesized signal to control the external level shifter and power transistor. The replacement is also easy because of the almost pin compatible with BD62011FS, BD62012FS and BD62014FS
- Driver Type: Other
- Supply Voltage: 15 volts
- Operating Temperature: -40 to 230 F
- IC Package Type: SSOP
Description: circuitry, hall sensing circuitry, commutation circuitry and all the current sensing and analog circuitry necessary for closed loop current mode (torque) control. When PWM'ing, the transistors are modulated in locked anti-phase (complementary) mode for the tightest control and the most bandwidth
- Motor(s) / System(s) Controlled: DC Brushless Motor
- Continuous Output Current: 10 amps
- Peak Output Current: 15 amps
- Supply Voltage (DC): 200 volts
Description: drive circuitry, hall sensing circuitry, commutation circuitry and all the current sensing and analog circuitry necessary for closed loop current mode (torque) control. When PWM'ing, the transistors are modulated in locked anti-phase mode for the tightest control and the most bandwidth. Provisions
- Driver Type: Three-phase
- Number of Output Channels: Other
- Output Configuration: Noninverting
- Peak Output Current: 41 amps
Supplier: Festo Corporation
Description: Evaluation unit SMH-AE1-NS3-M12 Will work only with Hall sensors of series SMH-S1-HG.. Authorisation=C-Tick, CE mark (see declaration of conformity)=to EU directive for EMC, Materials note=Free of copper and PTFE, Ambient temperature=5 - 60 Â°C, Switch output=NPN
- Output: Transistor Output
- PLC Power: 24V DC
- Operating Temperature: 41 to 140 F
Supplier: Infineon Technologies AG
Description: Order Nr.: KIT_XMC4x_MOT_GPDLV_001 Price: 99,- EUR Buy Online Summary of Features: Seamless connection to CPU board via ACT Satellite Connector 3 phase low voltage half-bridge inverter using Infineon’s N-channel OptiMOS™3 power transistors Gate Driver IC (6ED003L02-F2
- Category: Development Board
- Function: Break Out Board
Supplier: TRINAMIC Motion Control GmbH & Co. KG.
Description: transistor RDSon hallFX™ sensorless back EMF commutation emulates hall sensors Integrated Break-before-Make logic: No special microcontroller PWM hardware required EMV optimized current controlled gate drivers Overcurrent / Short to GND and undervoltage protection and diagnostics integrated
Supplier: AI-TEK Instruments, LLC
Description: AI-Tek has taken its years of experience of designing and manufacturing Hall Effect sensors for engine timing applications and has developed a line of durable products for industrial use. With multiple standard variations we offer the widest range of standard catalog sensors to meet your various
- Sensor Technology: Hall Effect
- Operating Temperature: -13 to 221 F
- Power Requirements: DC Powered
- Output: Frequency
Supplier: Allied Electronics, Inc.
Description: 15 mA (Typ.), Switches The VX Series combines a miniature size mechanical switch's construction, operating and mounting convenience with solid state reliability. The switching element is a Hall effect transducer with a trigger and amplifier integrated on a silicon chip. An integral magnet
- Actuator Type: Lever, Roller
- Maximum Current Rating: 0.0100 amps
- Maximum DC Voltage Rating: 4.5 to 24 volts
- Actuating Force: 1.55 oz
Supplier: Allied Electronics, Inc.
Description: VX Series Solid State Basic Switch The VX Series combines a miniature size mechanical switch's construction, operating and mounting convenience with solid state reliability. The switching element is a Hall effect transducer with a trigger and amplifier integrated on a silicon chip. An integral
- Switching Mechanism: Solid State
- Maximum Current: 0.0100 amps
- Maximum DC Voltage: 4 to 24 volts
- Base Material: Thermoplastic / Plastic
Supplier: TMP Pro Distribution
Description: High Definition, Serious Impact By applying the full gamut of technology, experience, and resources acquired through the development and production of industry-standard digital mixing consoles and signal processors, as well as extensive know-how gained through years of hall and installation system
- Type: Amplifier
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Intrinsically Safe Shaft Speed Sensors
Electro-Sensors Series 18 shaft speed sensors are FM Approved Intrinsically Safe (IS),Class I, Div I A-G; Ex ia IIC. Series 18 sensors detect passing magnets on a shaft-mounted pulser target, outputting a square-wave pulse signal with frequency proportional to the shaft rotation speed. All models operate down to (and including) zero speed. Options include four M18x1 housings, Hall-effect and Magnetoresistive sensing, single or quadrature signaling and NPN (sinking) or PNP (sourcing) transistor... (read more)
Browse Magnetic Speed Sensors Datasheets for Electro-Sensors, Inc.
Ultra-pure sputtering targets for UHD screens
Transistors in ultra-high definition displays (UHD) possess particularly fine structures. Only extremely pure sputtering targets are suitable for use as the input materials for the fine conductor paths. "UHD-ready" will be the motto when Plansee present their ultra-pure coating materials at Touch Taiwan. Ultra-high definition is a digital video format that transmits images at widths of up to 4000 pixels. Display manufacturers are now supplying the necessary hardware in the form of UHD screens... (read more)
Browse Molybdenum and Molybdenum Alloys Datasheets for PLANSEE SE
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Spin torque transistor revisited
(a),(b):Diﬀerential current gain in the spin ( Hall ) transistor as a function of the voltage ratio VS/VB for diﬀerent values of pS and αSH (β = γ = 5, e2 gS/h/(Lσ) = 1, K = 5pS/6/αSH) (c)αSH = 0.3, (d) αSH = 1.
Anesthesia systems. Part II: Operating principles of fundamental components
A, First Hall transistor ;B, secondHall transistor; C, rotors;D, 4-prong armature; E, magnet.
High sensitive circular Hall Effect sensor for magnetic bead labeled immunoassay
One dual-drain Hall transistor (b) Two transistors consist one sensor unit to reject the excitation field.
A variable temperature test station for extraction of semiconductor device modeling parameters
A picture of the MOS Hall transistor used in this study.
Convective fluid flow through the paracellular system of Necturus gall‐bladder epithelium as revealed by dextran probes.
Stirrer rotations were monitored with a Hall transistor .
Weak localization of Dirac fermions in HgTe quantum wells
The resulting sample represents a field effect Hall transistor based on a HgTe QW.
Recent progress in perpendicularly magnetized Mn-based binary alloy films
… 105 A/cm2.[2–4] Moreover, ferromagnetic films with both high Ku and good compatibility with semi- conductors allow not only for the development of ferromag- netic metal/semiconductor hybrid devices including spin field effect transistors,[6,7] spin Hall transistors , spin light emit …
Effects of high electrical-field stressing on hall mobility and carrier concentration in MOSFET's
Hall data were taken at room (298 K) andliquid nitrogen (77 K) temperatures on Hall transistors as a functionofgate voltageatthe .
Manipulating Quantum Coherence in Solid State Systems
This spin relaxation rate tuning has been proposed as a mechanism for switching spin transistors ( Hall et al., 2003b; Hall and Flatt´e, 2006).
Synthesis and characterization of an electrochromic copolymer based on 2,2′:5′,2″-terthiophene and 3,4-ethylenedioxythiophene
Several discoveries have brought conducting polymers (CPs) to full commercialization with applications in electrochromic rearview mirrors (Monk et al. 2007), thin-film transistors ( Halls et al. 1995), multi- colored displays and image generation (Sahin et al. 2006), sensors (Albert et al. 2000 …
D.J.B. MOS field-effect transistor Hall effect devices.
Brushless DC: a modern approach to variable speed drives
- High temperature, reliable magnetic transistors ( Hall Effect Devices).