Standards and Technical Documents - Supplement C - Essential ratings and characteristics et semiconductor devices and general principles of measuring methods - Part 0: General and terminology -- IEC 60147-0C:1973
Description: Deals with terminology for diodes, bipolar transistors, thyristors, field-effect transistors, Hall effect devices, magneto-resistive devices.
Supplier: Microchip Technology, Inc.
Description: characteristics, while requiring no external tuning from the user. Speed control can be achieved through either power supply modulation or pulse-width-modulation (using the PWM digital input pin). Due to the compact packaging and minimum bill-of-material (power transistors incorporated, no Hall sensor
- Drive Type: DC Brushless Motor
- Application Categories: PWM Drive
- Maximum Output Voltage: 2 to 5.5 volts
- Rated Power: 0.0020 HP
Supplier: ROHM Semiconductor USA, LLC
Description: This controller synthesizes the optimal driving signal from hall sensor signals, and outputs the synthesized signal to control the external level shifter and power transistor. The replacement is also easy because of the almost pin compatible with BD62011FS, BD62012FS and BD62014FS
- Driver Type: Other
- Supply Voltage: 15 volts
- Operating Temperature: -40 to 230 F
- IC Package Type: SSOP
Linear Position Sensors - 103SR Series Unipolar Hall-Effect Digital Position Sensor with 15/32-32 UNS-2A cylindrical aluminum threaded housing; two hex nuts; 142 mm [5.6 in] 22-gauge PVC insulated conductor cables -- 103SR13A-10Supplier: Honeywell Sensing and Control
Description: The 103SR Series Hall-effect position sensor assemblies are sealed in aluminum or stainless-steel threaded housings and meet NEMA 3, 3R, 3S, 4, 4X (stainless-steel housing), 12 and 13 requirements. They respond to the magnetic field from permanent magnets or electromagnets. These rugged non
- Technology: Magnetoresistive Linear Position Sensor/Switch
- Operating Temperature: -40 to 212 F
- Body: Cylindrical
Description: the bridge drive circuitry, hall sensing circuitry, commutation circuitry and all the current sensing and analog circuitry necessary for closed loop current mode (torque) control. When PWM'ing, the transistors are modulated in locked anti-phase (complementary) mode for the tightest control and the most
- Output Current (Iout): 10 amps
- Supply Voltage (VS): 200 volts
- Package Type: DIP
- Life Cycle Stage: Maturity
Description: circuitry, hall sensing circuitry, commutation circuitry and all the current sensing and analog circuitry necessary for closed loop current mode (torque) control. When PWM'ing, the transistors are modulated in locked anti-phase (complementary) mode for the tightest control and the most bandwidth
- Drive Type: DC Brushless Motor
- Application Categories: PWM Drive
- Continuous Output Current: 10 amps
- Peak Output Current: 15 amps
Description: drive circuitry, hall sensing circuitry, commutation circuitry and all the current sensing and analog circuitry necessary for closed loop current mode (torque) control. When PWM'ing, the transistors are modulated in locked anti-phase mode for the tightest control and the most bandwidth. Provisions
- Driver Type: Three-phase
- Number of Output Channels: Other
- Output Configuration: Noninverting
- Peak Output Current: 41 amps
Supplier: Festo Corporation
Description: Evaluation unit SMH-AE1-NS3-M12 Will work only with Hall sensors of series SMH-S1-HG.. Authorisation=C-Tick, CE mark (see declaration of conformity)=to EU directive for EMC, Materials note=Free of copper and PTFE, Ambient temperature=5 - 60 Â°C, Switch output=NPN
- Output: Transistor Output
- PLC Power: 24V DC
- Operating Temperature: 41 to 140 F
Supplier: Infineon Technologies AG
Description: ) with over-current detection circuit (ITRIP) Current measurement by using single or triple shunts (amplified) Single side assembly of all parts Position sensing via Inductive resolver interface using delta-sigma modulator and pattern generator for resolver excitation Hall sensor interface Power jack
- Category: Development Board
- Function: Break Out Board
Supplier: TRINAMIC Motion Control GmbH & Co. KG.
Description: transistor RDSon hallFX™ sensorless back EMF commutation emulates hall sensors Integrated Break-before-Make logic: No special microcontroller PWM hardware required EMV optimized current controlled gate drivers Overcurrent / Short to GND and undervoltage protection and diagnostics integrated
Supplier: AI-TEK Instruments, LLC
Description: AI-Tek has taken its years of experience of designing and manufacturing Hall Effect sensors for engine timing applications and has developed a line of durable products for industrial use. With multiple standard variations we offer the widest range of standard catalog sensors to meet your various
- Sensor Technology: Hall Effect
- Operating Temperature: -13 to 221 F
- Power Requirements: DC Powered
- Output: Frequency
Supplier: Allied Electronics, Inc.
Description: VX Series Solid State Basic Switch The VX Series combines a miniature size mechanical switch's construction, operating and mounting convenience with solid state reliability. The switching element is a Hall effect transducer with a trigger and amplifier integrated on a silicon chip. An integral
- Switching Mechanism: Solid State
- Maximum Current: 0.0100 amps
- Maximum DC Voltage: 4 to 24 volts
- Base Material: Thermoplastic / Plastic
Supplier: Allied Electronics, Inc.
Description: 15 mA (Typ.), Switches The VX Series combines a miniature size mechanical switch's construction, operating and mounting convenience with solid state reliability. The switching element is a Hall effect transducer with a trigger and amplifier integrated on a silicon chip. An integral magnet
- Actuator Type: Lever, Roller
- Maximum Current Rating: 0.0100 amps
- Maximum DC Voltage Rating: 4.5 to 24 volts
- Actuating Force: 1.55 oz
Supplier: TMP Pro Distribution
Description: High Definition, Serious Impact By applying the full gamut of technology, experience, and resources acquired through the development and production of industry-standard digital mixing consoles and signal processors, as well as extensive know-how gained through years of hall and installation system
- Type: Amplifier
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Ultra-pure sputtering targets for UHD screens
their production process at Touch Taiwan. Plansee also supplies display manufacturers with sputtering targets made from tungsten, copper and aluminum, as well as the highly corrosion-resistant alloy molybdenum-tantalum for touch panels. Visitors will be able to find out more about Plansee sputtering targets and the way that they are produced at the International Touch Panel and Optical Film Exhibition (Touch Taiwan): August 28-30, TWTC Nangang Exhibition Hall, Plansee booth N206. . .  ... (read more)
Browse Molybdenum and Molybdenum Alloys Datasheets for PLANSEE SE
PERFORMANCE CONTROLS, INC.®
ACD Servo Drive for Battery Operated Applications
for Induction or Permanent Magnet Brushless Motors. · BLDC can be operated with Resolver, Encoder, Hall Only, or Sensorless. · All modes provide sinusoidal commutation for optimum efficiency. MOSFET Power Devices. · Optimizes power efficiency for longer life per battery charge. 24-48 VDC Operation. · Only one model to stock for 24 to 48 VDC systems. Optional Separate Logic Supply. · Logic can be powered from main bus or a separate supply as an additional safety measure. Over-Temperature Warning... (read more)
Browse Servo Drives Datasheets for PERFORMANCE CONTROLS, INC.®
Intrinsically Safe Shaft Speed Sensors
Electro-Sensors Series 18 shaft speed sensors are FM Approved Intrinsically Safe (IS),Class I, Div I A-G; Ex ia IIC. Series 18 sensors detect passing magnets on a shaft-mounted pulser target, outputting a square-wave pulse signal with frequency proportional to the shaft rotation speed. All models operate down to (and including) zero speed. Options include four M18x1 housings, Hall-effect and Magnetoresistive sensing, single or quadrature signaling and NPN (sinking) or PNP (sourcing) transistor... (read more)
Browse Magnetic Speed Sensors Datasheets for Electro-Sensors, Inc.
PREMA Semiconductor GmbH
PREMA Semiconductor Process for Analog Circuits
cannot provide, or only at high cost, leading to efficient system-on-chip solutions. PREMA's location in the Frankfurt area is perfectly suited for close cooperations with international customers. . ASIC applications. Analog and mixed-signal ASICs such as. switching power supplies. light sensors. hall sensors. temperature sensors. LED drivers. infrared sensors and receivers. ICs for motion detectors. ICs for audio processors. ICs for security electronics. benefit from the performance... (read more)
Browse Semiconductor Foundry Services Datasheets for PREMA Semiconductor GmbH
Infineon Technologies AG
Application Optimized Bipolar Power Modules
efficiency. Availability. Infineon starts mass production of the 1600V PowerBlock modules (20mm and 34mm) with solder bond technology and different current classes in Q4, 2014. In addition, first samples of the 1600V PowerBlock 50mm solder modules will be available starting Q1, 2015. The new bipolar power modules will be showcased at Infineon's booth #348 in hall 1 at the SPS IPC Drives trade fair in Nuremberg from November 25 to 27, 2014. (read more)
Browse Power Bipolar Transistors Datasheets for Infineon Technologies AG
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Spin torque transistor revisited
(a),(b):Diﬀerential current gain in the spin ( Hall ) transistor as a function of the voltage ratio VS/VB for diﬀerent values of pS and αSH (β = γ = 5, e2 gS/h/(Lσ) = 1, K = 5pS/6/αSH) (c)αSH = 0.3, (d) αSH = 1.
Anesthesia systems. Part II: Operating principles of fundamental components
A, First Hall transistor ;B, secondHall transistor; C, rotors;D, 4-prong armature; E, magnet.
High sensitive circular Hall Effect sensor for magnetic bead labeled immunoassay
One dual-drain Hall transistor (b) Two transistors consist one sensor unit to reject the excitation field.
A variable temperature test station for extraction of semiconductor device modeling parameters
A picture of the MOS Hall transistor used in this study.
Convective fluid flow through the paracellular system of Necturus gall‐bladder epithelium as revealed by dextran probes.
Stirrer rotations were monitored with a Hall transistor .
Weak localization of Dirac fermions in HgTe quantum wells
The resulting sample represents a field effect Hall transistor based on a HgTe QW.
Recent progress in perpendicularly magnetized Mn-based binary alloy films
… 105 A/cm2.[2–4] Moreover, ferromagnetic films with both high Ku and good compatibility with semi- conductors allow not only for the development of ferromag- netic metal/semiconductor hybrid devices including spin field effect transistors,[6,7] spin Hall transistors , spin light emit …
Effects of high electrical-field stressing on hall mobility and carrier concentration in MOSFET's
Hall data were taken at room (298 K) andliquid nitrogen (77 K) temperatures on Hall transistors as a functionofgate voltageatthe .
Manipulating Quantum Coherence in Solid State Systems
This spin relaxation rate tuning has been proposed as a mechanism for switching spin transistors ( Hall et al., 2003b; Hall and Flatt´e, 2006).
Synthesis and characterization of an electrochromic copolymer based on 2,2′:5′,2″-terthiophene and 3,4-ethylenedioxythiophene
Several discoveries have brought conducting polymers (CPs) to full commercialization with applications in electrochromic rearview mirrors (Monk et al. 2007), thin-film transistors ( Halls et al. 1995), multi- colored displays and image generation (Sahin et al. 2006), sensors (Albert et al. 2000 …
D.J.B. MOS field-effect transistor Hall effect devices.
Brushless DC: a modern approach to variable speed drives
- High temperature, reliable magnetic transistors ( Hall Effect Devices).