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Supplier: RS Components, Ltd.
Description: Heatsink for TO-3 housings. GAM list model. For Use With = TO-3 Length = 37.5mm Width = 60mm Height = 15mm Dimensions = 37.5 x 60 x 15mm Thermal Resistance = 6K/W
- Length: 1.48 inch
- Width: 2.36 inch
- Height: 0.5906 inch
- Thermal Resistance: 6 °C / W
Supplier: Ohmite Manufacturing Co.
Description: Extruded heatsink Designed for TO-3 devices Available with or without mounting holes
- Device: Passive Heat Sink
- Length: 4.13 inch
- Width: 3 inch
- Height: 1 inch
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LF Dependence of the output admittance in short-channel n- or p-power MOS transistors
Thechip was mountedona TO3 header with an infinite heatsink .
FDTD modelling of heatsinks for EMC
This type of heatsink is especially common with the TO3 type of semiconductor casing where the component is mounted on the finned side of the heatsink, usually external to the case of the equipment.
This type of heatsink is especially common with the TO3 type of semiconductor casing, where the component is mounted on the finned side of the heatsink, usually external to the case of the equipment.
Packaging Considerations For Semiconductor Laser Diodes
The TO3 transistor package is now established, to some extent, as a standard outline for output powers of up to 1 watt CW, incorporating either a large copper heatsink or a peltier heat pump.
An Acoustic Microscope for Industrial Applications
Fig. 17(a) showstheim- ageinside a TO3 power transistorpackage. In thiscase the device is soldered onto a circular disc, which is then soldered onto the heatsink .
Thermal component models for electrothermal network simulation
TO3 package heatsink + .
On the thermal inertia of the semiconductor components
dbstracl- Simple reasonings and relationships are deduced to obtain the semiconductor and heatsink thermal capacitance (inertia) from … 2N3055,in TO3 case,has PD = 115 .
Applications of ternary III-V compounds to high-speed microwave modulation
The stud provides a good heatsink while eliminatingpackageparasitics. Integral heat-sink devices were tested with incident R F power levels up to3 .5-W CW.
Fabrication and thermal performance of a novel TRAPATT diode structure
… for a strip diode having a width equal to thediffusion length of the heatsink (W = 6,a … For a strip diode equal to3 .2 X .
A dynamic electro-thermal model for the IGBT
… component mod- els of the silicon chip, the TO247 package, and the TTC1406 heatsink developed in this … TO3 .