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Product Announcements
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Spray Dried -Slurry Bed Ceramic Powders
Saint-Gobain NorPro Ekonol® Saint-Gobain Coating Solutions Custom Barium, Strontium or Specialty Titanate TPL, Inc. Catalyst Carriers -- Development and Production Saint-Gobain Innovative Materials SIALON Ceramics ~ ideal for tools Hitachi Metals America, Ltd. NanOxide™ Powder Products TPL, Inc. |
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HfO2 Gate Dielectrics Deposited via Tetrakis Diethylamido... HfO2 Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium J. Schaeffer, N.V. Edwards, R. Liu, D. Roan, B. Hradsky, R. Gregory, J. Kulik, E. See Electrochemical Society (The) Information |
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Structural and electrical properties of HfO2 films grown by... Structural and electrical properties of HfO2 films grown by atomic layer deposition on Si and Ge S. Spiga*, M. Fanciulli, C. Wiemer, G. Scarel, G. |
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Hafnium(IV) chloride - Wikipedia, the free encyclopedia Zircon contains 0.05 to 2.0 percent Hafnium oxide HfO2, cyrtolite with 5.5 to 17 percent HfO2 and baddeleyite contains 1.0 to 1.8 percent HfO2.[1 |
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Study of the Reliability Impact of Chlorine Precursor Residues... Study of the Reliability Impact of Chlorine Precursor Residues in Thin Atomic-Layer-Deposited $\hbox{HfO}_{2}$ Layers |
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Interfacial Properties of HfO<inf>2</inf>/ SiN/Si Gate... The SiN films were deposited by electron cyclotron resonance chemical vapour deposition (ECR-CVD) using N2 and SiH4 as precursor gases. |
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ST | STMicroelectronics, CEA-Leti and AIXTRON Develop... of classical MOCVD, those of the precursor-pulsed deposition mode: high throughput (>20 wafers/h @ 5 nm of HfO2), atomic precision of the deposition |
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Effects of UV Irradiation on Microstructure and Properties... Effects of UV Irradiation on Microstructure and Properties of HfO2 Films Prepared from Alkoxy-Derived Precursor Solution |
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METHOD AND APPARATUS FOR USING SOLUTION PRECURSORS FOR ATOMIC... vaporized precursor solution and a vaporized reaction solution to a deposition chamber;forming a monolayer of components of the precursor solution |
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Supplementary information for the Appl. Phys. Lett. article... Growth parameters for HfO2-shell deposition The HfO2 deposition is performed by Atomic Layer Deposition (ALD). The Hf precursor is |
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Research 1. Precursor Design - the precursor materials are specifically designed to have high volatility and thermal reactivity at the furnace temperatures. |