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Supplier: Excelitas Technologies Corp.
Description: The FFD-100H is a Large-Area Silicon PIN Photodiode with a 2.5 mm active diameter in a hermetically-sealed TO-5 package. This photodiode produces high responsivity from 400 nm to 1150 nm with a peak responsivity at 920 nm. It features an ultra-fast rise and fall time, low
- Active Area Diameter or Length: 2.5 mm
- Dark Current: 0.0250 nA
- Operating Temperature: -40 to 125 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Excelitas Technologies Corp.
Description: The FND-100QH is a large-area Silicon PIN photodiode with a 2.5 mm active diameter in a hermetically-sealed TO-5 package with a quartz window. This photodiode provides high responsivity from 200 nm to 1150 nm, with a peak responsivity at 920 nm. The FND-100QH has a quartz
- Active Area Diameter or Length: 2.5 mm
- Dark Current: 25 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
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Supplier: Excelitas Technologies Corp.
Description: The C30619GH is a large-area InGaAs PIN photodiode with a 0.5 mm active diameter chip in TO-18 package and flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features high responsivity, high shunt resistance, low
- Active Area Diameter or Length: 0.5000 mm
- Dark Current: 1 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Indium Gallium Arsenide
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Supplier: Excelitas Technologies Corp.
Description: The C30665GH is a large-area InGaAs PIN Photodiode with a 3.0 mm active diameter chip in TO-5 package and a flat glass window. This photodiode provides high quantum efficiency from 800 nm to 1700 nm. It features high responsivity, high shunt resistance, low
- Active Area Diameter or Length: 3 mm
- Dark Current: 25 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Indium Gallium Arsenide
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Supplier: OSI Optoelectronics
Description: . These detectors exhibit excellent stability over time and temperature, fast response times necessary for high speed or pulse operation, and position resolutions of better than 0.1 µm. Maximum recommended power density is 10 mW / cm2 and typical uniformity of response for a 1 mm
- Active Area Diameter or Length: 4.6 mm
- Active Area Height: 0.5000 mm
- Dark Current: 20 nA
- Operating Temperature: -40 to 100 C
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Supplier: OSI Optoelectronics
Description: signal while the output voltage increases with light input. This is achieved by a single +3.3V to +5V positive power supply. These devices are available in 4 pin TO-46 metal packages with either a double sided AR coated window cap or an integrated lens cap. The 250µm diameter sensing
- Active Area Diameter or Length: 0.2500 mm
- Operating Temperature: -40 to 75 C
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
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Supplier: OSI Optoelectronics
Description: photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements. They have high shunt resistance, low noise and high breakdown voltages. The response uniformity across the surface and quantum efficiency improves with 5 to 10 volts
- Active Area Diameter or Length: 2.4 mm
- Active Area Height: 2.4 mm
- Noise Equivalent Power (NEP): 1.30E-14 W/Hz½
- Operating Temperature: -20 to 60 C
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Supplier: OSI Optoelectronics
Description: photodiodes exhibit 100% internal quantum efficiency and are well suited for low intensity light measurements. They have high shunt resistance, low noise and high breakdown voltages. The response uniformity across the surface and quantum efficiency improves with 5 to 10 volts
- Active Area Diameter or Length: 10 mm
- Active Area Height: 10 mm
- Noise Equivalent Power (NEP): 5.80E-14 W/Hz½
- Operating Temperature: -20 to 60 C
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Supplier: Broadcom Inc.
Description: %. This high gain coupler uses an AlGaAs LED and an integrated high gain photodetector to provide an extremely high current transfer ratio between input and output. Separate pins for the photodiode and output stage results in TTL compatible saturation voltages and
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 3750 volts
- Mounting Option: Surface Mount
- Operating Temperature: 0.0 to 70 C
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Supplier: Broadcom Inc.
Description: %. This high gain coupler uses an AlGaAs LED and an integrated high gain photodetector to provide an extremely high current transfer ratio between input and output. Separate pins for the photodiode and output stage results in TTL compatible saturation voltages and
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 3750 volts
- Mounting Option: Surface Mount
- Operating Temperature: 0.0 to 70 C
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Supplier: RS Components, Ltd.
Description: spectrum. The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements. Photodiodes with the planar diffused
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Sensitivity: 0.1400 A/W
- Spectral Response: UV
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Supplier: RS Components, Ltd.
Description: spectrum. The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements. Photodiodes with the planar diffused
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Spectral Response: UV
- Spectral Response Range: 190 to 1100 nm
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Supplier: RS Components, Ltd.
Description: The FCI-InGaAs-xxx-x series, from OSI Optoelectronics, are large active area InGaAs photodiodes. They are a range of IR sensitive detectors which offer high responsivity (1100-1620nm). They come in TO-46 or TO-5 packages with a flat window. Suitable applications for this family of
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
- Sensitivity: 0.9500 A/W
- Spectral Response Range: 1100 to 1620 nm
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Supplier: RS Components, Ltd.
Description: The FCI-InGaAs-xxx-x series, from OSI Optoelectronics, are large active area InGaAs photodiodes. They are a range of IR sensitive detectors which offer high responsivity (1100-1620nm). They come in TO-46 or TO-5 packages with a flat window. Suitable applications for this family of
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
- Sensitivity: 0.9500 A/W
- Spectral Response: IR
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Supplier: Broadcom Inc.
Description: This device is a very low power consumption high gain dual channel optocoupler. It represents the dual channel 8-pin DIP configuration and is pin compatible with the popular standard HCPL-2731. Each channel can be driven with an input current as low as 40 µA and has a
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 5000 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: 0.0 to 70 C
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Supplier: First Sensor AG
Description: High voltage sources from First Sensor are optimized for use with PIN photodiodes and avalanche photodiodes (APDs) and feature minimal voltage noise and a compact design. The available models cover a broad spectrum ranging from moderately high voltages for
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Supplier: Electro Optical Components, Inc.
Description: The series HCA-S-200M Photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA Current Amplifier technology. The HCA-S-200M is available with either a fast large area Si or InGaAs photodiode covering a spectral range from 320 to 1000 nm and 900 to 1650 nm,
- Output Type: Voltage Output
- Photosensor Type: PIN Photodiode
- Spectral Response: 320 to 1700 nm
- Supply Voltage: 15 volts
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Supplier: Electro Optical Components, Inc.
Description: The series HCA-S-400M Photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA Current Amplifier technology. The HCA-S-400M is available with either a fast Si or InGaAs photodiode covering a spectral range from 320 to 1000 nm and 900 to 1700 nm, respectively.
- Output Type: Voltage Output
- Photosensor Type: PIN Photodiode
- Spectral Response: 320 to 1700 nm
- Supply Voltage: 15 volts
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Supplier: Broadcom Inc.
Description: This dual channel optocoupler contains a separated pair of GaAsP light emitting diodes optically coupled to a pair of integrated high gain photo detectors. It provides extremely high current transfer ratio and excellent input-output common mode transient immunity. A separate pin
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 3750 volts
- Mounting Option: Surface Mount
- Operating Temperature: 0.0 to 70 C
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Supplier: PHOTONIS Technologies SAS
Description: Planacon detector and avoid mis-wiring. The schematic corresponds to the recommended voltage divider in the Planacon datasheet. We use only high quality components, heavily overspecified on high voltage ratings, and the exposed contacts potted in a high voltage grade compound.
- Active Area Diameter or Length: 53 mm
- Array: Yes
- Dark Current: 2 to 10 nA
- Operating Temperature: 0.0 to 50 C
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Supplier: Electro Optical Components, Inc.
Description: Adjustable transimpedance gain from 102 to 108V/A Wide bandwidth up to 200 MHz Various Si and InGaAs models cover the 320 to 1,700 nm wavelength range High dynamic input range up to 10 mW optical power Large optical detector size up
- Output Type: Voltage Output
- Photosensor Type: PIN Photodiode
- Spectral Response: 400 to 1700 nm
- Supply Voltage: 15 volts
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Supplier: Maxim Integrated
Description: The DS3923 high-speed current mirror integrates high-voltage devices necessary for monitoring the burst-mode receive power signal in avalanche photodiode (APD) biasing and optical line terminal (OLT) applications. It provides small and large gain current mirror outputs to
- Package Type: Other
- Pin Count: 24
- RoHS Compliant: Yes
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Supplier: Maxim Integrated
Description: The MAX3658 is a transimpedance preamplifier for receivers operating up to 622Mbps. Low noise, high gain, and low power dissipation make it ideal for fiber access and small form-factor transceivers. The MAX3658 features 45nA input-referred noise, 18kO transimpedance gain, 580MHz
- Operating Temperature: -40 to 85 C
- Package Type: Other
- Pin Count: 8
- RoHS Compliant: Yes
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Supplier: Electro Optical Components, Inc.
Description: s and PIN-Photodiodes) Oscilloscope and Transient Recorder Preamplifier Time-Resolved Pulse and Transient Measurements Signal Booster in 50 O High Speed Systems
- Bandwidth: 2.50E6 kHz
- Form Factor: Panel / Chassis Mount
- Input Impedance: 5.00E-5 Mohms
- Maximum Output: 2 +/-volts
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Supplier: Analog Devices, Inc.
Description: Product Details The LT®1057 is a matched JFET input dual op amp in the industry standard 8-pin configuration, featuring a combination of outstanding high speed and precision specifications. It replaces all the popular bipolar and JFET input dual opamps. In particular, the
- Gain-Bandwidth Product (GBW): 5 MHz
- Input Bias Current (IBIAS): 5.00E-5 µA
- Input Offset Voltage (VOS): 0.1800 millivolts
- Operating Temperature: 0.0 to 70 C
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Supplier: Skyworks Solutions, Inc.
Description: The OLH5500/5501 are hermetic 8-pin DIP optocouplers for wide bandwidth analog applications, as well as for interfacing Transistor-to-Transi stor Logic (TTL) to Low-Power Schottky Transistor-Transisto r Logic (LSTTL) or Complementary Metal Oxide Semiconductors (CMOS). The OLH5501
- Mounting Option: Surface Mount
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Supplier: SemiNex Corporation
Description: Wavelength: 1460 nm Aperture: 105 um Mode: Multi Mode Junction: Single Photodiode SemiNex’s 4Pin Fiber Coupled Laser Module features a high power SemiNex laser diode chip mounted in a convenient low cost package. This package
- Laser Output: Continuous Wave
- Laser Type: Laser Diodes, Laser Diode Modules
- Laser Wavelength: Infrared
- Operating Current Range: 12000 milliamps
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Power Operational Amplifiers - 3V/5V Low-Power, Low-Noise, CMOS, Rail-to-Rail I/O Op Amps -- MAX9637Supplier: Maxim Integrated
Description: a low-power shutdown mode that reduces supply current to 1µA and places the amplifiers' outputs into a high-impedance state. The ICs are specified over the automotive operating temperature range (-40°C to +125°C). The single is offered in a space-saving, 6-pin SC70 package,
- CMRR: 86 dB
- Gain-Bandwidth Product (GBW): 1.5 MHz
- Input Bias Current (IBIAS): 8.00E-7 µA
- Input Offset Voltage (VOS): Up to 2.2 millivolts
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Supplier: Microwave Photonic Systems, Inc.
Description: The MP-6000RX is a RF/Fiber Optic Receiver designed for antenna remoting and ultra-broadband RF transmission applications using singlemode fiber optic cable.The receiver utilizes a high-speed, low distortion PIN photodiode detector that provides Optical to RF conversion out to
- Bandwidth: 20000 MHz
- Cable Type: Single Mode
- Connector Type: FC, SC, Other
- Operating Temperature: -40 to 160 F
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Supplier: Analog Devices, Inc.
Description: Product Details The ADA4691-2 and ADA4692-2 are dual, rail-to-rail output, single-supply amplifiers featuring low power, wide bandwidth, and low noise. The ADA4691-2 has two independent shutdown pins, allowing further reduction in supply current. These amplifiers are ideal for a wide
- Gain-Bandwidth Product (GBW): 3.6 MHz
- Input Bias Current (IBIAS): 5.00E-6 µA
- Input Offset Voltage (VOS): 2.5 millivolts
- Operating Temperature: -40 to 125 C
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Supplier: Renesas Electronics Corporation
Description: controls and photodiode amplifiers. The ISL28110 single amplifier and the ISL28210 dual amplifiers are available in the 8 Ld SOIC package. All devices are offered in standard pin configurations and operate over the extended temperature range from -40°C to +125°C.
- Bandwidth: 12.5 MHz
- CMRR: 100 dB
- Input Bias Current (IBIAS): 2.00E-6 µA
- Input Offset Voltage (VOS): 0.3000 millivolts
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Supplier: Maxim Integrated
Description: The MAX3130/MAX3131 combine an IrDA 1.2 compatible infrared transceiver with an RS-232 interface-all in a single 3V-powered hybrid microcircuit. The infrared transceiver supports IrDA data rates of 2.4kbps to 115kbps. The infrared receive channel provides a high-gain/low-noise
- Device Type / Applications: Transceiver, Other
- IC Package Type: SSOP
- Pin Count: 28 #
- RoHS Compliant: Yes
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Supplier: MACOM
Description: -sensitivity highly-reliable PIN photodiodes and high performance low power consumption MACOM quad Trans-Impedance Amplifier (TIA). The ROSA is assembled in a hermetic-sealed package with an LC receptacle for optical input and two flex circuits for DC/RF electrical
- Amplifier Type: Transimpedance
- Connector Type: LC
- Data Rate: 28000 Mbps
- Photodiode Semiconductor: InGaAs (900nm to 1700nm)
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Supplier: Semtech Corp.
Description: Semtech offers a portfolio of fully integrated Silicon Germanium (SiGe) BiCMOS and pure CMOS transimpedance amplifiers providing wideband, low noise pre-amplification of a current signal from a PIN photodiode or APD. Gennum's TIAs offer best-in-class performance in limiting, linear or
- Data Rate: 0.1550 to 14.3 Gbps
- RoHS Compliant: Yes
- Supply Voltage (VS): 3.3 volts
- Transimpedance: 3 to 63 kohms
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Supplier: Micropac Industries, Inc.
Description: . Features: • Current transfer ratio: 150% typical • Base lead provided for conventional transistor biasing • Low power consumption • High radiation immunity • 1000 Vdc isolation test voltage
- Collector Emitter Breakdown Voltage: 40 volts
- Isolation Voltage: 1000 volts
- Mounting Option: Surface Mount
- Operating Temperature: -55 to 125 C
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More Information Top
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Microwave Photonics
• high power PIN photodiode .
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Wideband photonic millimeter-wave synthesizer using a high-power pin waveguide photodiode
Dual mode laser set-up 1,55 µm high - power pin photodiode SMF .
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Waveguide-integrated components based 100 Gb/s photoreceivers: From direct to coherent detection
In the ETDM concept mostly high - power pin photodiodes are used behind optical pre-amplification [1, 2], cf. to Figure 1a.
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Co-Packaged 107 Gb/s photoreceiver for direct detection comprising InP-based pinTWA and DEMUX
Figure 1 shows a basic receiver concept applicable to 100GE within the ETDM system, where high - power pin photodiodes are used behind optical pre-amplifiers 1, 2 , cf. (Figure 1a).
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High-energy (59 pJ) and low-jitter (250 fs) picosecond pulses from gain-switching of a tapered-stripe laser diode via resonant driving
These high energy pulses were detected by a 10-GHz high - power pin photodiode to obtain ~ 3 0 0 - m Vpulses, which improvedthe signal-to-noise ratio ( S N ) in the jitter estimation.
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Modeling of photodetectors for microwave and high-power applications
modeling of a conventional microwave PIN photodiode under high power top illumination.
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Modelling of PIN photodetectors for microwave and high power applications
This is why we present, in this paper, in a first part, the modeling of a PIN waveguide photodetector, and in a second part, the modeling ofa conventional microwave PIN photodiode under high power top illumination.
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Detailed author index
C Wideband Photonic Millimeter-Wave Synthesizer Using a High - Power Pin Waveguide Photodiode Jain, Alok .
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Book of abstracts
Wideband Photonic Millimeter-Wave Synthesizer Using a High - Power Pin Waveguide Photodiode .
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Abstracts cards
Wideband Photonic Millimeter-Wave Synthesizer Using a High - Power Pin Waveguide Photodiode .