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Supplier: California Eastern Laboratories - CEL
Description: The uPG2409T6X is a GaAs MMIC high power SPDT (Single Pole Double Throw) switch for WiMAX. This device can operate from 0.05 to 6.0 GHz, with low insertion loss and high isolation. This device is housed in a 6-pin plastic TSON (Thin Small Out-line Non-leaded) (T6X) package, and is suitable
- Impedance: 50 ohms
- Max Input Channels: 1, 2
- Max Output Channels: 1, 2
- Actuator Type: SPDT
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Supplier: TriQuint Semiconductor, Inc.
Description: Features pHEMT GaAs MMIC Die Excellent Cross-Modulation Performance 108 dBm Typ @Cellular 106 dBm@AWS 105 dBm @ PCS Excellent ESD Rating 300V HBM, 2000V CDM Low Control Voltage Operation to =2.6V High Isolation: 23dB typ at AWS and 22dB typ at PCS Very Low Control Current: 10
- Impedance: 50 ohms
- Actuator Type: Other
- Package Type: Flatpack, Other
- Connector: Other
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Supplier: Skyworks Solutions, Inc.
Description: analog pad (VCONT) to improve efficiency for the low RF power range operation. GaAs MMIC contains all active RF circuitry including input and interstage matching circuits; output match into a 50-ohm load is realized off-chip within the module package. Skyworks' GaAs (HBT) process provides for all
- Amplifier Type: Power Amplifier
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Supplier: Skyworks Solutions, Inc.
Description: because of high efficiencies throughout the entire power range. A single GaAs MMIC contains all active circuitry in the module. Output match realized off-chip within the module package optimizes efficiency and power performance. Skyworks’ InGaP GaAs HBT process provides for all positive voltage DC
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Supplier: Skyworks Solutions, Inc.
Description: BiFET PA MMIC, reducing RF loss between the integrated components andwithin the Duplexer itself, and improving the match between the PA and the Duplexer, thisFEM achieves low current at maximum output power that significantly reduces the powerdissipated in the LTE-enabled handsets or data cards. Primary
- Function: Transceiver
- Form Factor / Package: Surface Mount Technology (SMT)
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Supplier: Avago Technologies
Description: has a bypass switch function, which sets the current to zero and provides low insertion loss. The bypass mode also boosts dynamic range when high level signal is being received.
- Amplifier Type: Low Noise Amplifier
- Applications: Mobile / Wireless Systems
- RoHS Compliant: Yes
- MMIC Technology Required: Yes
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Supplier: Spectrum Microwave
Description: appropriate filter and switch technologies to achieve the best overall performance. This includes design options such as MMIC FET switches for fast switching requirements, discrete PIN diode switches for high isolation, or may involve multiple filter topologies or using multiplexed filter banks
- Filter Technology: Passive Filter
- Filter Type: Other
- Filter Design: Other
- Package Type: Connectorized
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Supplier: TriQuint Semiconductor, Inc.
Description: loss is approximately 20 dB. Typical isolation at 10 mA bias is 40 dB. Insertion loss and isolation can be adjusted by varying the switch arm bias currents. Using a GaAs vertical PIN diode process, TriQuint has produced switches with high power handling capability, low on-state resistance and low
- Device Type: Other
- Life Cycle Stage: Maturity
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Ultra-Miniature High Linearity SPDT Switch for WLAN Applications
. capabilities can be estimated by the equation. where Vth is the threshold voltage of the FETs, Vbias is the control bias applied to the gate, and n is the number of. stacking FETs. The stacking FET configuration is the traditional way to achieve high power in MMIC switch. However,. within a limited area
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TA028: GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost
a complete suite of passive and active components. Any of the. processing steps may be deleted for cost reduction if not required for a particular product. For. example, our RF switch product line uses no front side plating or backside processing. Reliability. The failure mechanism which determines
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Copper Interconnect on GaAs pHEMT by Evaporation Process
FCE2700 evaporator. We used a Tungsten (W). liner for Cu to lower the deposition power. The source was. allowed plenty of cool time before venting to atmosphere. Otherwise Cu would quickly oxidize. Our new generation of MMICs has tight performance. specifications. To match the RF performance
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power High power RF, high-frequency point-to-point RF chipsets, high-reliability signal sources, and modules.
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February 2010 Ultra-Miniature High Linearity SPDT Switch for...
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Description ??? Digital cellular (CDMA) The SKY77163 AutoSmart??? Power Amplifier Module (PAM) is a fully matched, 8-pin surface mount ??? module
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TABLE II FUNCTION TABLE STATE RF-A RF-B RF-C Icontrol- Icontrol- Icontrol- A B C 1 Low- Isolated Isolated +20 mA -20mA -20mA Loss 2 Isolated Low-
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High-Linearity K-Band Absorptive-Type MMIC Switch Using GaN PIN-Diodes
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