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  • RF/Microwave Solid State Switches
    ) such as pseudomorphic. high electron mobility transistors. (pHEMTs), each of which offers relative. advantages and disadvantages. Part 1 of. this article includes an overview of RF/. microwave switches, theory of operation. for PIN diodes and some representative. PIN diode switch circuits. In Part 2 we
  • Modeling of SOI FET for RF Switch Applications
    is caused by the voltage imbalance, a direct result of. diagnostic tool. the substrate loss, in a switch made of many FETs stacked in. This paper discusses various effects in an SOIFET and. series. The voltage imbalance is the main non-linearity. contributor to a FET switch at high-power levels
  • Solid State RF/Microwave Switch Technology: Part 2
    ) -- with. emphasis on the pseudomorphic. high electron mobility transistor. (pHEMT) -- and its implementation. in RF/microwave switches. We will also describe criteria. with which the relative advantages. of PIN diode switches and. pHEMT switches compare for. specific types of applications
  • Application: High Frequency Reed Relays in RF Receivers
    be very expensive and suffer from inter. modular distortion, while electromechanical relays are large, bulky and. expensive. MEDER’s continually advancing RF reed relays are ideally suited for. this application. Figure 1. CRF physical layout. Features. • High reliability. • Ideal RF characteristics
  • Discrete RF Semiconductors: Alive and Well
    suited for detection of very low power RF signals, the high barrier. diode is readily able to handle large RF signal amplitudes, with the low and medium. barrier diodes’ power detection and handling capabilities falling in between. As my colleague predicted, I have had the very good fortune
  • Application: RF Attenuators Use Reed Relays
    . They can also be very expensive. New high frequency reed relays. from MEDER have become the design-in choice with their greatly improved RF. Figure 1. CRF physical layout. characteristics and long life. Features. • High reliability. • Ideal RF characteristics. • Ideal for carrying fast digital pulses
  • Ultra-Miniature High Linearity SPDT Switch for WLAN Applications
    ) switching and power control, which. significantly affect the overall terminal performance. As a key element of the WLAN, the design engineer has no. choice but to hunt for single pole double throw (SPDT) switches with compact size, low cost, and high performance. In the typical RF front end of a WLAN
  • A High Power Solid State T-R Switch
    to hold the diode in its high impedance. state in the presence of RF voltages large enough to instantaneously apply. forward voltage to the diode and possibly into conduction. The magnitude of. reverse voltage required in a high power switch depends on frequency, RF. voltage and PIN diode I-region width