Products/Services for How BJT Temperature Sensor Work

More >>

Product News for How BJT Temperature Sensor Work

More >>

More Information on: How BJT Temperature Sensor Work

Lock Indicates content that may require registration and/or purchase. Powered by IHS Goldfire

  • MEMS & Sensors
    The untrimmed inaccuracy of 0.50C achieved in this work is equivalent to the performance of state-of-the-art BJT -based temperature sensors .
  • Temperature sensor using BJT-MOSFET pair
    In this reported work , a PMOSFET was cascaded to a pnp BJT , which is a part of a current reference, in order to implement a temperature sensor .
  • A 69 μW CMOS smart temperature sensor with an inaccuracy of ±0.8°C (3σ) from −50°C to 150°C
    Furthermore in the deep sub-micron CMOS technology, the characteristic of BJT is getting worse and hardly to work on low power application. As a result, the design of smart temperature sensor has become a major challenge in deep sub- micron CMOS process.
  • 12.8 A BJT-based CMOS temperature sensor with a 3.6pJ·K2-resolution FoM
    This paper presents a precision BJT -based temperature sensor implemented in standard CMOS. ...interfaced to a microcontroller, rather than the discrete-time ΔΣ modulators of most previous work [2-4].
  • Technologies That Could Change the World¿You Decide! [Conference Reports]
    keeping the audience engaged and entertained, Makinwa reminded us, like a true academic, about the space he knows so well: Most temperature sensors implemented on silicon are BJT , MOSFET, or resistor based... ...one, two, or three temperature point calibrations re- spectably... The most popu- lar—BJT-based temperature sensors , which are realizable with only one temperature point for calibration... Makinwa’s new temperature sen- sor, based on thermal diffusivity of silicon, works by appling a square wave...
  • Power Electronics for Distributed Energy Systems and Transmission and Distribution Applications: Assessing the Technical Needs for Utility Applications
    Ongoing projects: High-voltage Schottky barrier diode on CVD single-crystal diamond GaN power devices 4 H-SiC–based BJTs and Darlingtons for power device applications 4H-SiC–based high... ...Silicon IGBT/MPS power device Silicon DMOSFET/MPS and integrated current sensors Si lateral trench RESURF... Auburn The Center for Space Power and Advanced Electronics (CSPAE) under the Space Research Institute is working on high- temperature SiC device technology and high-temperature electronics/ packaging.
  • A Self-Powered CMOS Reconfigurable Multi-Sensor SoC for Biomedical Applications
    ...based on MEMS with modi- fied hydrogel, nanowire, ISFET, and bipolar junction transistor ( BJT ) are integrated monolithically... These sensors are widely used in biomedical sensing applications. In this work , they are used to detect glucose, protein, pH value, and temperature , re- spectively, for real-time blood monitoring application.
  • A 1.05 V 1.6 mW, 0.45 $^{\circ}$C 3 $\sigm...
    The main motivation of this work is to design a tempera- ture sensor with sufficient un-calibrated accuracy This work uses a pair of ver- tical pnp BJTs to generate a temperature-dependent differential voltage that is measured by a .
  • Gate driver based soft switching for SiC BJT inverter
    The authors would like to thank X. Li, P. Alexandrov and other researchers in SiCLab of Rutgers for working hard to provide the Sic BJT devices. The authors would also like to thank Jun Kim of ELGAR for providing support of the Sorenson DHP power supply and thank SIGNUM electronics for providing a good temperature sensor .
  • A Primary-Auxiliary Temperature Sensing Scheme for Multiple Hotspots in System-on-a-Chips
    This non-ideality of VEB introduces offset and gain errors into the sensor output, and thus a... In this work , instead of using VEB as the measure of temperature , we utilize the voltage difference of two BJT transistors VEB, which can be derived as VEB = VT ln(N) .
  • A 5µW fractional CMOS bandgap voltage and current reference
    Then, Ali joined MV-Technology as director of design working on CMOS audio D/A converters for PC... In 1994, he joined TelCom Semiconductors (now Microchip Technology) as vice president of design, where he developed precision A/D converters, temperature sensors , high-power BJT regulators, power management SOCs in CMOS and Bipolar for PC, consumer, and wirelesses applications.
  • A low supply voltage 2µW half bandgap reference in standard sub-µ CMOS
    Then, Ali joined MV-Technology as director of design working on CMOS audio DIA converters for PC... In 1994, he joined TelCom Semiconductors (now Microchip Technology) as vice president of design, where he developed precision AID converters, temperature sensors , high-power BJT regulators, power management SOCs in CMOS and .
  • Temperature and process independent ring-oscillator using compact compensation technic
    Both will cause the circuit no work . In the reference paper [8], a 4.7% frequency variation ring oscillator was reported from 35 to 115 ◦ C. Coming out from the Vth sensor and the BJT circuit, V ctrl will be a temperature .
  • Applications of AlN thin-film resonator topologies as antennas and sensors
    ...is designed to be compatible with an f, > 2.5 GHz trench-isolated BJT technology [ I31 so... Work proceeds towards the concept illustrated in Figure 7 where the outputs from two identical cointegrated TFR- controlled oscillators (one sensor TFR passivated, the second identical sensor TFR exposed to the sensing environment) are mixed to obtain a low-frequency baseband output... This approach should enhance sensitivity and repeatability by effectively minimizing temperature - induced drift and mechanical aging.
  • A low power temperature sensor for passive RFID tag
    In this paper, we propose a novel BJT -based temperature sensor for passive RFID tags, which adopts resource reuse method to fully utilize existing modules of RFID tags. This work was supported by Postdoctoral Science Foundation of China under Grant 20080440942 and Ministry of Education...