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Conduct Research

. blanking/tip switch. MOSFET die, 0.110 sq in., 1 KV, 13.5 ohm. MOSFET, 1 KV, 13.5 ohm. MCM, 6-array MOSFET (MSAFA1N100D). High-voltage. switching bridge. IGBT die, 0.160 sq in., 1200 V, 55-A surge. MCM, half-bridge, capacitive-coupled, IC-driven IGBT. Thyristor-based (SCR and Triac) up to 1200 V...

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