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Insulated Gate Bipolar Transistors (IGBT) - IGBT Discretes with Anti-Parallel Diode 600V-1600V -- IGW30N65L5
Description: Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows
Description: PrimeSTACK™ C2 including FF200R12KS4 IGBT Modules is a complete switch solution for power electronic circuits containing all the necessary components for current, voltage and temperature measurements. Summary of Features: 1200V Fast IGBT 2 for high-frequency switching Based on 62mm standard
- Package Type: Other
Description: tail current with low temperature dependence Low treshold voltage Typical Applications Switching (not for linear use) High Frequencies Applications Welding generator Switched mode power supplies UPS
- Polarity: N-Channel
- VCES: 600 volts
- VCE(on): 2 volts
- IC(max): 62 amps
Description: integrated ultrafast body diode Utmost efficiency levels reachable No gate oxides in the structure Benefits: Direct Drive solution simplifies design in and enables normally-off behavior Extremely low and temperature independent switching losses Reduced conduction losses with respect to IGBT mainly
- Transistor Type / Technology: JFET
- Package Type: Other
Supplier: Duncan Instruments Canada, Ltd.
Description: High Frequency IGBT-based Switch-Mode DesignFully Programmable PowerIndustry Leading 1U Power Density, Many Input AC OptionsDesigned for SafetyScalable Master-Slave OperationExtensive Programming Support and Included Software
- Style / Mounting: Enclosed, Rack Mount, External Power Supply
- Rack Mount Size: 1U - Rack Mounted
- AC Input Voltage: 115 VAC, 208 VAC, 480 VAC, Other
- Input Frequency: 50 Hz, 60 Hz, 400 Hz, Other
Supplier: Fairchild Semiconductor
Description: Fairchild offers high voltage gate-drive (HVICs) which improve system reliability through the implementation of an innovative noise canceling circuit that provides excellent noise immunity. These industry-leading MOSFET & IGBT Gate Driver solutions are ideal for a wide range of applications
- Driver Type: Low-side Gate Driver
Supplier: MSK Products
Description: The MSK 4470 is a complete 3 Phase IGBT Bridge Brushless Motor Control System in a convenient isolated baseplate package. The hybrid is capable of 10 amps of output current and 500 volts of DC bus voltage. It has the normal features for protecting the bridge. Included is all the bridge drive
- Driver Type: Three-phase
- Number of Output Channels: Other
- Output Configuration: Noninverting
- Peak Output Current: 15 amps
Supplier: ROHM Semiconductor USA, LLC
Description: ROHM's MOS-IPM is high efficiency IPM product which uses PrestoMOS. This item dramatically reduces power loss compared with IGBT products when Air-conditionor drives under light load condition.
- Driver Type: Other
- Peak Output Current: 15 amps
- Switching Frequency: 20000 Hz
- IC Package Type: Other
Description: voltage up to 4kVAC) Switching frequency of up to 100kHz and duty cycle 0…1 Gate resistor for turn-on and turn-off separately adjustable optimisation of IGBT performance in various applications
- Number of Output Channels: 2
- Peak Output Current: 8 amps
- Switching Frequency: 100000 Hz
- Production Status: Full Production
Supplier: MDC Vacuum Products LLC
Description: No Description Provided
- Applications: Semiconductor/Thin Film
- Style / Mounting: Rack Mount
- AC Input Voltage: 208 VAC, Other
- Input Frequency: 50 Hz, 60 Hz, Other
Supplier: Coilcraft CPS
Description: • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For 1011 and 2011, isolation between secondaries is 500 Vdc.
- Operating Frequency Range: 50000 to 2.00E6 Hz
- DCR: 1.4 ohms
- Output Voltage: 500 volts
- Operating Temperature: -67 to 257 F
Description: solder processes Typical Applications* • freewheeling diode for IGBT • particularly suitable for frequencies < 8 kHz
- Diode Type: Other
- VF: 1.77 volts
- IF: 7.00E10 nA
- IR: 6.00E6 nA
Supplier: GE Digital Energy
Description: and corrective services, training, and application expertise. Features & Benefits Topology: True on-line, double conversion (VFI) with integral full load static switch and internal maintenance bypass Technology: Advanced IGBT with SVM strategy, microprocessor controlled at optimal switching frequency
- Technology: On-line (Double-conversion)
- Protection: Lightning, Surge
- Interfaces: Serial
- Volt-Amp Rating: 10000 to 750000 VA
Supplier: Dynapower Corporation
Description: on the incoming power grid and design power factor correction and harmonic filtering as required. Dynapower designs and manufactures both thyristor (SCR) rectifiers and fast switching IGBT chopper rectifiers for large applications. With the latest techniques in both rectifier technologies, our
- Style: Cabinet
Supplier: Mesta Electronics, Inc.
Description: efficiency of over 97% helping to reduce production costs Advanced front panel/LCD display allows for monitoring of operating conditions Uninterruptible units with built-in battery back-up available Dual output systems available for multi-coil applications Utilizes IGBT based inverter switching
- Style: Enclosed, Wall Mount
- Features: Computer Interface, Over Current Protection, Short Circuit Protection
- Applications: Other
- Operating Temperature: 32 to 104 F
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ROHM Semiconductor USA, LLC
New Gate Drivers for High-speed Switching
ROHM Semiconductor introduces new gate drivers featuring a super compact package with built-in isolation by combining the company's original Bi-CDMOS technology with innovative proprietary ‘On-chip transformer' technology. The devices come in two different line-ups, the BM6001x family for easy designs and the more complex BM610xFV family offering comprehensive protection functionalities. Each family provides high-efficiency, low power operating and high speed switching... (read more)
Browse Gate Drivers Datasheets for ROHM Semiconductor USA, LLC
Infineon Technologies AG
Low Vce(sat) 650V TRENCHSTOP™ 5 L5
Features. Lowest saturation voltage V CE(sat) of only 1.05V. Low switching losses of 1.6mJ @ 25 °C for 30A IGBT. High thermal stability of electrical parameters - only 2% drift with T j increase from 25 °C to 175 °C. Enhanced efficiency for 20% lower turn on losses in TO-247 4pin Kelvin-Emitter package. . Benefits. Highest efficiency for polarity switches at 50Hz. Longer lifetime and higher reliability of IGBT. High design reliability due to stable  ... (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Infineon Technologies AG
ROHM Semiconductor USA, LLC
Silicon Carbide Power MOSFETs
ROHM ’s silicon carbide power MOSFETs feature on resistance as low as 80 m Ω at 1200V and switching losses that are about 90% less than that of silicon IGBT. High-switching frequency and low-losses allow the use of much smaller magnetics and capacitors and simpler thermal management, resulting in significant reduction in size, weight, and system cost. The SCT2xxxKEC series is rated for 1200V breakdown voltage while SCT2xxxAxx is rated for 650V. SCH2080KEC is the industry ’s... (read more)
Browse Power MOSFET Datasheets for ROHM Semiconductor USA, LLC
4357 - 28 Amp, 3 Phase Motor Drive Hybrid
The MSK 4357 is a 28 Amp, 3 Phase Bridge Smart Power Motor Drive Hybrid with a 500 volt rating. The output switches are Insulated Gate Bipolar Transistors (IGBT's) tailored for high switching speeds. The free-wheeling diodes are the new Fast Recovery Epitaxial Diodes (FRED's) to provide matched current capabilities with the IGBT's and are specified with excellent reverse recovery times at high current ratings. This new smart power motor drive hybrid is compatible with 5v CMOS or TTL logic... (read more)
Browse Power Supplies Datasheets for MSK Products
Mouser Electronics, Inc.
EPCOS CeraLink™ Capacitors
of lower-cost, more robust semiconductors (e.g. high speed IGBT versus MOSFET) through its extremely low ESL and ESR properties. Features such as significantly lower manufacturing complexity, chip areas that are often smaller than superjunction MOSFETs, and high switching frequencies give the latest IGBTs an excellent price-performance ratio. The cost of this type of solution is one third lower than a MOSFET solution. Furthermore, capacitor value, board space, magnetics, heat sink and so... (read more)
Browse Ceramic Capacitors Datasheets for Mouser Electronics, Inc.
Yaskawa America, Inc. - Drives Division
The G7 has the world's first 480V 3-level inverter architecture that eliminates or minimizes the installation problems associated with IGBT switching (very long cable lengths, bearing currents, and common mode currents) and protects the entire motor-drive system. The G7 can be programmed using DriveWorksEZ ™. This is a PC-based, object-oriented, graphical icon, programming tool that is friendly to the user. The G7 / Configured package provides a G7 drive in either a NEMA 12, UL Type 1... (read more)
Browse AC Motor Drives Datasheets for Yaskawa America, Inc. - Drives Division
Dart Controls, Inc.
Line Voltage BLDC Drive From Dart
Dart Controls' 720 Series is a comprehensive offering of line voltage source power brushless DC (BLDC) variable speed motor controls. The 720 Series commutate power into standard 3-phase brushless DC motors. Utilizing 120 VAC for source power, it provides up to 3.1 amperes of continuous current. Available in both open and closed loop versions for BLDC motors with sensor spacings of 60 and 120 degrees. Key Features: > QUIET 17 kHz PWM SWITCHING FREQUENCY. > IGBT POWER DEVICES. > FORWARD... (read more)
Browse Motor Controllers Datasheets for Dart Controls, Inc.
Murata MGJ Series at Digi-Key
devices optimized for use as high-side and low-side gate drivers in IGBT and MOSFET bridge circuit designs. Providing triple output voltages of +15, +5, and +5 VDC, these converters provide optimum switching of IGBT drives for best overall system efficiency. In addition, the outputs are configurable to suit a number of different circuit requirements such as +15 and -5 VDC or +20 and -5 VDC. Both the MGJ3 3 W and the MGJ6 6 W converters are available with a choice of wide input voltages... (read more)
Browse Datasheets for Digi-Key Electronics
Mouser Electronics, Inc.
EPCOS CeraLink SP and LP Capacitors Now at Mouser
with negligible ESL. The CeraLink LP (Low Profile) series targets fast switching systems and can handle voltages up to 650V. The LP series features high ripple current capability and low ESR and ESL, resulting in low power losses for high frequency systems of up to several MHz. The CeraLink LP series is RoHS compliant and features copper inner electrodes and silver outer electrodes with a silver coated copper lead frame with an epoxy resin adhesive. These capacitors target industrial power converters... (read more)
Browse Capacitors Datasheets for Mouser Electronics, Inc.
Conduct Research Top
Design Considerations to Increase Power Density in Welding Machines Converters Using TRENCHSTOP(TM)5 IGBT
The demand for portable low cost welding machines, especially in developing countries, is increasing. In the Manual Metal Arc and Tungsten Inergt Gas types, in power range from 1,5kW up to 5kW, discrete IGBTs and MOSFETs are broadly used. Mostly, these machines use hard switching current mode PWM
Reducing Inductance in Power Distribution Systems
The traditional solution for distributing power within an electronic system has been with cables or cable harnesses. The standard wiring solutions are fabricated with individual conductors or conductors bundled together to make an assembly. The high frequency switching applications (IGBT technology
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Experimental results from droop compensation for the high voltage converter modulators
Output voltage as a function of IGBT switching frequency with a constant DC bus of +/- 1000 V.
Unity power factor boost converter with phase shifted parallel IGBT operation for medium power applications
Since operating frequency is ilicreased by integer multiples of IGBT switching frequency , the Same core size for the boost inductor can be used to transfer larger amounts of power at the expense of additional power switchingelements and a simple pulse separation circuit.
ISA MOTOR DRV - Motors and Drives - A Practical Technology Guide
This condition can be exaggerated by higher IGBT switch frequencies and the lack of output snubber circuits.
Status and Needs of Power Electronics for Photovoltaic Inverters
• Flexible for multiple system parallel operation • DC bus voltage: 750 V ± 50 V • IGBT switching frequency : 5 kHz, equivalent inverter switching frequency: 10 kHz • Inverter efficiency: > 98.5 % @ 400 kW • Minimized switching ripples and …
Novel Power Electronics Systems for Wind Energy Applications: Final Report; Period of Performance: August 24, 1999 -- November 30, 2002
The converter operated with an IGBT switching frequency of 50 kHz; the asynchronous control update rate of the microcontroller was approximately 10 kHz.
The dominant harmonics at Eagle Pass were 1.26 kHz (21st , IGBT switching frequency ), .
Very high performance AC/DC/DC converter architecture for traction power supplies
The IGBTs switching frequency has been here kept limited, at 3.3kHz for our application case, in order to keep limited the semiconductor losses and, in order to verify the possibility to reduce the size of the input inductor (Ls) two operation …
Unsymmetrical gate voltage drive for high power 1200V IGBT4 modules based on coreless transformer technology driver
Finally, the maximum IGBT switching frequency , fs, for a specific driver design can be calculated using formula (9) as function of Pdis and module parameters .
High-Frequency Leakage Currents in Medium Power Adjustable Speed Drives supplied from IT Mains
In drive applications the IGBT switching frequency is usually equal to 3 - 4.5 kHz.
Electrothermal simulation of an IGBT PWM inverter
The simulation of Fig. 6 is for a relatively low IGBT switching frequency (900 Hz) to illustrate the behavior of the circuit.
A PWM Strategy for Acoustic Noise Reduction for Grid-Connected Single-Phase Inverters
If the carrier frequency is 10 kHz, the IGBT switching frequency is then 10 kHz; however, the current ripple frequency and thus the noise frequency are both 20 kHz.
A new AC/AC multilevel converter family
With respect to the necessary IGBT switching frequency , it can be shown that it is significantly lower than the resulting PWM frequency at the terminals.
Technological Innovation for Cloud-Based Engineering Systems
The IGBTs switching fre- quency is 10 KHz.
A 6.6‐kV transformerless STATCOM based on a five‐level diode‐clamped converter. Experiments using a three‐phase laboratory model rated at 200 V and 10 kVA
of the five-level converter is set to 3 kHz, then the IGBT switching frequency is 500 to 1000 Hz.