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Description: tail current with low temperature dependence Low treshold voltage Typical Applications Switching (not for linear use) High Frequencies Applications Welding generator Switched mode power supplies UPS
- Polarity: N-Channel
- VCES: 600 volts
- VCE(on): 2 volts
- IC(max): 62 amps
Supplier: Spectral Dynamics, Inc.
Description: cooling unit. Wide Useable Frequency Band The high performance shaker powered by an efficient DA-120 switching power amplifier operates over a useful frequency range from 5 to 2,300 Hz. The amplifier is designed using the latest IGBT module Technology. High Fundamental Resonant Frequency A unique
- Peak Sinusoidal Force: 26460 lbs
- Frequency Range: 5 to 2300 Hz
- Peak Acceleration: 120 g
- Technology: Electrodynamic
Supplier: Fairchild Semiconductor
Description: Fairchild offers high voltage gate-drive (HVICs) which improve system reliability through the implementation of an innovative noise canceling circuit that provides excellent noise immunity. These industry-leading MOSFET & IGBT Gate Driver solutions are ideal for a wide range of applications
- Driver Type: Low-side Gate Driver
- Number of Output Channels: 2
- Output Configuration: Inverting
- Supply Voltage: 60 volts
Supplier: M.S. Kennedy Corp.
Description: The MSK 4470 is a complete 3 Phase IGBT Bridge Brushless Motor Control System in a convenient isolated baseplate package. The hybrid is capable of 10 amps of output current and 500 volts of DC bus voltage. It has the normal features for protecting the bridge. Included is all the bridge drive
- Driver Type: Three-phase
- Number of Output Channels: Other
- Output Configuration: Noninverting
- Peak Output Current: 15 amps
Supplier: Mesta Electronics, Inc.
Description: efficiency of over 97% helping to reduce production costs Advanced front panel/LCD display allows for monitoring of operating conditions Uninterruptible units with built-in battery back-up available Dual output systems available for multi-coil applications Utilizes IGBT based inverter switching
- Phase: Three Phase
- Applications: OEM / Custom, Other
Supplier: MDC Vacuum Products LLC
Description: No Description Provided
- Applications: Semiconductor/Thin Film
- Style / Mounting: Rack Mount
- AC Input Voltage: 208 VAC, Other
- Input Frequency: 50 Hz, 60 Hz, Other
Description: voltage up to 4kVAC) Switching frequency of up to 100kHz and duty cycle 0…1 Gate resistor for turn-on and turn-off separately adjustable optimisation of IGBT performance in various applications
- Number of Output Channels: 2
- Peak Output Current: 15 amps
- Switching Frequency: 50000 Hz
- Production Status: Full Production
Description: solder processes Typical Applications* • freewheeling diode for IGBT • particularly suitable for frequencies < 8 kHz
- Diode Type: Other
- VF: 1.77 volts
- IF: 7.00E10 nA
- IR: 6.00E6 nA
Supplier: Dynapower Corporation
Description: on the incoming power grid and design power factor correction and harmonic filtering as required. Dynapower designs and manufactures both thyristor (SCR) rectifiers and fast switching IGBT chopper rectifiers for large applications. With the latest techniques in both rectifier technologies, our
- Style: Cabinet
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ROHM Semiconductor USA, LLC
Silicon Carbide Power MOSFETs
ROHM ’s silicon carbide power MOSFETs feature on resistance as low as 80 m Ω at 1200V and switching losses that are about 90% less than that of silicon IGBT. High-switching frequency and low-losses allow the use of much smaller magnetics and capacitors and simpler thermal management, resulting in significant reduction in size, weight, and system cost. The SCT2xxxKEC series is rated for 1200V breakdown voltage while SCT2xxxAxx is rated for 650V. SCH2080KEC is the industry ’s... (read more)
Browse Power MOSFET Datasheets for ROHM Semiconductor USA, LLC
a co-packed diode optimized for fast switching. The field stop trench IGBT series also allows designers to operate devices at higher switching frequencies than competitive solutions, helping to reduce the size and cost of the capacitors and inductive components in the circuit. This results in system designs with higher power density, smaller size and lower bill of material costs. This IGBT series is 100 percent tested for clamped inductive switching at current levels of four times the rated... (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Fairchild Semiconductor
M.S. Kennedy Corp.
4357 - 28 Amp, 3 Phase Motor Drive Hybrid
The MSK 4357 is a 28 Amp, 3 Phase Bridge Smart Power Motor Drive Hybrid with a 500 volt rating. The output switches are Insulated Gate Bipolar Transistors (IGBT's) tailored for high switching speeds. The free-wheeling diodes are the new Fast Recovery Epitaxial Diodes (FRED's) to provide matched current capabilities with the IGBT's and are specified with excellent reverse recovery times at high current ratings. This new smart power motor drive hybrid is compatible with 5v CMOS or TTL logic... (read more)
Browse Power Supplies Datasheets for M.S. Kennedy Corp.
Mouser Electronics, Inc.
STMicroelectronics High Speed Trench Gate IGBTs
STMicroelectronics High Speed Trench Gate IGBTs are developed using an advanced proprietary trench gate and field stop structure. These devices represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Typical applications include induction heating. microwave oven, resonant converters... (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Mouser Electronics, Inc.
Yaskawa America, Inc. - Drives Division
The G7 has the world's first 480V 3-level inverter architecture that eliminates or minimizes the installation problems associated with IGBT switching (very long cable lengths, bearing currents, and common mode currents) and protects the entire motor-drive system. The G7 can be programmed using DriveWorksEZ ™. This is a PC-based, object-oriented, graphical icon, programming tool that is friendly to the user. The G7 / Configured package provides a G7 drive in either a NEMA 12, UL Type 1... (read more)
Browse AC Motor Drives Datasheets for Yaskawa America, Inc. - Drives Division
Dart Controls, Inc.
Line Voltage BLDC Drive From Dart
Dart Controls' 720 Series is a comprehensive offering of line voltage source power brushless DC (BLDC) variable speed motor controls. The 720 Series commutate power into standard 3-phase brushless DC motors. Utilizing 120 VAC for source power, it provides up to 3.1 amperes of continuous current. Available in both open and closed loop versions for BLDC motors with sensor spacings of 60 and 120 degrees. Key Features: > QUIET 17 kHz PWM SWITCHING FREQUENCY. > IGBT POWER DEVICES. > FORWARD... (read more)
Browse Motor Controllers Datasheets for Dart Controls, Inc.
Eaton | Power Quality
Eaton 9155 UPS w/ Network Monitoring Software!
Sync paralleling of multiple modules for redundancy or extra capacity, ensuring that critical systems are always protected. Additional Features & Benefits. The double-conversion online design of this "9-series" UPS completely isolates equipment from utility power to protect against all nine of the most common power problems, including outages, sags, surges, spikes, brownouts, line noise, frequency variation, switching transients, and harmonic distortion. A high 0.9 output power factor... (read more)
Browse Single Phase Uninterruptible Power Supplies (UPS) Datasheets for Eaton | Power Quality
Conduct Research Top
Using NEC Optocouplers as Gate Drivers in IGBT and Power MOSFET Applications
to the. • High-speed switching (tPLH/ tPHL = 0.5µs max). MOSFET/IGBT gate charge, based on the desired switch-. • ). ing frequency to turn on and off the MOSFET / IGBT. Large operating voltage range (VCC–VEE = 15–30 V). Qg. • Built-in UVLO (Under-Voltage Lock Out) function. VO. 2. PS9552 Overview. • High
Reducing Inductance in Power Distribution Systems
The traditional solution for distributing power within an electronic system has been with cables or cable harnesses. The standard wiring solutions are fabricated with individual conductors or conductors bundled together to make an assembly. The high frequency switching applications (IGBT technology
The Power of Green: Mitsubishi 9900A Series High Efficiency True On-Line Double Conversion Uninterruptible Power Supply (UPS) (.pdf)
that with the. development: 480V and 575/600V classification is being. emergence of the IGBT power device due to the need for. considered. higher. switching. frequencies. in. power. electronic. applications,. the. desire. for. substantially. lower. A. Three-Level Converter Topology. semiconductor switching losses
Introduction to Solid State Pipe & Tube Welding Systems (.pdf)
their usefulness to frequencies below 100 kHz. While IGBTs can be operated as. high as 150 kHz, the switching losses reduce their ratings to be comparable with FETs. There is no. particular advantage in using them in designs operating above 100 kHz And above 150 kHz their use is. impractical
Building a Reliable VFD System (.pdf)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6. insulated gate bipolar transistor (IGBT) technology, creates the variable voltage and frequency. output that will control the motor’s speed. A microprocessor in the VFD, with programming. resident in firmware, governs the overal operation
Shaft grounding for inverter driven motors
. shaft current in AC motors. The switching frequen-. discharges, causing electrical discharge machining. cies of insulated-gate bipolar transistors (IGBT) used. (EDM) pits and fusion craters in the race wall and ball. in these drives produce voltages on the motor shaft. bearings. This phenomenon
VF Control of 3-Phase Induction Motors Using PIC16F7X7 Microcontrollers
with the application code and. their time base for setting the switching frequency and. transferred to the data memory upon initialization. duty cycle, all will have the same switching frequency. Loading the table this way minimizes access time. To derive a varying 3-phase AC voltage from the DC. during
Inverters Reduce Manufacturing Costs (.pdf)
. that all of our readers have a clear understanding. latest power switching devices, IGBT’s, in such. voltage mentioned earlier. of the theory of Inverter technology this first. “Connections” will deal with the fundamentals. of this technology. INVERTERS MEET THE NEED FOR. IMPROVED CONTROL. All
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Experimental results from droop compensation for the high voltage converter modulators
Output voltage as a function of IGBT switching frequency with a constant DC bus of +/- 1000 V.
Unity power factor boost converter with phase shifted parallel IGBT operation for medium power applications
Since operating frequency is ilicreased by integer multiples of IGBT switching frequency , the Same core size for the boost inductor can be used to transfer larger amounts of power at the expense of additional power switchingelements and a simple pulse separation circuit.
Measurement of IGBT switching frequency limits
Measurement of IGBT switching frequency limits .
ISA MOTOR DRV - Motors and Drives - A Practical Technology Guide
This condition can be exaggerated by higher IGBT switch frequencies and the lack of output snubber circuits.
Status and Needs of Power Electronics for Photovoltaic Inverters
• Flexible for multiple system parallel operation • DC bus voltage: 750 V ± 50 V • IGBT switching frequency : 5 kHz, equivalent inverter switching frequency: 10 kHz • Inverter efficiency: > 98.5 % @ 400 kW • Minimized switching ripples and...
Novel Power Electronics Systems for Wind Energy Applications: Final Report; Period of Performance: August 24, 1999 -- November 30, 2002
The converter operated with an IGBT switching frequency of 50 kHz; the asynchronous control update rate of the microcontroller was approximately 10 kHz.
A Study of High Frequency Voltage Effects in Medium Voltage Cable Terminations
The dominant harmonics at Eagle Pass were 1.26 kHz (21st , IGBT switching frequency ), .
Very high performance AC/DC/DC converter architecture for traction power supplies
The IGBTs switching frequency has been here kept limited, at 3.3kHz for our application case, in order to keep limited the semiconductor losses and, in order to verify the possibility to reduce the size of the input inductor (Ls) two operation...