InGaAs Photodiode

Featured Products for InGaAs Photodiode Top

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  OSI Optoelectronics
  Large Area Photodiodes
  -3000-X come with different shunt resistance values of 5, 10, 20, 30 and 40 M Ω. Features. High Responsivity. Large Active Area Diameter. Low Noise. Spectral Range 900nm to 1700nm Applications. Optical Instrumentation. Power Measurement. IR Sensing. Medical Devices. Other InGaAS Photodiodes: Quadrant Photodiode. Back Illuminated Photodiode Arrays... (read more)
  Browse Photodiodes Datasheets for OSI Optoelectronics
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  OSI Optoelectronics
  Back Illuminated Photodiode Arrays
  FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They come standard in a single element diode or 4 - or 8- elements array with active area of 300µm. These back illuminated InGaAs photodiode/arrays are designed to be flip chip mounted (active area facing up), or assembled face down minimizing the overall dimensions. These low inductance, low dark current, and low capacitance back illuminated photodiode /arrays come with ot without ceramic substrates. FEATURES... (read more)
  Browse Photodiodes Datasheets for OSI Optoelectronics
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  Marktech Optoelectronics
  InP/InGaAs Epitaxial Wafers for PD and PD Arrays
  One of the many technologies that Marktech has recently introduced are customized 1.7 µm InP/InGaAs Epitaxial Wafers for use in PIN Photodiodes, APD and PD arrays. Based on the application needs, these high speed, high sensitivity wafers can be offered in a number of array and aperature sizes. Custom PD Array Capability Ranges: Cell Active Area:  40 µm x 40 µm. Pitch: 50 µm. 1D array: 2 x 64 (390 µm x 3531 µm);  2 x 128 (390 µm x 6960 µm... (read more)
  Browse Photodiodes Datasheets for Marktech Optoelectronics
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  OSI Optoelectronics
  800 nm Silicon Avalanche Photodiode Series
  nbsp; a division of OSI Systems, is the global leader in design and manufacture of high performance standard, custom, and OEM silicon and InGaAs photodiodes.   For over 40 years, we have developed and manufactured OEM and custom solutions for leading technologies and industries.   We provide advanced optoelectronic components and sub-assemblies for aerospace and defense, security, inspection systems, medical, communications, and industrial automation applications.  .  ... (read more)
  Browse Photodiodes Datasheets for OSI Optoelectronics
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  Marktech Optoelectronics
  InP / InGaAs Epitaxial Wafers 1.7µm, 2.2µm, 2.6µm
  Marktech Optoelectronics offers the highest purity InP/InGaAs Epiwafers in the industry today. Sophisticated manufacturing processes have been put in place to customize and produce high quality Inp/InGaAs Epitaxial wafers on 2, 3 and  4 inch platforms with wavelengths up to  2.6 µm, ideally suited for high speed long wavelength imaging, high speed HBT and HEMTs, APDs and analog-digital converter circuits. Applications using InP-based components can greatly exceed transmission... (read more)
  Browse Photodiodes Datasheets for Marktech Optoelectronics
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  Advanced Photonix, Inc.®
  InGaAs Photodetectors
  Indium Gallium Arsenide (InGaAs) PIN photodiodes are detectors with a spectral response range of 0.9 µm – 1.7 µm, deliver high-speed response and low noise due to a low terminal capacitance and a large shunt resistance. In addition to these larger active devices, API also offers a wide range of high-speed (10 Gbit – 40 Gbit) InGaAs fiber coupled receivers through our Picometrix subsidiary (see III-V Optical Receivers). Picometrix is the world's leader in providing high performance... (read more)
  Browse Photosensor Modules Datasheets for Advanced Photonix, Inc.®
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  Excelitas Technologies Corp.
  LLAM Series Si/InGaAs Low-Light Analog APD Modules
  The LLAM series modules are specifically designed for the detection of high-speed, low-light analog signals.   The Si APDs used in these devices are the same as used in Excelitas ’ C30902EH and C30954EH products, while the InGaAs APDs are used in the C30645EH and C30662EH products. These detectors provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths.   The preamplifier section of the module uses a very low noise GaAs FET front... (read more)
  Browse Photodiodes Datasheets for Excelitas Technologies Corp.
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  Hamamatsu Corporation USA
  Infrared Detectors
  Hamamatsu offers a wide variety of high-sensitivity detectors for measuring NIR and mid-IR absorption, transmission, emission, and reflectance. They are suitable for many applications including gas analysis, NIR/IR/FTIR spectroscopy, water content measurement, laser diode monitoring, flame monitoring, film thickness measurement, thermal imaging, and remote sensing.  Detectors for 0.9-2.6 µm: InGaAs PIN photodiodes. InGaAs image sensors and photodiode arrays. InGaAs mini-spectrometers... (read more)
  Browse Infrared Spectrometers Datasheets for Hamamatsu Corporation USA
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  StellarNet, Inc.
  Raman Spectrometers for Sample ID
  StellarNet released a new series of spectrometers configured for Raman spectroscopy applications that perform quick identification of a variety of liquid, solid, or powder samples. StellarNet Raman  spectrometers include enhanced CCD array detectors for 785nm Raman (other wavelengths available on request) or cooled 1024 element InGaAs photodiode arrays for 1064nm Raman where interference from sample fluorescence is minimized and virtually non-existent. As always with StellarNet... (read more)
  Browse Spectrometers Datasheets for StellarNet, Inc.
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  Arcoptix S.A
  NIR Spectrometer
  The FT-NIR Rocket is a family of scanning Fourier Transform Spectrometers that is based on a compact and robust design. Because of its sealed self-compensated interferometer and  temp. stabilzed solid state reference laser,  this new generation of FT-NIR has a minimal senstitivity to vibrations and temperature fluctuations. The FTIR-Rocket is equipped with a signle InGaAs photodiode with a sensitivity up to 2.6 μm detectors for optimal sensitivity. Standard models are fiber... (read more)
  Browse Infrared Spectrometers Datasheets for Arcoptix S.A