InGaAs Pin

Featured Products for InGaAs Pin Top

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  Marktech Optoelectronics
  High Speed InGaAs PIN Diode 1.7µm
  InGaAs PIN photo diodes are near infrared detectors that feature low noise, high sensitivity and high-speed response. Marktech introduces the newest series of these PIN diodes packaged in a TO-46 metal can with active areas from .03mm to 1.5mm. Applications include Optical Communication Devices such as receivers, sensors and high speed fiber modules. Standard spectral range of the PiN diode series is 0.9um to 1.7um.  These parts offer considerable speed improvements over the current  ... (read more)
  Browse Light Emitting Diodes (LED) Datasheets for Marktech Optoelectronics
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  Advanced Photonix, Inc.®
  InGaAs Photodetectors
  Indium Gallium Arsenide (InGaAs) PIN photodiodes are detectors with a spectral response range of 0.9 µm – 1.7 µm, deliver high-speed response and low noise due to a low terminal capacitance and a large shunt resistance. In addition to these larger active devices, API also offers a wide range of high-speed (10 Gbit – 40 Gbit) InGaAs fiber coupled receivers through our Picometrix subsidiary (see III-V Optical Receivers). Picometrix is the world's leader in providing high performance... (read more)
  Browse Photosensor Modules Datasheets for Advanced Photonix, Inc.®
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  Hamamatsu Corporation USA
  Infrared Detectors
  Hamamatsu offers a wide variety of high-sensitivity detectors for measuring NIR and mid-IR absorption, transmission, emission, and reflectance. They are suitable for many applications including gas analysis, NIR/IR/FTIR spectroscopy, water content measurement, laser diode monitoring, flame monitoring, film thickness measurement, thermal imaging, and remote sensing.  Detectors for 0.9-2.6 µm: InGaAs PIN photodiodes. InGaAs image sensors and photodiode arrays. InGaAs mini-spectrometers... (read more)
  Browse Infrared Spectrometers Datasheets for Hamamatsu Corporation USA
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  Marktech Optoelectronics
  InP/InGaAs Epitaxial Wafers for PD and PD Arrays
  One of the many technologies that Marktech has recently introduced are customized 1.7 µm InP/InGaAs Epitaxial Wafers for use in PIN Photodiodes, APD and PD arrays. Based on the application needs, these high speed, high sensitivity wafers can be offered in a number of array and aperature sizes. Custom PD Array Capability Ranges: Cell Active Area:  40 µm x 40 µm. Pitch: 50 µm. 1D array: 2 x 64 (390 µm x 3531 µm);  2 x 128 (390 µm x 6960 µm... (read more)
  Browse Photodiodes Datasheets for Marktech Optoelectronics
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  Microwave Photonic Systems, Inc.
  RF/Fiber Optic Receiver
  distortion InGaAs PIN photodiode detector that is mated to a singlemode optical fiber. Features: - RS Protocol- 232/422/485 Options - High Spur Free Dynamic Range - Extremely Low Noise DFB Laser - Optical and Thermal Stabilization - Internal Optical Isolator - Signal Monitoring and Alarm Capability - Uni-Polar Power Supply. Specifications: Frequency Range: MP-5000L(A): 1.0 MHz to 12 GHz, (min.) MP-5000L(B): 1.0 MHz to 6 GHz, (min.) MP-5000L(C): 1.0 MHz to 3 GHz, (min.) Amplitude Flatness: +/- 2.0 dB... (read more)
  Browse Fiber Optic Receivers Datasheets for Microwave Photonic Systems, Inc.