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Ion Implantation Thermal Treatments

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  • Ion Implantation
    (As) or antimony (Sb). A subsequent annealing treatment or thermal cycle is required to drive the implanted ions into the surface. Ion implantation can also be used to form wear resistant layers....
  • MICRO: TechEmergent
    Alex Salnik, Lena Nicolaides, and Jon Ospal, combination of ion implantation and thermal annealing, which are both silicon surface modification methods, is a key production process in semiconductor manufacturing. Thermal-wave (TW) technology measures surface modification (i.e., "damage") induced...
  • MICRO: Green Manufacturing
    sputter silicon or silicon dioxide (SiO ) from the wafer substrate and deposit residues on top of the resist. In addition, implant species can penetrate into the resist, causing the formation of a resist crust and other residues. Therefore, following ion implantation, the resist should be removed...
  • MICRO: Product Technology News (January 2001)
    in the flange area ensures mounting integrity. Ion Implanter. Axcelis Technologies. Beverly, MA. The MC3 medium-current ion implantation system for 300-mm semiconductor manufacturing is designed to meet both existing and future manufacturing requirements. The fully automated serial processing implanter...
  • Eliminating heavily implanted resist in sub-0.25-um devices
    will create significant technical and economic hurdles for the IC industry as technology enters the sub-0.25-um generations. Technology Roadmap Considerations The energy applications required to support the next three CMOS technology nodes (0.25, 0.18, and 0.15 um) in ion implantation have migrated...
  • MICRO:April 98:Product Technology News
    to 0.1% oxygen. Another model with a reading down to 0.1 ppm is available for critical applications. A rugged calibration knob, carrying strap, and a purging guide are standard features. CIS series closed ion gas analyzers provide a detection limit of 1 ppm for all gases and direct sampling...
  • MICRO:Archive:Back Issue TOC
    process controller, yield analysis software, gloves, noncontact measurement station, and microcleaving system Product Extra!: Tool company reaches second level in software capability model; ion implantation gases marketed as safe delivery source products; on-line vacuum store provides extensive data...
  • MICRO: Product Technology News (October 2000)
    . Plasma doping allows high productivity at low energies. In addition, the absence of ion-beam deceleration eliminates energy contamination that can affect device yields. By integrating the processes of particle acceleration, chemisorption, and recoil implantation, the plasma doping system produces...
  • MICRO:Product Technology News (Jan '99)
    at a scattered light detection level of 0.001 ppm/sr. In addition to defects caused by polishing, cleaning, and lapping, the system detects deposition-related flaws and defects introduced during processes such as ion implantation. Pressure Regulator Valcor Engineering Springfield, NJ Suitable...
  • MICRO:Top 40 (Nov '99)
    minutes at a scattered light detection level of 0.001 ppm/sr. In addition to defects caused by polishing, cleaning, and lapping, the system detects deposition-related flaws and defects introduced during processes such as ion implantation. Chemical Filter domnick hunter Durham, England The latest...

Engineering Web Search: Ion Implantation Thermal Treatments

Microelectromechanical systems - Wikipedia, the free...
2.2.1.3 Ion beam lithography 2.2.1.4 Ion track technology electrostatics and wetting dominate volume effects such as inertia or thermal mass.
Glass - Wikipedia, the free encyclopedia
The lower CTE also makes them less subject to stress caused by thermal expansion, thus less vulnerable to cracking from thermal shock.
Formation of Si-based light-emitting structures by ion...
Formation of Si-based light-emitting structures by ion implantation and pulsed treatments
Towards p-type doping of ZnO by ion implantation
Meeting of the IEEE Item Title: Towards p-type doping of ZnO by ion implantation Shortened Title: LEOS annual meeting ISBN: 0-7803-9217-5 Publisher
Cr ion implantation into Ti Part I. Formation of intermetallic...
Title: Cr ion implantation into Ti Part I. Formation of intermetallic Laves phase Authors: L.M. Prudêncio, L. Paramês, O. Conde, R.C. da Silva
Ion implantation of Cs into silicon carbide: Damage production...
Ion implantation of Cs into silicon carbide: Damage production and diffusion behaviour
Symposium J: Submission ID 43431 time 9:35 pm, Oct-30-00...
Avenue, Murray Hill, NJ. Following high-energy and/or high-dose ion implantation into silicon, a vacancy-rich region can be observed close to the
See Oak Ridge National Laboratory Information
Semiconductor Manufacturing - Main Index
Basic operations of wafer fabrication, Doping, Heat treatments, Layering, Patterning, Chip Design, Packaging, Regions of a wafer surface, Edge Die,
ECS Transactions, 16 (8) 251-262 (2008) 10.1149/1.2982876 ?...
Ion slicing consists of hydrogen (H) and/or helium (He) ion implantation into a donor wafer before bonding it to a handle wafer.
TRANSISTOR PERFORMANCE USING A TWO-STEP DAMAGE ANNEAL - Patent...
1. A method of thermal treating a semiconductor device, comprising:performing ion implantation in a silicon substrate of the semiconductor

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