IR Receiver Photodiodes

Description: PHOTODIODE, IR RECEIVER, 36KHZ

• Features: RoHS
• Form Factor / Package: Surface Mount Technology (SMT), Other
• Operating Frequency: 0.0360 MHz
• Operating Temperature: -25 C

Description: The FCI-GaAs-XXm is a 4 or 12 element GaAs PIN photodetector array designed for high speed fiber receiver and monitoring applications. The 70µm diameter elements are capable of 2.5Gbps data rates. AR coated and sensitive to telecommunication wavelengths, this array is a perfect

• Active Area Diameter or Length: 0.0700 mm
• Dark Current: 0.0300 nA
• Operating Temperature: -40 to 85 C
• PN, PIN, or Avalanche: PIN Photodiode

Description: transimpedance amplifier producing a differential output voltage for latching to post amplifiers used in electro-optical receivers and transceivers for gigabit ethernet and Fiber Channel applications up to 1.25Gbps over multi-mode fiber. The photodetector converts the light into an electrical

• Active Area Diameter or Length: 0.2500 mm
• Operating Temperature: -40 to 75 C
• PN, PIN, or Avalanche: PIN Photodiode
• Photodiode Material: Silicon

Description: speed and superior sensitivity make these devices ideal for high-bit rate receivers used in LAN, MAN, WAN and other high speed communication systems. TO packages come standard with a lensed cap to enhance coupling efficiency, or with a broadband double sided AR coated flat window. The

• Active Area Diameter or Length: 0.0700 mm
• Operating Temperature: -40 to 85 C
• PN, PIN, or Avalanche: PIN Photodiode
• Photodiode Material: Indium Gallium Arsenide

Description: conditions for high speed signal amplification. Low capacitance, low dark current and high responsivity from 650nm to 860nm make these devices ideal for high-bit rate receivers used in LAN, MAN, and other high speed communication systems. TO packages come standard with a lensed cap to enhance

• Active Area Diameter or Length: 0.1000 mm
• Operating Temperature: 0.0 to 75 C
• PN, PIN, or Avalanche: PIN Photodiode
• Photodiode Material: Other

Description: The LLAM-900-R5BH is a high-speed, low-light analog Avalanche Photodiode (APD) Receiver with a 0.5 mm active diameter in a hermetically-sealed package. This Si APD Receiver features a thermoelectric cooler and offers a bandwidth of 200 MHz.

• Active Area Diameter or Length: 0.5000 mm
• PN, PIN, or Avalanche: Avalanche Photodiode
• Photodiode Material: Silicon
• Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)

Description: The LLAM-1060E-R8BH High-speed, low-light analog avalanche photodiode (APD) receiver module with a 1060 nm Silicon (Si) APD. Featuring a thermoelectric cooler, this Si APD provides a 0.8 mm active diameter and a bandwidth of 200 MHz.

• Active Area Diameter or Length: 0.8000 mm
• PN, PIN, or Avalanche: Avalanche Photodiode
• Photodiode Material: Silicon
• Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)

Description: The LLAM-1060-R8BH is a high-speed, low-light analog silicon avalanche photodiode (Si APD) receiver module with a 1060 nm Si APD. Featuring a thermoelectric cooler, this Si APD provides a 0.8 active diameter and a bandwidth of 200 MHz. Applications: Laser range finding

• Active Area Diameter or Length: 0.8000 mm
• PN, PIN, or Avalanche: Avalanche Photodiode
• Photodiode Material: Silicon
• Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)

Description: The LLAM-1550E-R08BH is a high-speed, low-light analog avalanche photodiode (APD) receiver with an active diameter of 0.08 mm and features a thermoelectric cooler.

• PN, PIN, or Avalanche: Avalanche Photodiode
• Photodiode Material: Indium Gallium Arsenide
• Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
• Rise Time: 7 ns

Description: MACOM offers the highest sensitivity photodiodes for receiver applications from 2.5G up to 400G. The product portfolio includes APDs and PINs with industry leading performance and reliability. Our photodiode chips have superior bandwidth and temperature stability and are

• PN, PIN, or Avalanche: Avalanche Photodiode
• Photodiode Package / Mounting: Bare Die, Surface Mount Technology (SMT)
• Sensitivity: 0.8000 to 0.9000 A/W
• Spectral Response: IR

Description: IR (INFRARED) RECEIVER SENSOR -

• Operating Temperature: -25 to 85 C
• Photodiode Package / Mounting: Through Hole Technology (THT)

Description: IR RECEIVER - PRESENCE SENSING -

• Operating Temperature: -25 to 85 C
• Photodiode Package / Mounting: Surface Mount Technology (SMT)

Description: IR RECEIVER - PRESENCE SENSING -

• Operating Temperature: -25 to 85 C
• Photodiode Package / Mounting: Surface Mount Technology (SMT)

Description: IR RECEIVER - PRESENCE SENSING -

• Operating Temperature: -25 to 85 C
• Photodiode Package / Mounting: Surface Mount Technology (SMT)

Description: IR (INFRARED) RECEIVER SENSOR -

• Operating Temperature: -25 to 85 C

Description: IR RECEIVER - HEIMDALL PACKAGE -

• Operating Temperature: -25 to 85 C

Description: The NR4510 Series is an InGaAs 2.5 Gb/s APD ROSA with an internal pre-amplifier in a receptacle type package designed for SFP transceiver with LC duplex receptacle ideal as a receiver for OC-48 applications.

• Active Area Diameter or Length: 0.0500 mm
• Dark Current: 500 nA
• Operating Temperature: -40 to 85 C
• PN, PIN, or Avalanche: Avalanche Photodiode

Description: The NR4512 Series is an InGaAs 2.5 Gb/s APD ROSA with an internal pre-amplifier in a receptacle type package designed for SFP transceiver with LC duplex receptacle ideal as a receiver for OC-48 applications.

• Active Area Diameter or Length: 0.0500 mm
• Dark Current: 500 nA
• Operating Temperature: -40 to 85 C
• PN, PIN, or Avalanche: Avalanche Photodiode

Description: IR RECEIVER MOD 38KHZ TSOP6438

Description: IR SENSOR 38KHZ

• Operating Temperature: -25 to 85 C

Description: receiver output, respectively. The MAX3131's IrDA transceiver and RS-232 transceivers are separate and have their own data inputs and outputs. Both these devices require a minimum of external components: four small 0.1µF capacitors, a photodiode, an infrared LED, and a

• Device Type / Applications: Transceiver, Other
• IC Package Type: SSOP
• Pin Count: 28 #
• RoHS Compliant: Yes

Description: holder for RTC backup. 2.048V voltage reference. 8Mbit SPI serial Flash memory. 480 x 272 LCD TFT touchscreen display. USB Mini-B Host/Device connector. RF transceiver with 2.4GHz chip antenna and SPI serial interface. Ethernet transceiver. Piezo buzzer. PIN photodiode. IR

• Bus Width: 32-Bit
• Category: Development Suite / Kit
• Supported System: Other

Description: serial Flash memory. 480 x 272 LCD TFT touchscreen display. MCP23S17 16-bit I/O SPI serial port expander. USB Mini-B Host/Device connector. RF transceiver with 2.4GHz chip antenna and SPI serial interface. Ethernet transceiver. Piezo buzzer. PIN photodiode. IR receiver. RGB LED.

• Category: Development Suite / Kit
• Supported System: Other

Description: This family of PIN photodiodes, from OSRAM Opto Semiconductors, are in SMR® packages. They have a radiant sensitive area of 1 x 1 mm² and come with or without daylight filter. . Spectrums Detected = Infrared, Visible Light Wavelength of Peak Sensitivity = 850nm Package Type

• Photodiode Material: Silicon
• Photodiode Package / Mounting: Surface Mount Technology (SMT), Other
• Spectral Response: Visible, IR
• Spectral Response Range: 400 to 1100 nm

Description: This family of PIN photodiodes, from OSRAM Opto Semiconductors, have a sensitive area of 2.2 x 2.2 mm². They are available with or without daylight filter. These PIN photodiodes are ideal for high speed applications. Spectrums Detected = Infrared, Visible Light Wavelength of Peak

• Photodiode Material: Silicon
• Photodiode Package / Mounting: Other
• Spectral Response: Visible, IR
• Spectral Response Range: 400 to 1100 nm

Description: EOC offers a variety of silicon photodiode options from IFW Optronics: Silicon Photodiodes with an Integrated Low Noise JFET Amplifier Quadrant Photodiodes

• Active Area Diameter or Length: 2.5 to 7.9 mm
• PN, PIN, or Avalanche: PIN Photodiode
• Photodiode Material: Silicon
• Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)

Description: Two differential pairs of photodiodes with amplifiers The optical sensor IC PR5401 consists of two pairs of photodiodes placed in opposite quadrants with differential amplifiers. If illuminated uniformly, the output is Vcc/2, but depends on the balance of illumination on each pair.

• Array: Yes
• Operating Temperature: -40 to 85 C
• PN, PIN, or Avalanche: PN Photodiode
• Photodiode Material: Silicon

Description: Opto Diode offers high quality standard and custom photodiodes. We have a large variety of standard devices featuring low dark current and low capacitance. For responsivity between 400 -1100 nm, Opto Diode has the perfect photodiode for your application. For more information about

• Dark Current: 0.9000 to 2.5 nA
• Noise Equivalent Power (NEP): 2.50E-14 W/Hz^½
• Operating Temperature: -40 to 125 C
• Photodiode Package / Mounting: Leaded

Description: Visible light solidstate photon detector/counter; 2mm sensor pitch

• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm
• Array: Yes
• Dark Current: 10000 nA

Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time

• Active Area Diameter or Length: 0.2300 mm
• Dark Current: 0.5000 to 1 nA
• PN, PIN, or Avalanche: Avalanche Photodiode
• Photodiode Material: Silicon

Description: Thermal head for average power from 60 um to 10 KW

• Active Area Diameter or Length: 9.6 mm
• Rise Time: 2.50E9 ns
• Spectral Response: UV, Visible, IR
• Spectral Response Range: 190 to 20000 nm

Description: The 61053 is an N-P-N Planar Silicon phototransistor in a small outline package designed to be housing mounted. It is available in a range of sensitivities and is lensed for minimum response to stray light. High sensitivity, low dark current leakage, and low saturation voltage make this device ideal

• Dark Current: 25 nA
• Operating Temperature: -55 to 125 C
• PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
• PSD: Yes

Description: Lead (Pb) free, water clear lens

• Active Area Diameter or Length: 5 mm
• PN, PIN, or Avalanche: PIN Photodiode
• Photodiode Material: Silicon
• Photodiode Package / Mounting: Through Hole Technology (THT)

Description: Dust Sensor IR Detecting Unit for Remote Control Photocoupler Photointerrupter Phototriac Coupler Proximity Sensor Solid State Relay

• Active Area Diameter or Length: 5.3 to 19 mm
• Photodiode Package / Mounting: Surface Mount Technology (SMT)
• Spectral Response: IR

Description: PIN Photodiode in Sidelooker Package, Radiant Sensitive Area 2.65 x 2.65 mm², Half Angle ±65 °, Daylight Filter

• Active Area Diameter or Length: 2.65 mm
• Active Area Height: 2.65 mm
• PN, PIN, or Avalanche: PIN Photodiode
• Photodiode Package / Mounting: Leaded