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Parts by Number for IR Transistor Top

Part # Distributor Manufacturer Product Category Description
IR812 PLC Radwell Smc Not Provided TRANSISTOR
IR2110 ASAP Semiconductor IR Not Provided TRANSISTOR
TRANSISTOR ASAP Semiconductor IR Not Provided Not Provided
IR3415STRLPBF ASAP Semiconductor NEW Not Provided TRANSISTOR
IR94-2011 ASAP Semiconductor NEW Not Provided TRANSISTOR N-MOSFET 200V T0252 REV;122495
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Conduct Research Top

  • IR Remote Control Transmitter
    AN1064 IR Remote Control Transmitter receiver. The IR light then travels through the air and is Author: Tom Perme detected at the receiver by a photo-diode. The photo- John McFadden diode is often contained in a complete module which Microchip Technology Inc. demodulates the modulated signal
  • Cooling High-Density Open-Fram DC/DC Converters
    power density. As efficiency increases, higher power density converters will be introduced. Multilayer PCBs allow the designers to design both magnetics and the control circuitry on a single board thus reducing IR drops and improving reliability and quality while reducing cost. As the power density
  • | Electronics Industry News for EEs & Engineering Managers
    with static or "semi-dynamic " transistor-level analysis, ACAD Corp. is rolling out FinePower, a tool that checks power and IR drop for system-on-chip (SoC) designs. The company claims to have new technology that significantly speeds the analysis while maintaining accuracy. Mentor Graphics boosts India
  • Three-Dimensional Microfabrication by Two-Photon Polymerization
    above the intensity threshold at which. 2. polymerization will occur. Third, the optical penetration. the newly formed radicals has a tetrahedral structure with a. depth is greatly increased with the use of near-IR light. single electron at one corner, which allows it to attack. Fourth, movable
  • | Electronics Industry News for EEs & Engineering Managers
    . Analysis: IR hopes divestiture will spark growth With earnings a bit flat, International Rectifier Corp. is hoping that a plan to accelerate a transition to higher-margin products will bolster its bottom line. Tool claims first transistor-level closed loop PLL verification Claiming an industry first, EDA
  • Diode Arrays Tutorial
    Electrical Characteristics @ 25 Degrees Centigrade Vf (V) Ir (uA) Capacitance (pF)Junction Diode Trr (nS) @100mA @500mA @Vr = 40V Vr = 0V If = Ir = 10mARL = 100 Ohms 1.0 1.5 0.100 2 4 In addition, American Microsemiconductor Inc. supplies direct replacements for most popular discontinued diode
  • Designing with HV Microcontrollers
    is significantly. MT2. MT. MT2. lower than a BJT. Avoiding a continuous base bias. current further reduces the load current on the system,. ILOA. LO D. A. ILOAD. Gat. Ga e. Gate. and lowering the ON voltage of the drive means that. more of the energy is actually delivered to the output. ITR. T IGGE. I. R.
  • Modeling Phototransistor Optocouplers Using PSPICE Simulation Software
    Current. IR. VR = 5 V. 5. µA. Terminal Capacitance. Ct. V = 0 V, f = 1.0 MHz. 50. pF. TRANSISTOR. Collector to Emitter. ICEO. VCE = 80 V, IF = 0 mA. 100. nA. Dark Current. COUPLED. Current Transfer Ratio. CTR. IF = 5 mA, VCE = 5 V. 80. 300. 600. %. (IC/IF)Note 1. Collector Saturation. VCE(sat

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