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LDMOS Amplifier
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RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude.
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Supplier: Micronetics, Inc.Description: The SM1920-52LD is an 1930 - 1990 MHz LDMOS amplifier designed for various military and commercial applications. Features Mis-Match Protected with Built-In Isolator Single Power Supply Temperature Compensation Options Linear Forward/Reverse Power Detection (AD8362 Log amps
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Mobile / Wireless Systems, SATCOM Amplifier
- Package Type: Connectorized
- RF Connector: SMA
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Supplier: Micronetics, Inc.Description: The SM1920-52LD is an 1930 - 1990 MHz LDMOS amplifier designed for various military and commercial applications.
- Product Category: Power Amplifier / SSPA
- Mounting: Rack Mount, Stand Alone
- Connectors / Interfaces: SMA
- Features: Integrated Heatsink
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Supplier: Integra Technologies, Inc.Description: Part number MPAL2731M30 is a miniaturized power amplifier which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration
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Supplier: Micronetics, Inc.Description: The SM09296-45LD is a solid state LDMOS amplifier designed for the Cellular/GSM telephony market. It is one of the smallest amplifiers in the industry to deliver a P1dB of 50 watts. The operating frequency is 925-960 MHz, and the linear gain is 55 dB with a gain flatness of ± 0.5 dB across
- Product Category: Power Amplifier / SSPA
- Mounting: Rack Mount, Stand Alone
- Connectors / Interfaces: SMA
- Features: Integrated Heatsink
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Supplier: Micronetics, Inc.Description: The SM09195-45LD is a solid state LDMOS amplifier designed for the Cellular/GSM telephony market. It is one of the smallest amplifiers in the industry to deliver a P1dB of 30 watts. The operating frequency is 917-950 MHz, and the linear gain is 50 dB with a gain flatness of ± 0.5 dB across
- Product Category: Power Amplifier / SSPA
- Mounting: Rack Mount, Stand Alone
- Connectors / Interfaces: SMA
- Features: Integrated Heatsink
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Supplier: Avnet ExpressDescription: LDMOS RF PWR-AMP BIAS CNTRLR 16TSSOP
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Supplier: Integra Technologies, Inc.Description: Part number MPAL3035M30 is a miniaturized power amplifier which is internally matched to 50 ohms. It is designed for SBand radar systems and operates over the instantaneous bandwidth of 3.0-3.5 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration
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Supplier: Integra Technologies, Inc.Description: Part number ILP1214EL200 is a 50 Ù matched 2- stage high power pulsed radar pallet amplifier for L-Band radar systems operating over the instantaneous bandwidth of 1215-1400MHz. The pallet amplifier supplies a minimum of 200 watts of peak pulse power under the conditions of 16ms pulse
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Supplier: TriQuint Semiconductor, Inc.Description: The PD25025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor ( 2.3GHz - 2.5GHz Class AB wireless base station LDMOS) RF power transistor suitable for amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art
- Transistor Type / Technology: MOSFET, HEMT
- Polarity: N-Channel
- Package Type: Other
- Transistor Grade / Operating Range: Industrial
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Supplier: AR Modular RFDescription: The Model CMS2010 is a 2.5 –2.7 GHZ Solid-State latest generation LDMOS power amplifier module built for the wireless broadband network. This 47dBm linear power amplifier has a gain of 45dB minimum and is designed to meet the WiMAX (802.16) specifications. It can be modified to meet various
- Applications: Military / Defense, Mobile / Wireless Systems
- Form Factor / Package: Stand Alone
- Power Source: DC (Battery) Power
- RF Connector: SMA
Featured Products for LDMOS Amplifier Top
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Integra Technologies announces another S-band radar pallet that will significantly reduce cycle time in your next high powered design. Part number ILP2731M260 is a 50 W matched high power pulsed radar pallet amplifier for S-Band radar systems produced for drop-in manufacturability. The pallet amplifier supplies a minimum of 260 watts of peak pulse power under the conditions of 300us pulse width and 10% duty cycle operating over the instantaneous bandwidth of 2.70-3.10GHz. The unit operates... (read more)Browse RF Amplifiers Datasheets for Integra Technologies, Inc. -
Integra Technologies is proud to announce their highest power MPA, part number MPAL2731M130. It is a miniaturized power amplifier which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration. It may be operated in class B, AB and A mode. It is operable over nearly any pulse width and duty factor. Under 300us / 10% pulsed... (read more)Browse RF Amplifiers Datasheets for Integra Technologies, Inc.
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The MRFE6VP8600, designed for UHF broadcast & industrial designs, is the latest addition to Freescale's portfolio of rugged RF transistors. Operating from 470 - 860 MHz, this 50V LDMOS device is capable of 600W peak power while able to withstand greater than 65:1 VSWR. The MRFE6VP8600 is a breakthrough RF Power device that brings levels of power and ruggedness never before seen in the broadcast industry. Delivers 125W Avg. DVB-T (8k OFDM) output power at 50V. Capable of handling >65:1... (read more)Browse RF Transistors Datasheets for Avnet Express
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Integra Technologies announces another S-band radar pallet that will significantly reduce cycle time in your next high powered design. Part number ILP2731M260 is a 50 W matched high power pulsed radar pallet amplifier for S-Band radar systems produced for drop-in manufacturability. The pallet amplifier supplies a minimum of 260 watts of peak pulse power under the conditions of 300us pulse width and 10% duty cycle operating over the instantaneous bandwidth of 2.70-3.10GHz. The unit operates... (read more)Browse RF Amplifiers Datasheets for Integra Technologies, Inc.
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Integra Technologies is proud to announce their highest power MPA, part number MPAL2731M130. It is a miniaturized power amplifier which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration. It may be operated in class B, AB and A mode. It is operable over nearly any pulse width and duty factor. Under 300us / 10% pulsed... (read more)Browse RF Amplifiers Datasheets for Integra Technologies, Inc.
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Power Amplifiers For Legacy Communication designs as well as Virtually Every New & Emerging Communications System. AR Modular RF is recognized worldwide as a leading supplier of RF amplifier systems and RF amplifier modules. We're known for innovative technology, unsurpassed quality & dependability, and for an international support and service network that is second to none. With output powers from 5 - 5,000 watts and spanning frequencies from 0.01 - 6,000 MHz, the systems and modules... (read more)Browse RF Amplifiers Datasheets for AR Modular RF
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The BBA Series is a family of low-cost high-performance broadband RF amplifiers. The modules are ideally suited to a wide range of amplification and buffering applications, including extending the range of Linx RF modules (where legally appropriate). Housed in a compact SMD package, the hybrid amps are matched to 50-ohm source and load impedances. The modules utilize a GaHBT gain stage, which yields high gain and IP3, excellent flatness, and low noise. The BBA-322-A is the high gain model... (read more)Browse RF Amplifiers Datasheets for Linx Technologies
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MSK offers the highest performance operational amplifiers available: Output Voltage up to 180 Volts Output Current up to 15 Amps Slew Rate up to 6000 Volts per Microsecond Available in Industrial, Military, and Space quality levels in most cases Many available on Standard Microcircuit Drawings Radiation Hardened (RH Suffix) parts available (read more)Browse Power Amplifiers Datasheets for M.S. Kennedy Corp.
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AKON is a leading manufacturer of high quality, advanced Detector Log Video Amplifiers (DLVA's) and IF Log Amplifiers from 21.4 MHz through 20 GHz. Particular emphasis is placed by Akon on Total Quality Management throughout all phases of Engineering and Management. Akon is qualified to MIL-I-45208 Quality System Requirements by agencies of DOD and leading foreign and domestic military OEM's. Screening to requirements of MIL-STD-883, Method 5008 is available at additional cost and is performed... (read more)Browse RF Amplifiers Datasheets for Akon, Inc.
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The DCI 110 and DCI 120 are miniature, battery-powered bridge/ strain recorders designed to record measurements automatically at time intervals ranging from 20 Hz to 12 hours. These stand-alone devices feature real-time clock modules that allow for high-speed downloads. The devices can measure and record more than 32,000 measurements per channel. Data is stored in flash memory, providing maximum data protection even when the battery is fully discharged. Each device can be remotely started and... (read more)Browse Bridge Conditioners Datasheets for Cooper Instruments & Systems
Parts by Number for LDMOS Amplifier Top
| Partb # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| ATC100B5R1CP | ASAP Semiconductor | ATC | Not Provided | STOCK RF LDMOS Wideband Integrated Power Amplifiers |
| DS1870E-010+ | Avnet Express | Maxim Integrated Products | Amplifiers Misc | LDMOS RF PWR-AMP BIAS CNTRLR 16TSSOP |
Conduct Research Top
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
licensing objectives. Xemod is a privately held, fabless maker of RF power amplifier modules and components based on lateral double-diffused transistor (LDMOS) technology. The company is based in Tempe, Arizona. Nvidia's profits plunge on soaring sales SANTA CLARA, Calif. -- Profits at graphics chip
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Mixed Mode Silicon-on-Insulator MMIC Technology For Digitally Controlled RF/Microwave Systems (.pdf)
. LDMOS. NMOS. Support for high power RF. LPNP. Gated LPNP. Voltage references, beta > 15. Digital Library. 0.8 / 0.5 um N/P. Standard cells for digital structure synthesis and autorouting. Diodes. Schottky. High frequency mixers. Varactor. Tuneable structures / VCOs. PIN. 60 V breakdown , switches
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The Impact of Conductor Surface Profile (Rrms) on Total Circuit Attenuation in Microstrip and Stripline
, reliability, Young's modulus. Read Abstract Download PDF. Trends in RF/Microwave & High Speed Digital and their effect on PCB Technology Requirements. TSM-30, fastrise. Read Abstract Download PDF. A 45W amplifier for 23cm. RF-35, power amplifier, LDMOS technology. Read Abstract Download PDF
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The Anisotropy of Dielectric Constant in TLY-5A Material
Download PDF. Trends in RF/Microwave & High Speed Digital and their effect on PCB Technology Requirements. TSM-30, fastrise. Read Abstract Download PDF. A 45W amplifier for 23cm. RF-35, power amplifier, LDMOS technology. Read Abstract Download PDF. Measuring Dielectric Properties and Surface
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Multilayer Lamination Methods for PTFE-Based PCBs
and their effect on PCB Technology Requirements. TSM-30, fastrise. Read Abstract Download PDF. A 45W amplifier for 23cm. RF-35, power amplifier, LDMOS technology. Read Abstract Download PDF. Measuring Dielectric Properties and Surface Resistance of Microwave PCBs in the K-band. TLY-5A, TLC-32, DK
Engineering Web Search: LDMOS Amplifier Top
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RF Amplifier ICs
RF LDMOS Power Transistors Mobile -- To 520 MHz General Purpose LDMOS Drivers -- To 2100 MHz
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RF Power
Freescale Semiconductor serves numerous RF power amplifier markets including wireless infrastructure, broadcast, industrial, scientific and medical
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RF MMIC amplifiers and mixers :: NXP Semiconductors
Avionics LDMOS transistors ( 19 ) L-Band LDMOS transistors ( 10 ) S-Band LDMOS transistors ( 20 ) Avionics bipolar transistors ( 4 )
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General purpose wideband amplifiers (50?) :: NXP...
Avionics LDMOS transistors ( 19 ) L-Band LDMOS transistors ( 10 ) S-Band LDMOS transistors ( 20 ) Avionics bipolar transistors ( 4 )
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Infineon Announces Industry First Dual LDMOS Integrated Power...
Infineon Announces Industry First Dual LDMOS Integrated Power Amplifiers; Ideal for Doherty Architecture and Compact Cellular Amplifier Designs
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CMS2010: 50 Watts, 2.5 - 2.7 GHz LDMOS Power Amplifier Module
CMS2010: 50 Watts, 2.5 - 2.7 GHz LDMOS Power Amplifier Module
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IEEE PA Workshop for Wireless Communications, San Diego, 2004...
Communications, San Diego, 2004 A 60-W L-Band Class-E/Fodd,2 LDMOS Power Amplifier Using Compact Multilayered Baluns Feiyu Wang and David B. Rutledge
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AN LDMOS VHF CLASS E POWER AMPLIFIER USING A HIGH Q NOVEL...
AN LDMOS VHF CLASS E POWER AMPLIFIER USING A HIGH Q NOVEL VARIABLE INDUCTOR Herbert Zirath, David Rutledge+ Chalmers University of Technology,
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A study on efficiency improvement of Doherty amplifier using...
A study on efficiency improvement of Doherty amplifier using LDMOS FET for WiMax networks
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Design of a current mode class-D RF amplifier using load pull...
Because the CMCD amplifier is in fact a push-pull version of the inverted class-F amplifier the optimum load impedances for an inverted class-F
