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Parts by Number Top

Part # Distributor Manufacturer Product Category Description
Three Stage LPCVD-TEOS Traps   EBARA Technologies, Inc. Vacuum Flanges and Fittings Standard beadblast finish electropolished available on request
142A   MKS Instruments, Inc. Pressure Switches valveactuators, computers, process controllers, or other protection devices. The 142 Pressure/Vacuum Switch is a heated (100 °C) version ofthe type 141, and is designed to help minimize process effluent buildupthat can occur in LPCVD nitride, aluminum etch, and other types ofprocesses. Since...
HD1200   SynSysCo Mechanical Vacuum Pumps and Systems by-products. They are very compact, quiet and have state-of-the-art network, control and feedback capabilities. Recommended Applications: Diffusion Furnaces, PECVD, a-Si / u-Si deposition, Etch, LPCVD. Pumping Capacities: 120 m ³/hr to 1,000 m ³/hr (70-588 cfm)...
iH1800HTX   Edwards Vacuum Vacuum Pumps and Vacuum Generators is specifically designed for processes such as 300 mm LPCVD Nitride, where higher operating temperatures are required to prevent process gas condensation.
ER80   ULVAC Technologies, Inc. Vacuum Pumps and Vacuum Generators The ER Series is the latest addition to ULVAC's PDR-C Series, popular for SiN-LPCVD, metal etching and other harsh processes generating sublimated substances. The ER Series is for process applications such as sputter, ashing, and etching requiring corrosion resistance. The ER Series are the most...

Conduct Research Top

  • Technical Article: Silicon Nitride Film Stress (.pdf)
    LPCVD Silicon Nitride is a deposition that coats all of the exposed areas of the wafer. The difference difference in mechanical properties between nitride and the silicon wafer will introduce a "stress" in the wafer+nitride system...
  • MICRO: Technical Programs
    of Advanced Industrial Science and Technology Progress and Challenges in PFC Reductions at AMD PFC Emissions from a 200 mm Fab at the 90 nm Technology Node In situ Cleaning of LPCVD Furnaces Using a Thermal NF Control of PFC Emissions from Plasma Processes by Reactive Gas Addition Advances
  • Evaluating the use of hard-mask films during bulk silicon etching
    to be protected during the etching process to prevent metal interconnects and bond pads from being etched. Deposition of a hard-mask film is one method of shielding frontside metallization from the corrosive etchant. Because exposure to high temperatures must be limited following metallization, LPCVD silicon
  • MICRO: Breakout
    and capacitor group. The equipment manufacturer began a program at the beginning of 2000 during talks about RTP and LPCVD equipment, Kuppurao says. "Increasingly, we were getting into gate oxide discussions with customers, all mentioning cleans being a very big
  • MICRO: Transistorama
    poly layers and to next-generation devices is discussed briefly. Bit Line Coupling and Trench-Node Leakage During the development of doped polysilicon recipes using a vertical low-pressure chemical vapor deposition (LPCVD) furnace at Infineon Technologies ' 300-mm fab in Richmond, VA, it was observed
  • MICRO: Product Technology News (September 2000)
    comparable to that of pumps for 200-mm processes. They offer high pumping speeds, quiet operation, ease of control, and low cost of ownership for the difficult etch, PECVD, and LPCVD processes used in silicon wafer and flat-panel display manufacturing. Two systems added to the NSX series perform
  • Examining scale-up and computer simulation in tool design for 300-mm wafer processing
    numerical simulation is possible. One simple example relates to the multiple-wafer-in-tube low-pressure chemical vapor deposition (LPCVD) reactor. In this system, wafers are placed in a tube parallel to one another, with the wafer axis

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