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Supplier: Nor-Cal Products, Inc.
Description: The LPCVD-TEOS trap is designed specifically to meet the demanding requirements of this process. Our dual stage trap contains a stainless steel gauze filter and a 10 micron particulate filter allowing solids to form inside the trap and preventing the small particles from moving down line
Flow Meters - GF Series High Purity/Ultra-High Purity Digital Thermal Mass High Flow Device -- GF101Supplier: Brooks Instrument
Description: rates up to 300 slpm N2 equivalent. The high flow design utilizes the proven GF sensor design and electronics. This high flow product provides excellent flow stability to target high flow purge lines in CVD, LPCVD, Diffusion, Epi processes,semiconductor chamber clean processes and MOCVD purge flows
- Type: Thermal Meter
- Process Media Type: Gas
- Mass Flow Rate Range: 0.1404 to 0.8259 lbs/min
- Operating Temperature: 50 to 122 F
Supplier: EBARA Technologies, Inc.
Description: No Description Provided
- Configuration: All Ports Same Type
- Fitting Connection / Port Type(s): Flange
- ISO Nominal Size: NW 80, NW 100
- Flange Bore / ID: 3 to 4 inch
Supplier: Edwards Vacuum
Description: Edwards' Tempest offers exhaust management at minimal cost for preservation of assets and regulatory compliance. The Tempest is suitable for treatment of exhaust streams containing water-soluble and water-reactive gases. Tempest is suitable for many processes including Metal Etch, Poly Etch, LPCVD
- Scrubber Model: Skid / Base Plate Mounted
- Orientation: Vertical
- Applications: Other
- Separation / Filtration System: Wet Spray
Supplier: Edwards Vacuum
Description: offers high reliability for difficult processes, such as PECVD and LPCVD, where particulate, condensable and corrosive by-products are present.
- Ultimate Operating Vacuum: 0.0075 torr
- Pumping Speed: 97.02 CFM
- Configuration: Combination / Multi-Technology Pump
- Mechanical Pump Type: Claw
Supplier: ULVAC Technologies, Inc.
Description: The ER Series is the latest addition to ULVAC's PDR-C Series, popular for SiN-LPCVD, metal etching and other harsh processes generating sublimated substances. The ER Series is for process applications such as sputter, ashing, and etching requiring corrosion resistance. The ER Series are the most
- Ultimate Operating Vacuum: 0.0050 torr
- Pumping Speed: 229 CFM
- Configuration: Individual Vacuum Pump
- Applications: General Purpose / Industrial, Chemical / Corrosive Gas, Semiconductor Manufacturing
Supplier: MKS Instruments, Inc.
Description: , valveactuators, computers, process controllers, or other protection devices. The 142 Pressure/Vacuum Switch is a heated (100°C) version ofthe type 141, and is designed to help minimize process effluent buildupthat can occur in LPCVD nitride, aluminum etch, and other types ofprocesses. Since
- Working Pressure Range: 0.0193 to 19.34 psi
- Device Category: Sensor
- Pressure Reading: Absolute
- Sensor Technology: Variable Capacitance
Vacuum Pumps and Vacuum Generators - Harsh Duty Service, Low Power Consumption Vacuum Pump -- HD1200Supplier: LOT Vacuum America
Description: -of-the-art network, control and feedback capabilities. Recommended Applications: Diffusion Furnaces, PECVD a-Si / u-Si deposition, Etch LPCVD Pumping Capacities: 120 M3/hr to 1,000 M3/hr (70-588 cfm)
- Pumping Speed: 588 CFM
- Configuration: Individual Vacuum Pump
- Mechanical Pump Type: Rotary Screw
- Applications: General Purpose / Industrial, Analytical / Scientific, Semiconductor Manufacturing
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Nor-Cal Products, Inc.
Vacuum System Traps...Single & Multi-Stage
Nor-Cal Products, Inc. Increase your system's throughput and extend preventative maintenance intervals by 2X or more with LPCVD/TEOS multistage foreline traps. The first stage is a stainless steel gauze filter which collects crystalline TEOS before it reaches downstream piping and isolation valves. The second stage is a 10 micron fiberglass filter which removes silicon dioxide which causes frequent PMs in throttling butterfly valves. The third and final stage is a reservoir which collects... (read more)
Browse Vacuum Traps, Getters, and Filters Datasheets for Nor-Cal Products, Inc.
Nor-Cal Products, Inc.
Custom Heaters, Heater Jackets & components
particle generation and eliminates unscheduled maintenance downtime, improving the consistency of you process yields. Many processes can benefit from heated lines. Silicon nitride LPCVD and aluminum or tungsten metal etch are the most common processes requiring heated pump lines. (read more)
Browse Flexible Heaters Datasheets for Nor-Cal Products, Inc.
Technical Glass Products, Inc. - OH
Avoiding Semiconductor Failures
lines and inclusions, and are often chosen for wafer production due to excellent dimensional stability. Type 214 LD [large diameter] clear fused quartz tubing offers the same excellent properties as Type 214, but is used for diffusion, oxidation and LPCVD (low-pressure chemical vapor deposition) processing. Type 124 fused quartz offers high purity but contains some fine bubbles. Available in a variety of shapes and sizes, it is an economical product used to fabricate wafer carriers. Type 012 Ingots... (read more)
Browse Silica, Quartz, and Silicate Materials Datasheets for Technical Glass Products, Inc. - OH
Conduct Research Top
Technical Article: Silicon Nitride Film Stress (.pdf)
LPCVD Silicon Nitride is a deposition that coats all of the exposed areas of the wafer. The difference difference in mechanical properties between nitride and the silicon wafer will introduce a "stress" in the wafer+nitride system...
MICRO: Technical Programs
of Advanced Industrial Science and Technology Progress and Challenges in PFC Reductions at AMD PFC Emissions from a 200 mm Fab at the 90 nm Technology Node In situ Cleaning of LPCVD Furnaces Using a Thermal NF Control of PFC Emissions from Plasma Processes by Reactive Gas Addition Advances
Evaluating the use of hard-mask films during bulk silicon etching
to be protected during the etching process to prevent metal interconnects and bond pads from being etched. Deposition of a hard-mask film is one method of shielding frontside metallization from the corrosive etchant. Because exposure to high temperatures must be limited following metallization, LPCVD silicon
Examining scale-up and computer simulation in tool design for 300-mm wafer processing
numerical simulation is possible. One simple example relates to the multiple-wafer-in-tube low-pressure chemical vapor deposition (LPCVD) reactor. In this system, wafers are placed in a tube parallel to one another, with the wafer axis
MICRO: Product Technology News (September 2000)
comparable to that of pumps for 200-mm processes. They offer high pumping speeds, quiet operation, ease of control, and low cost of ownership for the difficult etch, PECVD, and LPCVD processes used in silicon wafer and flat-panel display manufacturing. Two systems added to the NSX series perform
poly layers and to next-generation devices is discussed briefly. Bit Line Coupling and Trench-Node Leakage During the development of doped polysilicon recipes using a vertical low-pressure chemical vapor deposition (LPCVD) furnace at Infineon Technologies ' 300-mm fab in Richmond, VA, it was observed
and capacitor group. The equipment manufacturer began a program at the beginning of 2000 during talks about RTP and LPCVD equipment, Kuppurao says. "Increasingly, we were getting into gate oxide discussions with customers, all mentioning cleans being a very big
More Information Top
MEMS Materials and Processes Handbook
LPCVD Polycrystalline Silicon . . . . . . . . . . . .
Manufacture Of Optical Interference Coatings By Low Pressure Chemical Vapor Deposition
Low Pressure Chemical Vapor Deposition ( LPCVD ) has found wide use as a manufacturing process in semiconductor fabrication...
Silicon Carbide Microsystems for Harsh Environments
2.4.2 LPCVD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
...deposition in CMUT membranes, 2 31 lower critical solution temperature (LCST) behavior in hydrogels, 2 149 LPCVD .
Springer Handbook of Nanotechnology
liquid nitrogen LPCVD .
Applicability of RTCVD and LPCVD nitride spacers for sub-0.18-&mgr;m CMOS technologies
Applicability of RTCVD and LPCVD nitride spacers for sub-0.18-&mgr;m CMOS technologies .
Electrical properties of silicon dioxide films fabricated at 700°C. II: Low pressure hydride deposition
...reaction of dichlorosilane and nitrous oxide at 700~ The electrical quality of these LPCVD films was evaluated...
Mathematical Processing for Simulation and Control of Semiconductor Processing.
...significant portion of our efforts was devoted to the outer-loop control of LPCVD processes using opti...
Microsystems and Nanotechnology
and low pressure chemical deposition( LPCVD ) silicon nitride were measured .