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  • MICRO: Using a transducer and a flowmeter to determine slurry flow rate and POU filter life
    can occur at any time during the process if particulates accumulate and clog up the filter element. When POU filters are used in chemically dominant processes such as shallow trench isolation and metal polishing involving tungsten and copper, an unanticipated reduction of slurry flow can be highly
  • MICRO: green mfg
    Ara Philipossian and Farhang Shadman, Patrick Levy, Saied Tousi, and Barry Gotlinsky, W. Scott Rader, Paul Lefevre, and Isamu Koshiyama, Chemical-mechanical polishing (CMP) technology has played an enabling role in attaining near-perfect planarity of interconnection and metal layers, an essential
  • MICRO:Product Technology News (April '2000)
    slurries at the point of dispense for CMP tools. It features a gradient-density polypropylene media that removes wafer-damaging agglomerations and particles without adversely affecting the distribution of the polishing slurry. Capsules with absolute retention ratings of 0.45 70 um are available
  • MICRO:Process Equipment-CMP Consumables, by Douglas W. Cooper, p.53 (July '99)
    Douglas W. Cooper and Rob C. Linke, Whether used to remove excess metal or oxide from IC chips or thin-film data-storage disks, chemical-mechanical polishing or planarization (CMP) has become an increasingly important and rapidly growing technology. Most CMP combines chemical activity with abrasion
  • MICRO: Defect/Yield Analysis
    Kerstin Kaemmer and Grit Bonsdorf, Martin Tuckermann and Jim Kavanagh, By decreasing the number of defects of interest, in-line RTC can facilitate cleaning-process optimization and increase device yields. hemical-mechanical polishing is now widely used for the planarization of oxide and metal
  • MICRO:February 1998:Anaysis & Metrology Post-CMP; by Cheri Dennison, (p 31)
    (BPSG), and IMD oxide just after metal 1 (bottom). The differences in the underlying structures seen here can lead to unique defect inspection challenges. When CMP is used for oxide polishing, a distinction is often made between premetal oxides and the IMD oxides used at the back end of the line
  • MICRO:Building Copperopolis, by Hugh Li, p.35 (March '99)
    may come from the slurry abrasives, polishing pads, pad conditioners, and the polished material itself, while metallic and organic contaminants may come from the same sources. In the case of a copper interconnect structure, copper residue in the dielectric regions or on the silicon substrate backside
  • Liquid Analysis in Mineral Processing
    addition. T. C. Cle. Tails. he difficulties of this. ation. measurement have since been. overcome through joint effort econ. s wi cav. ima. th AST. c. av. I to develop calibration procedures using flat ORP and. S. S. Pr. S. (To Cl #1). polishing ORP sensors. Zn Clean. Flot. (. 1. st st. r. y. onc. Other

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