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TA028: GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost
expectations. The MSAG(R) is based upon Metal Semiconductor Field Effect Transistor (MESFET) technology. The MESFET active area is formed using selective ion implantation. Both microwave and digital FETS can be fabricated on a single MMIC, with each microwave device independently optimized for power
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Mixed Mode Silicon-on-Insulator MMIC Technology For Digitally Controlled RF/Microwave Systems (.pdf)
for 2.4/5.8GHz are described along with related system-on-a-chip implementations. Plymouth, MN 55441, USA Mixed Mode Silicon-on-Insulator MMIC Technology For. Digitally Controlled RF/Microwave Systems. Jeff Kriz. Honeywell, Solid State Electronic Center, 2C22. 12001 Hwy 55. Plymouth, MN 55441, USA
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M542: Electrical Characterizations of Packages for use with GaAs MMIC Amplifiers
of the currently available microwave packages in order to identify appropriate packages for our MMIC amplifier products which cover frequencies up to 12 GHz. In addition, the technique has been employed to characterize injection- molded plastic packages and to evaluate nonprobeable MMIC's. Most package
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TA031: GaAs X-Band Multifunction Control MMIC Using the MSAG(R) Process
This paper describes efforts to achieve first pass design success for an X-band control MMIC consisting of multi-bit phase shifter, multi-bit attenuator, amplifier and serial-to-parallel converter functions using MSAG(R) Process 5. A discussion of the merits of multifunction MMIC integration using
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TA029: Generic 2.5-W 60% Bandwidth C-Band MMIC Amplifier
This paper reports the design and test data of a generic 2.5-W two-stage C-band MMIC power amplifier developed using the MSAG(R) MESFET process. We measured typically a minimum PAE of 45% and 2.5W CW output power over the 4.5 to 7.4 GHz for the MMIC chip packaged on CuW carrier. The output power
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Managing Spurious Noise in Complex Microwave Assemblies
. allowed engineers to produce high yielding complex RF systems and MMIC circuits through. 20 GHz and moderate yields through the mmWave bands. However, virtually all complex. RF systems with critical carrier noise requirements fail to meet their detailed requirements. on the first pass design. Often
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Trends in Microwave/Millimeter-Wave Front-End Technology
, have. ICROWAVE TECHNOLOGIES. become available. GaAs PHEMT MMIC power amplifiers. Cellular telephone handsets, operating in bands near 1 and typify the technology used at these frequencies. Figure 2. 2 GHz, now include multi-band, multi-mode radio front ends shows a TriQuint 18 - 26 GHz 1W PHEMT
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TA038: High Performance Wideband Amplifiers For Radar And Satcomm Applications
A series of high performance wideband MMIC low noise, gain block and driver amplifiers has been developed for applications in next-generation radar and satcom equipment. These new amplifiers operate in the 2 to 20 GHz frequency range and feature a single-supply, low noise and distributed gain