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Mitsubishi MESFET LNA
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Product Announcements
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TriQuint Semiconductor, Inc. 
TriQuint Semiconductor, Inc. 
TriQuint Semiconductor, Inc. 
TriQuint Semiconductor, Inc.
TriQuint Semiconductor, Inc.
TriQuint Semiconductor, Inc. |
Products/Services for Mitsubishi MESFET LNA
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RF Amplifiers - (518 companies)RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude. Search by Specification | Learn More -
Power Amplifiers - (119 companies)Power amplifiers deliver a specific amount of AC power to a load. They are used in audio frequency and radio frequency applications. Learn More -
Semiconductor Foundry Services - (177 companies)Semiconductor foundry services suppliers design and manufacture semiconductor chips on a contract basis, in prototype to production quantities. Search by Specification | Learn More -
Cryogenic Equipment - (127 companies)Cryogenic equipment produces or is used in the production of very low temperature materials or processes. Learn More -
Signal Amplifiers - (276 companies)Signal amplifiers accept signals from sensors and other devices and amplify them to levels suitable for further processing or digitization by computer elements. Search by Specification | Learn More -
Instrumentation Amplifiers - (160 companies)Instrumentation amplifiers are differential amplifiers that have been optimized for use with DC signals. They are characterized by high gain, high common mode rejection ratio (CMRR), and high input impedance. Search by Specification | Learn More
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Fiber Optic Amplifiers - (120 companies)Fiber optic amplifiers re-amplify an attenuated signal without converting the signal into electrical form. Search by Specification | Learn More
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Audio Amplifiers and Preamplifiers - (334 companies)Audio amplifiers and audio preamplifiers are used to increase the amplitude of sound signals. Preamplifiers or preamps are designed to amplify low-level signal from a high-impedance device such as a microphone or instrument pick-up. After pre-amplification, the signal is sent to a power amplifier or amp, which provides the higher current necessary to drive the speakers. Search by Specification | Learn More
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Amplifier and Comparator Chips - (266 companies)Amplifier and comparator chips are board-level components for amplifying voltage, current, or power. Search by Specification | Learn More
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RF and Microwave Laminates - (31 companies)RF and microwave laminates are used as substrates for radio frequency (RF) and microwave communication systems and electronics. They are designed to meet the demanding performance standards for higher-frequency applications. Search by Specification | Learn More
Product News for Mitsubishi MESFET LNA
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Networks International Corporation
C-band Integrated Filter / LNANIC introduces a ruggedized C-band Filter / LNA for use in eliminating interference caused by navigational communications (radar) of commercial and military aircraft, as well as coastal and marine vessels operating above and below the C-band. This Filter / LNA offers 23dB gain and a low noise figure of 1.1dB in a hermetically sealed package. Click Here to See Product information. Click Here to See Specs (read more)Browse RF Amplifiers Datasheets for Networks International Corporation -
MITEQ, Inc.
High Dynamic Range, Wideband LNAMITEQ Model AMF-2F-00020050-20-28P is a new addition to its family of low noise, wideband, and ultra-small coaxial LNAs in the 20 to 500 MHz band. This LNA has over 35 dB of gain in a housing that is only 1.22" long and 0.88" wide without the field-replaceable SMA connectors that are mounted on a removable heatsink. Quick Links: Full data and additional information for Miteq's High Dynamic Range, Wideband LNA (Model AMF-2F-00020050-20-28P). Email our sales engineers your specific application... (read more)Browse RF Amplifiers Datasheets for MITEQ, Inc. -
World StarTechnologies
260 mW, 825 nm Mitsubishi IR Laser DiodeFeatures. • High Output Power: 260mW (CW). • High Efficiency: 1.0mW/mA (typ.). • Peak Wavelength: 825nm (typ.). • Lateral single-mode lasing. • φ5.6mm TO-CAN PKG (with monitor PD). Applications. • Motion sensor. • Printing (read more)Browse Diode Lasers Datasheets for World StarTechnologies -
Avago Technologies
GaAs MMIC Low Noise Amplifier (LNA)Avago Technologies' MGA-13316 is a two stage, easy-to-use GaAs MMIC Low Noise Amplifier (LNA). The MGA-13316 LNA has low noise with good input return loss and high linearity achieved through the use of Avago Technologies' proprietary 0.25um GaAs Enhancement-mode pHEMT process. View Data Sheet (PDF). CLICK HERE TO REQUEST A FREE SAMPLE. CLICK HERE FOR QUOTATION (read more)Browse RF Amplifiers Datasheets for Avago Technologies -
Avago Technologies
ALM-11036 Tower Mount LNA ModuleAvago Technologies' ALM-11036 is an easy-to-use GaAs MMIC Tower Mount Amplifier (TMA) LNA Module with low insertion loss bypass path. ALM-11036 has low noise and high linearity achieved through the use of Avago Technologies' proprietary 0.25um GaAs Enhancement-mode pHEMT process. CLICK HERE TO REQUEST A FREE SAMPLE. CLICK HERE FOR QUOTATION. CLICK HERE FOR DATASHEET. CLICK HERE FOR PRODUCT ON AVAGO.COM (read more)Browse RF Amplifiers Datasheets for Avago Technologies -
Teledyne Cougar, Inc.
RF Amplifier, LNA, Low Noise (AC1286)Model AC1286 is a cascadable low noise amplifier (LNA), 650-1200 MHz, that offers low noise figure, 1.0 dB; high gain, 31 dB; 12.5 dBm output power, high reverse isolation, 42 dB; all typical. Typical intermodulation performance: 23 dBm IP3 and 35 dBm IP2. Operating at 15 volts nominal, the amp yields only 62 mA DC Current. Comes standard in a TO-8 package; also available in surface mount, SMTO-8, and SMA connectorized packages. The AC1286 is one of many cascadable RF amplifiers and microwave... (read more)Browse RF Amplifiers Datasheets for Teledyne Cougar, Inc. -
TriQuint Semiconductor, Inc.
High-Performance, High-Linearity LNA Gain BlocksThe TQP3M9007 is a 0.25 W high linearity low noise gain block amplifier in a low-cost surface-mount package. The TQP3M9007 has the benefit of having high linearity while also providing very low noise across a broad range of frequencies. This allows the device to be used in both receive and transmit chains for high performance systems. Features. 50 Ohm Cascadable Gain Block. 500-4000 MHz. Broadband, internally matched. 1.3 dB Noise Figure. 41 dBm OIP3. 23.6 dBm P1dB. Unconditionally stable. High... (read more)Browse RF Amplifiers Datasheets for TriQuint Semiconductor, Inc. -
Avago Technologies
MGA-638P8 Ultra Low Noise, High Linearity LNAAvago Technologies' MGA-638P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has Low Noise and High Linearity achieved through the use of Avago Technologies' proprietary 0.25um GaAs Enhancement-mode pHEMT process. CLICK HERE TO REQUEST A FREE SAMPLE. CLICK HERE FOR QUOTATION. CLICK HERE FOR DATASHEET. CLICK HERE FOR PRODUCT ON AVAGO.COM (read more)Browse RF Amplifiers Datasheets for Avago Technologies -
Avago Technologies
ALM-2712: GPS Filter-LNA-Filter Front-End ModuleThe Avago ALM-2712 is an ultra low noise GPS front-end module that combines a low noise amplifier (LNA) with GPS FBAR filters. The LNA uses Avago Technologies' proprietary GaAs enhancement-mode pHEMT process to achieve high gain with very low noise figure and high linearity. CLICK HERE TO REQUEST A FREE SAMPLE. Very Low Noise Figure. Low external component count. Exceptional Cell/DCS/PCS/WLAN-Band rejection. Advanced GaAs E-pHEMT & FBAR Technology. Adjustable current via single external... (read more)Browse RF Modules Datasheets for Avago Technologies -
MITEQ, Inc.
Ultra Small & Low Noise Coaxial LNA: HF - RFMITEQ's HF through RF Ultra Small & Low Noise Coaxial LNA (Model AMF-2F-00100200-16-15P). This LNA has over 30 dB of gain in a housing that is only 1.22" long and 0.88" wide without the field-replaceable SMA connectors. Gain flatness is a maximum of ±1 dB, though typical is ±0.75 dB. The AMF-2F-00100200-16-15P has a maximum noise figure of 1.6 dB in the full band, though the typical value is 1 dB. MITEQ Inc. is proud to introduce a new addition, Model AMF-2F-00100200-16-15P, to its family... (read more)Browse RF Amplifiers Datasheets for MITEQ, Inc.
Engineering Web Search: Mitsubishi MESFET LNA
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Cryogenic wide-band ultra-low-noise if amplifiers operating at... A small-signal model was extracted from this inally designed for the Mitsubishi MGFC4419G GaAs HEMT WADEFALK et al.: CRYOGENIC WIDE-BAND |
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EDN Access--11.21.96  PCS RF-stage design: tackling the... In contrast, the LNA must capture a relatively weak RF signal corrupted by noise, fading, interference, distortion, and other poorly known See EDN Information |
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Richardson - Advance Search |
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Implanted MESFETs - Still Going Strong Martin J. Brophy,... Overall, data from Mitsubishi Electric [7 to which we have added year demand for IC's based on the once ubiquitous implanted dates for the various |
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Appendix F: Glossary Mitsubishi Electric Corporation MESFET HEMT-LNA high electron mobility transistor low noise amplifier |
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DEVICE MODELLING AT CRYOGENIC TEMPERATURES USING PULSED... transistors ATF55143 (GaAs E-pHEMT, Agilent) MGF1923 (GaAs MESFET, Mitsubishi) ? LNA design with ATF55143 From manufacturer manufacturer S-parameters |
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A 2.4-GHz-band 1.8-V operation single-chip Si-CMOS T/R MMIC... Si-RF ICs reported cuits--a power amplifier (PA), a low-noise amplifier (LNA), and a transmit/receive-antenna switch (SW), including almost all |
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PubTeX output 1999.03.15:1254 PA, an SW, and an LNA--a newly designed negative-voltage This transceiver enables significant size and weight reductions in generator combined with a |
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Untitled Capacitor, LDMOS,DohertyAmp.SiC,GaN MESFET,Isolator&Circulator,Filter,Attenuator,Termination,Fuse,Delay Line.LNA,TVA |
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Electronic Hardware: Companies and Devices Mitsubishi GaAs FETs, analog & mixed signal ASSP |
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