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Supplier: Avago Technologies
Description: The AMMC-6431 is an MMIC power amplifier designed for use in wireless transmitters that operate within a 25GHz and 33GHz range. This MMIC is optimized for linear operation with an output third order intercept point (OIP3) of 37dBm.
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- RoHS Compliant: Yes
- MMIC Technology Required: Yes
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Supplier: TriQuint Semiconductor, Inc.
Description: The TriQuint TGA4532-SM is a K-Band Power Amplifier. The TGA4532-SM operates from 17.7 - 19.7 GHz and is designed using TriQuint’s power pHEMT production process. The TGA4532-SM typically provides 32.5 dBm of saturated output power with small signal gain of 23 dB. The TGA4532-SM is available
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- RoHS Compliant: Yes
- Package Type: Surface Mount Technology (SMT)
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Supplier: TriQuint Semiconductor, Inc.
Description: The TQP787011 is a fully integrated power amplifier in an ultra-small 3mm x 3mm footprint package for 802.11a applications. The TQP787011 contains 5GHz PA + power detector, and on-chip input and output matching. The architecture and interface are optimized for next generation WLAN devices. The PA
- Device Type: Power Operational Amplifiers
- Package Type: Other
- Life Cycle Stage: Maturity
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Supplier: TriQuint Semiconductor, Inc.
Description: The TriQuint TGA4517 is a compact high power amplifier MMIC for Ka band applications. The part is designed using TriQuint's 0.15um gate power pHEMT process. The TGA4517 nominally provides 35 dBm of saturated output power and 20dB small signal gain at a mid-band of 31 to 37 GHz. The MMIC also
- Device Type: Other
- Life Cycle Stage: Maturity
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Supplier: TriQuint Semiconductor, Inc.
Description: 2.4GHz WLAN Power Amplifier + Switch MMIC with WLAN Rx Balun and Bluetooth Path
- Package Type: Other
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Supplier: TriQuint Semiconductor, Inc.
Description: TQP6M9002 2.4 GHz and 5 GHz WLAN Power Amplifier + Switch MMIC with WLAN Rx Baluns and Bluetooth® Path The TriQuint TQP6M9002 is a full WLAN / Bluetooth front-end module in an ultra small 4 x 4 mm footprint package for 802.11 a / b / g / n and Bluetooth applications. The TQP6M9002 contains
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Supplier: Skyworks Solutions, Inc.
Description: The Skyworks SKY65131 is a Microwave Monolithic Integrated Circuit (MMIC) Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SKY65131 ideal for Wireless Local Area Network (WLAN) applications. The device is fabricated using Skyworks high reliability
- Amplifier Type: Power Amplifier
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Supplier: Aeroflex / Metelics
Description: The Aeroflex / Metelics InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifiers are specially designed as broadband Darlington gain blocks for instruments, CATV, and wireless infrastructure applications. These gain blocks combines different levels of small signal gain, noise and bandwidth
- Amplifier Type: Other
- Applications: Mobile / Wireless Systems, Other
- RoHS Compliant: Yes
- MMIC Technology Required: Yes
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Supplier: Digi-Key Corporation
Description: IC AMP MMIC RF QUAD UMTS
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- RoHS Compliant: Yes
- MMIC Technology Required: Yes
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Featured Products for MMIC Power Amplifier Top
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TriQuint Semiconductor, Inc.
NEW AMPLIFIERS - Innovative Packaging
also for microwave radio and radar). The TGA2575-TS is the latest addition to TriQuint ’s Die-on-Tab product family, which makes it easier for manufacturers to handle die-level devices and assemble components by placing semiconductor FETs or MMIC amplifiers on thermal spreaders. A vacuum reflow process creates bonds between dies and bases. These bonds are virtually void-free and have high thermal stability. The TGA2575-TS and all die-on-tab products are inspected in the factory for thorough... (read more)
Browse RF Amplifiers Datasheets for TriQuint Semiconductor, Inc.
Parts by Number for MMIC Power Amplifier Top
| Part # | Distributor | Manufacturer | Product Category | Description |
|---|---|---|---|---|
| FMM5822VUT | ASAP Semiconductor | SUMITOMO ELECTRIC EUDYN | Not Provided | IC 17.7-18.7GHz POWER AMPLIFIER MMIC, 50 Ohm, Small Hermetic Met |
| FMM5057VF | ASAP Semiconductor | FUJITSU | Not Provided | IC FMM5057VF, 7.1-8.5GHz Power Amplifier MMIC, 50 Ohm, Small Her |
| EMM5068VUT | ASAP Semiconductor | SUMITOMO ELECTRIC EUDYN | Not Provided | IC. EMM5068VU, X/Ku-Band Power Amplifier MMIC, Broad Band: 9.5-1 |
| EMM5074VU | ASAP Semiconductor | SUMITOMO ELECTRIC EUDYN | Not Provided | IC. EMM5074VU, C-Band Power Amplifier MMIC, Broad Band: 5.8 - 8. |
| 6263364 | RS Components, Ltd. | NXP | RF Amplifier Chip | Manufacturer Type:MMIC Amplifier; Power Supply Type:Single; Typical Power Gain:14dB; Typical Output Power:2dBm; Typical Noise Figure:1.3dB; Supplier Package:CMPAK; Pin Count:4; Maximum Supply Current:11mA; Number of Channels per Chip:1; Mounting:Surface Mount |
| 7165167 | RS Components, Ltd. | Avago Technologies | RF Amplifier Module | Manufacturer Type:MMIC Amplifier; Power Supply Type:Single; Typical Single Supply Voltage:5V; Typical Output Power:19.5dBm; Typical Power Gain:14.5dB; Typical Output Intercept Point:26dBm; Number of Channels per Chip:1; Product Length:0.92mm; Product Height:0.1mm; Product Width:0.92mm |
Conduct Research Top
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TA029: Generic 2.5-W 60% Bandwidth C-Band MMIC Amplifier
effective power amplifier products. MMIC power amplifiers have the following potential advantages as compared to internally matched power amplifiers.
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M540: GaAs MMIC Low Noise Amplifiers (SOIC-8 Platform)
Early in 1994, M/A-COM began offering a family of plastic packaged GaAs MMIC low noise amplifiers (LNAs) featuring single positive supply voltage, low noise figure, high dynamic range, and low power consumption for the high volume commercial wireless communications market. These MMIC LNAs use M
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TA028: GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost
today is. competitive with power pHEMT (Pseudomorphic High Electron Mobility Transistor). processes for demanding phased-array applications through X-Band, achieving >10-watts and. 40% power-added efficiency. A typical 3-stage HPA (High Power Amplifier) MMIC designed with the MSAG process
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Mixed Mode Silicon-on-Insulator MMIC Technology For Digitally Controlled RF/Microwave Systems (.pdf)
for 2.4/5.8GHz are described along with related system-on-a-chip implementations. Plymouth, MN 55441, USA Mixed Mode Silicon-on-Insulator MMIC Technology For. Digitally Controlled RF/Microwave Systems. Jeff Kriz. Honeywell, Solid State Electronic Center, 2C22. 12001 Hwy 55. Plymouth, MN 55441, USA
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TA038: High Performance Wideband Amplifiers For Radar And Satcomm Applications
A series of high performance wideband MMIC low noise, gain block and driver amplifiers has been developed for applications in next-generation radar and satcom equipment. These new amplifiers operate in the 2 to 20 GHz frequency range and feature a single-supply, low noise and distributed gain
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DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process (.pdf)
gain compression condition in between 29 and 30.5GHz frequencies. These results verify the process capability to manufacture MMIC devices for applications up to 90GHz. White Paper - DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process (890 KB)
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TA047: High Voltage, Low Cost FETs for HPA MMIC Applications
power density at 65 percent poweradded efficiency (PAE) while operating at 14 GHz and 10 V drain voltage. Using this process, the company supplies some of the highest power GaAs MMICs available. The practical power limit for a MSAG high power amplifier (HPA) is set by the ability to implement
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TA041: A Surface Mount Plastic Packaged 1 to 18 GHz Low Noise Driver Amplifier
dBm output power (P1dB). Applications include use as a low noise gain block or driver amplifier in test equipment or electronic warfare and radar systems. The MAAMGM- 0002 amplifier is housed in a standard 5 mm FQFP-N 20 lead surface-mount plastic package. Inside is a single GaAs MMIC
Engineering Web Search: MMIC Power Amplifier Top
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Power Amplifier Mmic
Power Amplifier Mmic Tilaa Power Amplifier Mmic verkossa Digi-Keyltä.
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RF Micro Devices :: RF Solutions & Wireless...
power High power RF, high-frequency point-to-point RF chipsets, high-reliability signal sources, and modules.
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GaAs HEMT MMIC MEDIUM POWER datasheets and application notes,...
First line: GaAs HEMT MMIC MEDIUM POWER HEMT MMIC POWER AMPLIFIER HMC-APH510 v03.0709 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, Abstract: .. GaAs HEMT
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Quasi-optical and spatial power combining - Microwave Theory...
In power amplifiers. order to realize solid-state components with higher power and Index Terms--Active arrays, amplifiers, power
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BAI Course 228: GaN Power Amplifier Design
? semiconductor processes ? breakdown voltages ? thermal resistance ? power capability ? reliability ? thermal management techniques ? gain ?
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AMMC-6431: 25-33GHz 0.7W Power Amplifier from Avago...
Home > Company Directory > Avago Technologies > AMMC-6431: 25-33GHz 0.7W Power Amplifier
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PRODUCT SUMMARY SKY77181 Power Amplifier Module for WCDMA /...
SKY77181 Power Amplifier Module for WCDMA / HSDPA (880?915 MHz) Applications Description ? WCDMA Handsets The SKY77181 Power Amplifier module is a
