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MMIC RF
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RF amplifiers are devices that accept a varying input signal and produce an output signal that varies in the same way, but with larger amplitude.
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Supplier: Newark / element14Description: RF Amplifiers/MMIC Amplifier; Filter Terminals:SMD; Frequency Max:2GHz; Gain Bandwidth:2GHz; Leaded Process Compatible:No; No. of Amplifiers:1; Package / Case:4-86 Plastic Package; Peak Reflow Compatible (260 C):No
- MMIC Technology Required: Yes
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Supplier: Newark / element14Description: RF Amplifiers/MMIC Amplifier; No. of Amplifiers:1; Amplifier Output:Single Ended; Operating Temperature Range:-45°C to +85°C; No. of Pins:8; Filter Terminals:SMD; Frequency Max:3.5GHz; Gain:21.8dB; Leaded Process Compatible:Yes
- RoHS Compliant: Yes
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Supplier: Newark / element14Description: RF Amplifiers/MMIC Amplifier; No. of Amplifiers:1; No. of Pins:6; Frequency Max:6GHz; Gain:13.2dB; Leaded Process Compatible:No; Noise Figure Typ:2.2dB; Package / Case:6-SOT-363; Peak Reflow Compatible (260 C):No; Reel Quantity:3000
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Supplier: TriQuint Semiconductor, Inc.Description: The TriQuint TGA4532-SM is a K-Band Power Amplifier. The TGA4532-SM operates from 17.7 - 19.7 GHz and is designed using TriQuint’s power pHEMT production process. The TGA4532-SM typically provides 32.5 dBm of saturated output power with small signal gain of 23 dB. The TGA4532-SM is available
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- RoHS Compliant: Yes
- Package Type: Surface Mount Technology (SMT)
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Supplier: Avago TechnologiesDescription: The MSA-0600 is a high performance silicon bipolar MMIC chip, designed for use as a general purpose 50ohm gain block. Typical applications include narrow and broadband IF and RF amplifiers in commercial, industrial and military applications
- Amplifier Type: Low Noise Amplifier, Other
- Applications: Mobile / Wireless Systems
- RoHS Compliant: Yes
- MMIC Technology Required: Yes
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Supplier: TriQuint Semiconductor, Inc.Description: TriQuint-WJ offers an excellent portfolio for mixers, from a variety of different technologies, suitable for various applications. These technologies range from FETs to MMICs to diode mixers, thereby offering broadband, high IP3, and superior isolation performance.
- Package Type: Surface Mount Technology (SMT)
- LO Power: Other
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Supplier: Narda Microwave-EastDescription: Key features/applications • Superior performance as modulator driver in 40 and 100 Gb/s lightwave systems • Bandwidth of DC to 60 GHz • DC coupled input and output ports for low-frequency system optimization • RMS jitter of less than 450 fs • Small-signal gain of 23
- Applications: Other
- Form Factor / Package: Other
- Features: Connectorized
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Supplier: Teledyne Cougar, Inc.Description: The AGC-553 combines three MMIC RF amplifiers with 44 dB (typ) gain, and PIN diodes with 0 to +5 VDC control voltage for gain control. This amplifier has blocking capacitors which couple the RF signal through the amplifier, and bypass capacitors to filter the bias voltage line.
- Amplifier Type: Power Amplifier
- Applications: Military / Defense
- Package Type: Surface Mount Technology (SMT), Through Hole Technology (THT)
- Nominal Impedance: 50 Ohms
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Supplier: Avago TechnologiesDescription: The AMMC-5026 is a broadband PHEMT GaAs MMIC Traveling Wave Amplifier designed for medium output power and high gain over the full 2GHz to 35 GHz frequency range.
- Amplifier Type: Other
- Applications: Mobile / Wireless Systems
- MMIC Technology Required: Yes
- Package Type: Other
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Supplier: Avago TechnologiesDescription: to 20 GHz RF signal range. The LO and RF are matched to 50 Ω. The IF output is provided in 2-port format where an external 90-degree hybrid can be utilized for full image rejection. This MMIC is a cost effective alternative to multi-chip solution that have higher loss and complex assembly.
- Package Type: Surface Mount Technology (SMT)
- LO Power: Other
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Supplier: Avago TechnologiesDescription: to 20 GHz RF signal range. The LO and RF are matched to 50 Ω. The IF output is provided in 2-port format where an external 90-degree hybrid can be utilized for full image rejection. This MMIC is a cost effective alternative to multi-chip solution that have higher loss and complex assembly.
- Applications: Mobile / Wireless Systems, Satellite Communications (SATCOM), Terrestrial RF/Microwave Systems
- Form Factor / Package: Surface Mount Technology (SMT)
- Source Type: DC (Battery) Power
- Features: RoHS, Frequency Range Switch
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Supplier: Avago TechnologiesDescription: The MSA-9970 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic high reliability package. This MMIC is designed with high open loop gain and is intended to be used with external resistive and reactive feedback elements to create a variety
- Amplifier Type: Bi-directional Amplifier, Other
- MMIC Technology Required: Yes
- Package Type: Other
- Nominal Impedance: 50 Ohms
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Supplier: Skyworks Solutions, Inc.Description: and includes an InGaP HBT PA with three selectable bias levels to enhance performance at different power levels. Optimizing efficiency of the InGaP HBT PA MMIC and reducing RF loss between integrated components achieves significantly improved talk time. SKY77437 uses Skyworks’ low cost
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Supplier: Skyworks Solutions, Inc.Description: BiFET PA MMIC, reducing RF loss between the integrated components andwithin the Duplexer itself, and improving the match between the PA and the Duplexer, thisFEM achieves low current at maximum output power that significantly reduces the powerdissipated in the LTE-enabled handsets or data cards. Primary
- Form Factor / Package: Surface Mount Technology (SMT)
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Supplier: Skyworks Solutions, Inc.Description: analog pad (VCONT) to improve efficiency for the low RF power range operation. GaAs MMIC contains all active RF circuitry including input and interstage matching circuits; output match into a 50-ohm load is realized off-chip within the module package. Skyworks' GaAs (HBT) process provides for all
- Amplifier Type: Power Amplifier
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Supplier: Digi-Key CorporationDescription: IC MMIC AMP 20-QFN
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- RoHS Compliant: Yes
- MMIC Technology Required: Yes
- Package Type: Surface Mount Technology (SMT)
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Supplier: Digi-Key CorporationDescription: IC MMIC SWITCH SPDT 6-TSON
- Actuator Type: SPDT
- Package Type: Surface Mount, Other
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Supplier: Digi-Key CorporationDescription: IC MMIC DWN-CNVRTR SOT-363
- Package Type: Surface Mount Technology (SMT)
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Supplier: Avnet ExpressDescription: LOW COST MMIC MIXER 5PIN SOT-25
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Supplier: California Eastern Laboratories - CELDescription: The uPG2413T6M is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This device can operate frequencies from 0.5 to 3.0 GHz, with low insertion loss. This device is housed in a 12-pin plastic TSQFN (Thin Small Quad Flat Non-leaded) (T6M) package and is suitable
- Impedance: 50 ohms
- Max Input Channels: 1, 2
- Max Output Channels: 1, 2
- Actuator Type: Other
Featured Products for MMIC RF Top
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TriQuint, the world's #1 commercial GaAs Foundry, offers a wide range of innovative process technologies to help customers build the next generation of wireless communications applications. With a full range of services - from pre-engagement training and robust design tools; to on-wafer test services and failure analysis, TriQuint is your best bet for a long-term foundry services partnership. Check out our latest process offerings for developing cost-effective mmWave applications and capitalize... (read more)Browse Semiconductor Foundry Services Datasheets for TriQuint Semiconductor, Inc. -
Avago Technologies' MGA-13316 is a two stage, easy-to-use GaAs MMIC Low Noise Amplifier (LNA). The MGA-13316 LNA has low noise with good input return loss and high linearity achieved through the use of Avago Technologies' proprietary 0.25um GaAs Enhancement-mode pHEMT process. View Data Sheet (PDF). CLICK HERE TO REQUEST A FREE SAMPLE. CLICK HERE FOR QUOTATION (read more)Browse RF Amplifiers Datasheets for Avago Technologies
Conduct Research Top
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Mixed Mode Silicon-on-Insulator MMIC Technology For Digitally Controlled RF/Microwave Systems (.pdf)
for 2.4/5.8GHz are described along with related system-on-a-chip implementations. Plymouth, MN 55441, USA Mixed Mode Silicon-on-Insulator MMIC Technology For. Digitally Controlled RF/Microwave Systems. Jeff Kriz. Honeywell, Solid State Electronic Center, 2C22. 12001 Hwy 55. Plymouth, MN 55441, USA
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TA028: GaAs MMIC Processes Enable Multi-Function Integration, Increasing Reliability While Reducing Chip Size and Cost
After some 20+ years of DoD technology development, the commercial wireless market has become the driving force for the GaAs MMIC industry. As the very low-cost requirements of the wireless industry have conflicted with the high-performance process needs and longer time-horizon of the defense
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M515: Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
The achievable isolation of a GaAs MMIC switch is a function of how low an inductance one can achieve between the ground pad of the MMIC and the ground plane within a particular circuit. The lower the inductance, of course, the higher the isolation that can be achieved. For example, the curves
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M542: Electrical Characterizations of Packages for use with GaAs MMIC Amplifiers
A test methodology will be presented which combines the advantage of on-wafer RF probing with a TRL calibration to create a completely de-embeddable, novel "test fixture" capable of electrically characterizing most any style package or device. This scheme has been used to characterize many
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M537: GaAs MMIC Based Control Components with Integral Drivers
This application note describes the fundamental operation and features of a new series of control components. These switches comprise a family of devices that use GaAs FET MMIC technology for the RF circuitry and incorporate application specific integrated circuit (ASIC) technology to realize
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TA031: GaAs X-Band Multifunction Control MMIC Using the MSAG(R) Process
error less than of 2o and RMS attenuator error less than 0.3 dB. On-wafer RF screening of this 24 mm2, complex multifunction digital and microwave control MMIC resulted in an RF spec yield of over 90%...making this chip extremely desirable for low-cost solid state phased array radar T/R module
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TA029: Generic 2.5-W 60% Bandwidth C-Band MMIC Amplifier
This paper reports the design and test data of a generic 2.5-W two-stage C-band MMIC power amplifier developed using the MSAG(R) MESFET process. We measured typically a minimum PAE of 45% and 2.5W CW output power over the 4.5 to 7.4 GHz for the MMIC chip packaged on CuW carrier. The output power
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TA038: High Performance Wideband Amplifiers For Radar And Satcomm Applications
A series of high performance wideband MMIC low noise, gain block and driver amplifiers has been developed for applications in next-generation radar and satcom equipment. These new amplifiers operate in the 2 to 20 GHz frequency range and feature a single-supply, low noise and distributed gain
Engineering Web Search: MMIC RF Top
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RF MMIC - Infineon Technologies
RF MMIC ???? RF Transistors ????ESD?? > RF MMIC RF MMIC ??????? CATV / Broadband Amplifier
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RF MMIC - Infineon Technologies
RF RF MMIC RF Switches RF Transistors > RF > RF MMIC RF MMIC Low Noise and Driver Amplifiers for Wireless Applications
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RF Micro Devices :: RF Solutions & Wireless...
High power RF, high-frequency point-to-point RF chipsets, high-reliability signal sources, and modules.
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RF Globalnet: Digital Marketplace for the wireless, microwave,...
Murata Announces Definitive Agreement To Acquire RF Monolithics, ...
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1027 SiGeC BGU7003_v2.indd
NXP wideband LNA MMIC BGU7003 in SiGe:C process High-quality reception at high RF frequencies Manufactured in NXP's latest SiGe:C process, this
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RF :: NXP Semiconductors
RF Sensors Thyristors TV and STB front ends High Performance RF Buy products Ordering and availability Read more
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