MOSFET Fundamental

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• Determining MOSFET Driver Needs for Motor Drive Applications
  Electronic motor control for various types of motors represents one of the main applications for MOSFET drivers today. This application note discusses some of the fundamental concepts needed to obtain the proper MOSFET driver for your application. The bridging element between the motor and MOSFET...
• Using NEC Optocouplers as Gate Drivers in IGBT and Power MOSFET Applications
  Reviews the characteristics and technical requirements of using an NEC high speed optocoupler to gate drive an IGBT or Power MOSFET. ./55a16466-12e8-4c5b-8e73-1d56f61e48d0 ApplicAtion note. AN3007. Using NEC Optocouplers as Gate Drivers. in IGBT and Power MOSFET Applications. by Van N. Tran...
• Switching Power Supply Design
  a possibility of. 20 to 40 W/in3. Higher switching frequencies, made possible by power MOSFET. transistors, newer topologies, and integrated-circuit pulse-width-modulating. chips, which pack more control and supervisory features in. a smaller volume, have contributed to making present-day power. supplies...
• Introduction to Analog Electronics
  of trigonometry. The main topics in this book provide an introduction to the most important semiconductor devices: how they are built, how they operate, and how they are used in larger electronic modules. It is important to understand how little the fundamental principles of electronics have changed over time...
• Design Considerations in Using the Inverter Gate Driver Optocouplers for Variable Speed Motor Drives - White Paper (.pdf)
  Inverter Gate Driver optocouplers are ideally suited for IGBT and MOSFET applications for variable speed motor drives. Their high output peak currents coupled with high voltage safety standards certified galvanic insulation, very high common mode noise rejection isolation, solid state device level...
• Powering Communications in Harsh Environments
  The use of power supplies in harsh, remote environments brings with it many fundamental design issues that must be fully understood if long-term reliability is to be attained. For designers of communications equipment downtime is not an option. Both revenues and safety can be compromised under...
• MICRO:Outlook 2000 (Nov '99)
  in the foreseeable future. Therefore, it is going to become increasingly important to understand any defect formation inside trenches, and high-aspect-ratio inspection, called HARI, is the area of concern here. Head, ULSI Technology Research Dept., We're pushing up against fundamental physical limits now in scaling...
• Solving Thermal Measurement Problems Using The TC72 And TC77 Digital Silicon Temperature Sensors
  Technology Inc. DS00871A-page 1. AN871. A bipolar diode is used for the temperature measure-. threshold voltage, which is process-dependent. Since it. ment because its electrical characteristics are better. is difficult to obtain an accurate sensor with a MOSFET. than a MOSFET diode. The current...
• Solving Thermal Measurement Problems Using The TC72 And TC77 Digital Silicon Temperature Sensors
  because its electrical characteristics are better. is difficult to obtain an accurate sensor with a MOSFET. than a MOSFET diode. The current and voltage. diode, most silicon sensors use the substrate bipolar. relationship of a MOSFET diode is dependent on the. diode as the temperature-sensing element...
• MICRO: The Hot Button
  experiments. In short, strain modifies the electronic band structure of silicon and can improve fundamental carrier transport properties. Such enhancement can translate to increased current drivability independent of geometric scaling. So the strain benefit in MOSFET is largely additive to the impact...

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